Latest Power FETs New Products

Thanks to a new process, the two power FETs feature incredibly low on-resistance and high switching efficiency.

Thanks to a new process, the two power FETs feature incredibly low on-resistance and high switching efficiency.

Toshiba, Littelfuse, and Vishay have introduced MOSFET technologies to maximize efficiency without compromising reliability.

Toshiba, Littelfuse, and Vishay have introduced MOSFET technologies to maximize efficiency without compromising reliability.

The MOSFETs are targeted for automotive and industrial power electronics.

The MOSFETs are targeted for automotive and industrial power electronics.

Cambridge GaN Devices and Qorvo integrate high-performance microcontrollers with ICeGaN ICs to boost energy efficiency.

Cambridge GaN Devices and Qorvo integrate high-performance microcontrollers with ICeGaN ICs to boost energy efficiency.

ST designed its newest STPower silicon carbide MOSFETs to improve efficiency, power density, and robustness for EV…

ST designed its newest STPower silicon carbide MOSFETs to improve efficiency, power density, and robustness for EV powertrains and charging circuits.

These advancements aim to reduce the footprint of MOSFETs while increasing power density and efficiency.

These advancements aim to reduce the footprint of MOSFETs while increasing power density and efficiency.

Navitas Semiconductor and Vishay are offering new MOSFETs for automotive and industrial use.

Navitas Semiconductor and Vishay are offering new MOSFETs for automotive and industrial use.

The new power product lineup includes a 1200 V IGBT and a next-gen MOSFET for solar and smartphones, respectively.

The new power product lineup includes a 1200 V IGBT and a next-gen MOSFET for solar and smartphones, respectively.

Infineon, Toshiba, Nexperia, and Navitas have released FETs offering higher integration levels, smaller form factors, …

Infineon, Toshiba, Nexperia, and Navitas have released FETs offering higher integration levels, smaller form factors,  and more power density.

With an eye on efficiency, thermal resistance, and size, major power players have added new MOSFETs to their portfolios.

With an eye on efficiency, thermal resistance, and size, major power players have added new MOSFETs to their portfolios.

These e-fuse offerings from Toshiba, Nexperia, and STMicroelectronics serve manifold applications: laptops, vehicles,…

These e-fuse offerings from Toshiba, Nexperia, and STMicroelectronics serve manifold applications: laptops, vehicles, data centers, and beyond.

The ready-to-use circular board reference design puts 750 W drive capability into a circular PCB just 50 mm (1.9”) in diameter.

The ready-to-use circular board reference design puts 750 W drive capability into a circular PCB just 50 mm (1.9”) in diameter.

To meet the mounting power demands in data centers and AI servers, Infineon has revealed MOSFETs that improve efficiency…

To meet the mounting power demands in data centers and AI servers, Infineon has revealed MOSFETs that improve efficiency at lower voltages.

The latest SiC and GaN devices offer superior performance for various applications, paving the way for the next wave of…

The latest SiC and GaN devices offer superior performance for various applications, paving the way for the next wave of technological advancements.

Qorvo's 4 mΩ SiC JFET for solid-state circuit breakers provides significant advantages over traditional mechanical…

Qorvo's 4 mΩ SiC JFET for solid-state circuit breakers provides significant advantages over traditional mechanical breakers. Andy Wilson…

The MSC200LHI features 5 kV high isolation voltage required in high-speed gate driver circuits.

The MSC200LHI features 5 kV high isolation voltage required in high-speed gate driver circuits.

Infineon’s state-of-the-art MOSFETs set new industry standards by offering high performance, increased power density,…

Infineon’s state-of-the-art MOSFETs set new industry standards by offering high performance, increased power density, and enhanced efficiency.

Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the…

Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the solution size for 48 V and…

The five parts are 1,200-V, full-bridge quad MOSFETs with current ratings from 27–102 A and RDS(on) values ranging from…

The five parts are 1,200-V, full-bridge quad MOSFETs with current ratings from 27–102 A and RDS(on) values ranging from 20 to 80 mΩ.