Latest Power FETs New Products

Toshiba’s SOP Advance(E) package yields lower losses and better thermal performance.

Toshiba’s SOP Advance(E) package yields lower losses and better thermal performance.

Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.

Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.

STMicroelectronics’ STDRIVEG610 and STDRIVEG611 deliver optimized control for GaN-based power and motor systems.

STMicroelectronics’ STDRIVEG610 and STDRIVEG611 deliver optimized control for GaN-based power and motor systems.

The MOSFETs feature numerous structural and material innovations in a DFN 8x8 package.

The MOSFETs feature numerous structural and material innovations in a DFN 8x8 package.

The latest devices from Microchip, Rohm, and Semi-Q offer enhanced radiation protection, increased operation range, lower…

The latest devices from Microchip, Rohm, and Semi-Q offer enhanced radiation protection, increased operation range, lower conduction losses, and…

New components from GAIA, Infineon, Metis, ROHM, and TDK focus on improving power density, system safety, and integration…

New components from GAIA, Infineon, Metis, ROHM, and TDK focus on improving power density, system safety, and integration across energy,…

With options ranging from 22 V to 200 V, the radiation-hardened gate drivers can bolster power system efficiency for any…

With options ranging from 22 V to 200 V, the radiation-hardened gate drivers can bolster power system efficiency for any space mission.

TI’s hot-swap eFuse integrates needed components to handle high power demands, save space, and simplify design.

TI’s hot-swap eFuse integrates needed components to handle high power demands, save space, and simplify design.

The high-voltage MOSFETs offer better efficiency, thermal performance, and reliability with a smaller die and lower losses.

The high-voltage MOSFETs offer better efficiency, thermal performance, and reliability with a smaller die and lower losses.

The company's fourth generation of SiC MOSFETs comes with upgrades to reverse recovery transients and lower RDS(on).

The company's fourth generation of SiC MOSFETs comes with upgrades to reverse recovery transients and lower RDS(on).

Thanks to a new process, the two power FETs feature incredibly low on-resistance and high switching efficiency.

Thanks to a new process, the two power FETs feature incredibly low on-resistance and high switching efficiency.

Toshiba, Littelfuse, and Vishay have introduced MOSFET technologies to maximize efficiency without compromising reliability.

Toshiba, Littelfuse, and Vishay have introduced MOSFET technologies to maximize efficiency without compromising reliability.

The MOSFETs are targeted for automotive and industrial power electronics.

The MOSFETs are targeted for automotive and industrial power electronics.

Cambridge GaN Devices and Qorvo integrate high-performance microcontrollers with ICeGaN ICs to boost energy efficiency.

Cambridge GaN Devices and Qorvo integrate high-performance microcontrollers with ICeGaN ICs to boost energy efficiency.

ST designed its newest STPower silicon carbide MOSFETs to improve efficiency, power density, and robustness for EV…

ST designed its newest STPower silicon carbide MOSFETs to improve efficiency, power density, and robustness for EV powertrains and charging circuits.

These advancements aim to reduce the footprint of MOSFETs while increasing power density and efficiency.

These advancements aim to reduce the footprint of MOSFETs while increasing power density and efficiency.

Navitas Semiconductor and Vishay are offering new MOSFETs for automotive and industrial use.

Navitas Semiconductor and Vishay are offering new MOSFETs for automotive and industrial use.

The new power product lineup includes a 1200 V IGBT and a next-gen MOSFET for solar and smartphones, respectively.

The new power product lineup includes a 1200 V IGBT and a next-gen MOSFET for solar and smartphones, respectively.

Infineon, Toshiba, Nexperia, and Navitas have released FETs offering higher integration levels, smaller form factors, …

Infineon, Toshiba, Nexperia, and Navitas have released FETs offering higher integration levels, smaller form factors,  and more power density.