This article highlights Maxim Integrated MAX77655 single-inductor multiple output (SIMO) power management IC (PMIC) that provides the…
November 13, 2020 by Hailey Stewart
Through the partnership between STMicroelectronics (ST) and Sanken Electric, a new family of intelligent power modules (IPMs) to simplify HVAC…
November 10, 2020 by Antonio Anzaldua Jr.
This article highlights EPC 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more efficient, more reliable,…
November 10, 2020 by Hailey Stewart
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active power management, and…
November 09, 2020 by Gary Elinoff
This new generation of 100 V eGaN FETs are aimed at applications in lidar, infotainment, class D audio and 48-VOUT synchronous rectification
October 01, 2020 by Gary Elinoff
Bizen has been verified by physical wafer results and calibration to deliver the same voltage levels, switching speeds and power handling…
September 23, 2020 by Hailey Stewart
EPC introduces new generation 100 V eGaN® FETs that are ideal for 48-VOUT synchronous rectification, class-D audio, infotainment, and lidar.
September 22, 2020 by Hailey Stewart
This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported a typical ON-resistance of…
August 24, 2020 by Gary Elinoff
Transphorm announced its second 900 V GaN FET is now in production, the TP90H050WS.
August 19, 2020 by Hailey Stewart
KEMET releases new tantalum polymer capacitors designed to provide the highest capacitance/voltage (CV) ratings in surface mount device (SMD)…
August 13, 2020 by Hailey Stewart
Power Integrations announced its LinkSwitch-TN2, a high-reliability, space-saving buck/flyback switcher ICs targeting 400 VDC EV applications
July 04, 2020 by Hailey Stewart
Infineon Technologies launches the CoolSiC™ MOSFETs 1700Vs optimized for flyback topologies compatible with common PWM controllers.
May 29, 2020 by Infineon Technologies
March 28, 2020 by Paul Shepard
X-FAB highlights the availability of new medium-voltage transistors – complementing the company’s leading 180nm BCD-on-SOI technology platform…
February 21, 2020 by X-Fab
February 14, 2020 by Paul Shepard
February 06, 2020 by Paul Shepard
This article highlights Fraunhofer IAF a success in developing a novel type of transistor with extremely high cut-off frequencies, the MOSHEMTs.
January 14, 2020 by Fraunhofer IAF
January 13, 2020 by Paul Shepard
January 08, 2020 by Paul Shepard
December 20, 2019 by Paul Shepard
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