In this article, we take a system-level look at how thermal runaway begins, propagates across multi-module converters, and how engineers can model,…
In this article, we take a system-level look at how thermal runaway begins, propagates across multi-module converters, and how engineers can model,…
Surface-mount packaging for SiC MOSFETs boosts power density, reduces parasitics, and improves thermal performance…
Surface-mount packaging for SiC MOSFETs boosts power density, reduces parasitics, and improves thermal performance compared to legacy packages,…
CES, PowerGen, APEC, and DTECH will spotlight solutions for data centers, load growth, and electrification.
CES, PowerGen, APEC, and DTECH will spotlight solutions for data centers, load growth, and electrification.
Do you remember when supercomputers were described by their processing power? That was so 2024. Today, we talk about the…
Do you remember when supercomputers were described by their processing power? That was so 2024. Today, we talk about the power for processing.…
Learn how research with 1200 V SiC MOSFETs can help designers select the optimal SiC devices for their high-frequency…
Learn how research with 1200 V SiC MOSFETs can help designers select the optimal SiC devices for their high-frequency softswitching applications.
The top-side-cooled MOSFETs combine silicon carbide performance with improved thermal paths for electric vehicles, energy…
The top-side-cooled MOSFETs combine silicon carbide performance with improved thermal paths for electric vehicles, energy infrastructure, and data…
What is the reverse recovery behavior of SiC-MPS diodes in scenarios that challenge their thermal and dynamic robustness?…
What is the reverse recovery behavior of SiC-MPS diodes in scenarios that challenge their thermal and dynamic robustness? This article provides a…
The SCT40xxDLL family targets high-density power systems with improved thermal performance and reduced height.
The SCT40xxDLL family targets high-density power systems with improved thermal performance and reduced height.
The ultra-high-voltage SiC devices are now sampling in power module, discrete, and KGD formats.
The ultra-high-voltage SiC devices are now sampling in power module, discrete, and KGD formats.
Acquisitions, partnerships, and funding are impacting Posco, Factorial, Horizon Motor, Chery Automotive, Infineon,…
Acquisitions, partnerships, and funding are impacting Posco, Factorial, Horizon Motor, Chery Automotive, Infineon, Electreon, EnergyHub, Resideo…
The Gen-4 modules aim to increase current capability and extend e-mobility inverter lifetime.
The Gen-4 modules aim to increase current capability and extend e-mobility inverter lifetime.
Learn how two new Mitsubishi SLIMDIP IPMs address the growing need for high-efficiency power semiconductor devices in…
Learn how two new Mitsubishi SLIMDIP IPMs address the growing need for high-efficiency power semiconductor devices in consumer applications.
This article explores the benefits of SiC devices in selected use cases, including HVAC systems, DC fast charging…
This article explores the benefits of SiC devices in selected use cases, including HVAC systems, DC fast charging infrastructure, and solar and…
Sungrow, Easymetering, Qualcomm, Infineon, SolarEdge, ABB, VoltaGrid, and Southwest Power Pool have new projects in the works.
Sungrow, Easymetering, Qualcomm, Infineon, SolarEdge, ABB, VoltaGrid, and Southwest Power Pool have new projects in the works.
The driver integrates adjustable negative bias and reduces external components in automotive power systems.
The driver integrates adjustable negative bias and reduces external components in automotive power systems.
Nexperia, Toshiba, and Infineon have designed MOSFETs that offer different strategies in advancing high-power design.
Nexperia, Toshiba, and Infineon have designed MOSFETs that offer different strategies in advancing high-power design.
The new single-channel driver uses capacitive isolation to tighten control of Si/SiC MOSFETs and IGBTs in noisy power stages.
The new single-channel driver uses capacitive isolation to tighten control of Si/SiC MOSFETs and IGBTs in noisy power stages.
The design features wide bandgap semiconductors in a full-bridge LLC with planar magnetics.
The design features wide bandgap semiconductors in a full-bridge LLC with planar magnetics.
Rohm’s DOT-247 SiC module combines two devices in one package, raising power density and cutting board size for…
Rohm’s DOT-247 SiC module combines two devices in one package, raising power density and cutting board size for inverters, UPS, and EV systems.
National laboratories have discovered solutions for solid-state batteries, smart power modules, and grid cybersecurity.
National laboratories have discovered solutions for solid-state batteries, smart power modules, and grid cybersecurity.
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