Wise Integration’s WiseWare 1.1 targets compact, high-efficiency AC-DC converters with integrated ZVS control and broad GaN compatibility.
Wise Integration’s WiseWare 1.1 targets compact, high-efficiency AC-DC converters with integrated ZVS control and broad GaN compatibility.
The FLXPro Series offers a digitally configurable AC-DC power supply with high power density and modular outputs.
The FLXPro Series offers a digitally configurable AC-DC power supply with high power density and modular outputs.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
EPC9196 brings high-speed, medium-voltage BLDC drive capability to compact platforms.
EPC9196 brings high-speed, medium-voltage BLDC drive capability to compact platforms.
STMicroelectronics’ STDRIVEG610 and STDRIVEG611 deliver optimized control for GaN-based power and motor systems.
STMicroelectronics’ STDRIVEG610 and STDRIVEG611 deliver optimized control for GaN-based power and motor systems.
The new device keeps the high-frequency switching benefits of GaN while addressing the historical lack of a true reverse…
The new device keeps the high-frequency switching benefits of GaN while addressing the historical lack of a true reverse body diode.
Navitas and Great Wall Power have launched a 2.5kW GaN-based DC-DC converter with record power density and efficiency,…
Navitas and Great Wall Power have launched a 2.5kW GaN-based DC-DC converter with record power density and efficiency, targeting AI data centers…
New components from GAIA, Infineon, Metis, ROHM, and TDK focus on improving power density, system safety, and integration…
New components from GAIA, Infineon, Metis, ROHM, and TDK focus on improving power density, system safety, and integration across energy,…
With options ranging from 22 V to 200 V, the radiation-hardened gate drivers can bolster power system efficiency for any…
With options ranging from 22 V to 200 V, the radiation-hardened gate drivers can bolster power system efficiency for any space mission.
The MCU family comes in Entry and Main Line products, giving designers a scalable range of performance and memory options.
The MCU family comes in Entry and Main Line products, giving designers a scalable range of performance and memory options.
Cambridge GaN Devices and Qorvo integrate high-performance microcontrollers with ICeGaN ICs to boost energy efficiency.
Cambridge GaN Devices and Qorvo integrate high-performance microcontrollers with ICeGaN ICs to boost energy efficiency.
Infineon, Toshiba, Nexperia, and Navitas have released FETs offering higher integration levels, smaller form factors, …
Infineon, Toshiba, Nexperia, and Navitas have released FETs offering higher integration levels, smaller form factors, and more power density.
Boston Semi Equipment’s Zeus gravity feed test handler doubles the platform’s high-voltage testing capability to an…
Boston Semi Equipment’s Zeus gravity feed test handler doubles the platform’s high-voltage testing capability to an industry-leading 24 kV peak…
Recent developments in DC-DC converters focus on improving power density, thermal management, and efficiency.
Recent developments in DC-DC converters focus on improving power density, thermal management, and efficiency.
The latest SiC and GaN devices offer superior performance for various applications, paving the way for the next wave of…
The latest SiC and GaN devices offer superior performance for various applications, paving the way for the next wave of technological advancements.
The series of power supply units, ranging from 3 kW to 12 kW, focuses on efficiency with the goal of decarbonizing AI…
The series of power supply units, ranging from 3 kW to 12 kW, focuses on efficiency with the goal of decarbonizing AI server racks.
TI showcased what it calls the industry's first GaN IPM for compact, energy-efficient motors at PCIM 2024 in Germany.
TI showcased what it calls the industry's first GaN IPM for compact, energy-efficient motors at PCIM 2024 in Germany.
Teledyne’s GaN load switch is suitable for critical high-power applications requiring speed and efficiency.
Teledyne’s GaN load switch is suitable for critical high-power applications requiring speed and efficiency.
ROHM’s 100 V Schottky Barrier Diode uses a trench MOS structure to lower reverse recovery times, while Vishay and SemiQ…
ROHM’s 100 V Schottky Barrier Diode uses a trench MOS structure to lower reverse recovery times, while Vishay and SemiQ release IGBT and silicon…
Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the…
Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the solution size for 48 V and…
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