The new BiCMOS device contains two operational amplifiers in a single package and operates with 4-36 V voltage sources.
The new BiCMOS device contains two operational amplifiers in a single package and operates with 4-36 V voltage sources.
Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon…
Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon carbide (SiC) are now…
Aimed at industrial applications, the new device from Alpha and Omega Semiconductor delivers output voltages of up to 5.5 V.
Aimed at industrial applications, the new device from Alpha and Omega Semiconductor delivers output voltages of up to 5.5 V.
The industrial and consumer market is requiring increased power density for DC/DC converters that have high step-down…
The industrial and consumer market is requiring increased power density for DC/DC converters that have high step-down ratios and use high…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
Infineon, Power Integrations and Microchip have each introduced solutions to ease brushless DC motor (BLDC) control this month.
Infineon, Power Integrations and Microchip have each introduced solutions to ease brushless DC motor (BLDC) control this month.
The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost…
The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost efficiency in USB-PD 3.1 adapters.
Aimed at 12 V automotive applications, the tiny LDO (low-dropout) regulators are AEC-Q100 compliant, feature low magnetic…
Aimed at 12 V automotive applications, the tiny LDO (low-dropout) regulators are AEC-Q100 compliant, feature low magnetic field radiation, and…
EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is…
EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is aimed at terrestrial…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…
The new surface-mounted, AEC-Q200 qualified hybrid devices are aluminum electrolytic, and feature high capacitances in a…
The new surface-mounted, AEC-Q200 qualified hybrid devices are aluminum electrolytic, and feature high capacitances in a smaller PCB footprint.
Housed in a new high-current, thermally-efficient package, the unit sports a gate charge of 117 nC and a typical RDS(ON)…
Housed in a new high-current, thermally-efficient package, the unit sports a gate charge of 117 nC and a typical RDS(ON) of just 0.54 mΩ at a…
The fresh additions consist of 45, 60, 100, and 200–V rectifiers, available in both automotive-qualified and standard…
The fresh additions consist of 45, 60, 100, and 200–V rectifiers, available in both automotive-qualified and standard versions, all of which are…
ST’s STPOWER MDmesh M9 and DM9 series feature N-channel super-junction multi-drain silicon power MOSFETs that will…
ST’s STPOWER MDmesh M9 and DM9 series feature N-channel super-junction multi-drain silicon power MOSFETs that will offer what ST says are the…
The new N-channel power MOSFET, housed in its TO-leadless (TOLL) package, requires 30% less board space than devices…
The new N-channel power MOSFET, housed in its TO-leadless (TOLL) package, requires 30% less board space than devices supplied in standard…
The six FETs, members of the fresh UF4C/SC series, feature industry-leading marks for on-resistance, claims Qorvo…
The six FETs, members of the fresh UF4C/SC series, feature industry-leading marks for on-resistance, claims Qorvo (formerly UnitedSic), and target…
The fresh IGBT/SiC gate-driver family, SCALE EV, is purposed to drive the high-powered automotive and traction inverters…
The fresh IGBT/SiC gate-driver family, SCALE EV, is purposed to drive the high-powered automotive and traction inverters deployed in EVs,…
The fresh diodes “set new benchmarks” for current density in their class, the company says.
The fresh diodes “set new benchmarks” for current density in their class, the company says.
The seven 600 V members constituting the new R60xxVNx series deliver their industry-leading reverse recovery times (trr),…
The seven 600 V members constituting the new R60xxVNx series deliver their industry-leading reverse recovery times (trr), ROHM says, via faster…
Able to operate at temperatures of up to 150 ℃, the new units are supplied in 1210 inch size (3.2 × 2.5 mm) metal cores.
Able to operate at temperatures of up to 150 ℃, the new units are supplied in 1210 inch size (3.2 × 2.5 mm) metal cores.
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