Magnachip’s Latest IGBT and MOSFET Innovations

In solar energy, the push for more efficient and reliable inverters is fueling innovation in IGBT technology. Simultaneously, the smartphone market is evolving by integrating advanced artificial intelligence capabilities, necessitating complex power management solutions. Such trends challenge semiconductor manufacturers to develop components that can handle higher voltages, offer improved thermal management and enhance efficiency. 

Magnachip has made significant strides with two new products targeting the solar energy and smartphone markets.

IGBTs for solar inverters. Image used courtesy of Magnachip

Solar Powerhouse

An IGBT is a semiconductor that combines the fast-switching capabilities of a MOSFET with the high current capability of a bipolar junction transistor (BJT). IGBTs are widely used in power electronics for applications like motor drives, inverters, and power supplies, offering efficient control of large electrical loads.

The 1200 V 75 A IGBT is designed specifically for solar inverters. Model MBQA75T120RFS features a TO-247PLUS package with a wide heat spreader to improve heat dissipation compared to the traditional TO-247 package. A heat spreader disperses heat from a semiconductor over a larger area, effectively reducing hot spots and enhancing thermal management to improve component performance and reliability. Additionally, the package improves design power efficiency by offering a 14% reduction in conduction loss over its predecessor.

Magnachip’s new offerings. Image used courtesy of Magnachip

The device also incorporates a fast recovery anti-parallel diode, which quickly removes residual current to reduce switching losses and enable a maximum operating junction temperature of 175°C. According to Magnachip, the IGBT’s performance is sufficient to replace two 40 A IGBTs with a single device.

MOSFETs for AI Smartphones

Adding to their momentum, Magnachip released its 8th-generation MXT LV MOSFET, specifically designed for smartphone battery protection circuits.  

The major architectural advancement of the 8th Generation MXT LV MOSFET is the introduction of Super-Short Channel FET II (SSCFET II) technology. This technology effectively reduces the channel length, directly impacting the MOSFET’s on-resistance to significantly improve efficiency and decrease thermal generation. In this iteration, the on-resistance has been reduced by approximately 22% compared to the previous generation. 

Technical specifications of MDWC12D024PERH. Image courtesy of Magnachip

According to Magnachip, this reduction in resistance also contributes to shorter smartphone charging times and a significant 12% decrease in the internal temperature of smartphones during fast charging.

Future Prospects

Moving toward more sophisticated AI-driven devices and renewable energy solutions will only intensify the demand for efficient power handling. However, the race for energy efficiency is about developing better components and reimagining how we interact with and utilize power in our increasingly connected world. With two new advanced components reaching the market, Magnachip hopes to make strides toward achieving this more sustainable future.