Infineon, Toshiba, and Rohm’s product releases and proven applications indicate continued growth in the high-power MOSFET market.
Infineon, Toshiba, and Rohm’s product releases and proven applications indicate continued growth in the high-power MOSFET market.
The CoolSiC G2 MOSFET variants expand cooling options and compact form factors to medium-power SMPS designs.
The CoolSiC G2 MOSFET variants expand cooling options and compact form factors to medium-power SMPS designs.
Learn how Mitsubishi’s in-house designed & developed efficient semiconductor bare-dies (SiC MOSFET & Si RC-IGBT) and…
Learn how Mitsubishi’s in-house designed & developed efficient semiconductor bare-dies (SiC MOSFET & Si RC-IGBT) and compact…
Navitas, Toshiba, Porsche, ChargePoint, Richardson Electronics, and Landis+Gyr have made notable shifts in leaders,…
Navitas, Toshiba, Porsche, ChargePoint, Richardson Electronics, and Landis+Gyr have made notable shifts in leaders, strategies, partners, and…
The expanded series offers higher working voltages to 1000 V in smaller form factors.
The expanded series offers higher working voltages to 1000 V in smaller form factors.
The 1200 V CoolSiC G2 MOSFETs deliver higher power density, lower losses, and improved thermal performance for industrial systems.
The 1200 V CoolSiC G2 MOSFETs deliver higher power density, lower losses, and improved thermal performance for industrial systems.
Learn about Mitsubishi’s XB-Series HV-IGBT modules. They offer lower switching losses and enhanced reliability through…
Learn about Mitsubishi’s XB-Series HV-IGBT modules. They offer lower switching losses and enhanced reliability through 7th-gen Si IGBT and RFC…
Learn how SiC inverter solutions offer a modular, functionally safe platform with certified components, accelerating…
Learn how SiC inverter solutions offer a modular, functionally safe platform with certified components, accelerating development and compliance…
The embedding of semiconductor dies, particularly GaN and SiC MOSFETs, into PCB structures provides multiple system-level…
The embedding of semiconductor dies, particularly GaN and SiC MOSFETs, into PCB structures provides multiple system-level benefits. Learn how this…
Joint projects, acquisitions, and new leadership dominated recent business strategies in power grids, electric vehicles,…
Joint projects, acquisitions, and new leadership dominated recent business strategies in power grids, electric vehicles, SiC, and semiconductors.
SiC trench gate MOSFETs deliver superior performance in terms of both switching and conduction losses, but careful…
SiC trench gate MOSFETs deliver superior performance in terms of both switching and conduction losses, but careful attention must be paid to the…
Littelfuse, Nexperia, and Vishay have released diode products that provide designers with upgraded features.
Littelfuse, Nexperia, and Vishay have released diode products that provide designers with upgraded features.
The new SiC-LV100 SiC-MOSFET module features an optimized structure that tackles the challenges of high current density…
The new SiC-LV100 SiC-MOSFET module features an optimized structure that tackles the challenges of high current density and high-speed switching.
The FLXPro Series offers a digitally configurable AC-DC power supply with high power density and modular outputs.
The FLXPro Series offers a digitally configurable AC-DC power supply with high power density and modular outputs.
Toshiba’s new device structures aim to boost efficiency and reliability in high-temperature power conversion systems.
Toshiba’s new device structures aim to boost efficiency and reliability in high-temperature power conversion systems.
The companies will develop an entirely novel power architecture for future AI data centers.
The companies will develop an entirely novel power architecture for future AI data centers.
The MOSFETs feature numerous structural and material innovations in a DFN 8x8 package.
The MOSFETs feature numerous structural and material innovations in a DFN 8x8 package.
Silicon Carbide (SiC) has a 3x bandgap compared to silicon. Learn how unipolar devices like MOSETs in the several kV…
Silicon Carbide (SiC) has a 3x bandgap compared to silicon. Learn how unipolar devices like MOSETs in the several kV range are possible with SiC.
The company has launched five reference designs with its InnoSwitch3-AQ flyback ICs, targeting inverter power, battery…
The company has launched five reference designs with its InnoSwitch3-AQ flyback ICs, targeting inverter power, battery replacement, and emergency…
The latest devices from Microchip, Rohm, and Semi-Q offer enhanced radiation protection, increased operation range, lower…
The latest devices from Microchip, Rohm, and Semi-Q offer enhanced radiation protection, increased operation range, lower conduction losses, and…
Facebook
Google
GitHub
Linkedin