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IGBT Driver Module Enables High Power Systems Design with Reduced Design Time and Cost

IGBT Driver Module Enables High Power Systems Design with Reduced Design Time and Cost

IXYS Corporation introduces new IXIDM1403 driver module to serve the market with IGBT driver parts that enable a short design cycle and the lowest…


Silicon Nitride Substrates for Improved Performance in Power Electronics

Silicon Nitride Substrates for Improved Performance in Power Electronics

This article discusses the comparison between silicon nitride substrates and other materials and offers insights of Silicon Nitride Substrates.


Oscilloscopes for Measurements on Advanced Power Semiconductors

Oscilloscopes for Measurements on Advanced Power Semiconductors

This articles discusses Isolated Channel Oscilloscopes and how it is an excellent solution for test and measurements.


Designing an Inverting Buck-boost Converter with Magnetic Integrated Intelligent IC Modules

Designing an Inverting Buck-boost Converter with Magnetic Integrated Intelligent IC Modules

eGaN® Technology is Coming to Cars

eGaN® Technology is Coming to Cars

This article discusses Gallium Nitride Power Devices for Automotive Applications.


Enhanced Trench 3300V TSPT+ IGBT Module Brings Highest Current Density and Robustness

Enhanced Trench 3300V TSPT+ IGBT Module Brings Highest Current Density and Robustness

This article discusses the Enhanced Trench cell or TSPT+ technology and its features and advantages.


Intermediate Voltage to Increase Power Conversion Efficiency

Intermediate Voltage to Increase Power Conversion Efficiency

There are various solutions for applications that need a high input voltage to a very low output voltage conversion.  One instance is the…


99% PFC Efficiency – with Silicon at Low Cost!

99% PFC Efficiency – with Silicon at Low Cost!

How to Ensure Correct RMS Measurements

How to Ensure Correct RMS Measurements

This article features Dr.- Ing. Seibt about the correct RMS measurements that also describes many obstacles and pitfalls on the way to correct RMS…


Smart Handling with Surge Current in PFC Using A Silicon Carbide Schottky Diode

Smart Handling with Surge Current in PFC Using A Silicon Carbide Schottky Diode

This article highlights Infineon CoolSiC™ G6 diode as the new sixth generation of SiC Schottky diodes that reduced conduction losses and surge…


Dealing with CommonMode Voltage Influence

Dealing with CommonMode Voltage Influence

The extreme signal rise-time made possible by wide-bandgap semiconductors create common mode voltages at the switching frequency and above. Without…


Clean Power for Office Towers

Clean Power for Office Towers

This article features EPCOS AG product PQSine S series designed for 3-phase grids with or without neutral conductors and enables harmonics to be…


Practical Solutions Design with GaN Power Transistors

Practical Solutions Design with GaN Power Transistors

This article discusses the advantages of Gallium Nitride over Silicon Carbide in terms of performance and application.


Negative Regulator LT3091 Expands Family of Current-Reference Linear Regulators

Negative Regulator LT3091 Expands Family of Current-Reference Linear Regulators

This article highlights Analog Devices Incorporated LT3081 linear regulator with LT3091 as negative counterpart, and LT8582 dual-channel PWM DC/DC…


Input Filter with Multilayer Power Suppression Bead Handles Peak Transients

Input Filter with Multilayer Power Suppression Bead Handles Peak Transients

A SiC MOSFET for Mainstream Adoption

A SiC MOSFET for Mainstream Adoption

This article highlights Infineon CoolSiC™ semiconductor solutions with an implementation of a 1200 V CoolSiC™ MOSFET in three-phase Si based…


The State of Intelligent SiC MOSFET Gate Drivers

The State of Intelligent SiC MOSFET Gate Drivers

This article talks about the major improvements on Augmented Switching which resulted to significant loss reduction on overshoot voltage.


Dimming Control using a PWM Signal

Dimming Control using a PWM Signal

SiC and GaN Systems Design Engineers no Longer “flying blind”

SiC and GaN Systems Design Engineers no Longer “flying blind”

This article highlights Tektronix IsoVu Measurement System for complete galvanic isolation from DUT and uses an electro-optic sensor to convert…


Wide Band Gap is No Mystery

Wide Band Gap is No Mystery

This article highlights Siemens AG GaN power semiconductors technology in the power electronics system design that work at higher switching…