The new units, announced yesterday, feature R25 values of 1 kΩ and 1.5 kΩ, as well as a 5 kΩ value aimed at IGBT and power MOSFET modules in EVs.
The new units, announced yesterday, feature R25 values of 1 kΩ and 1.5 kΩ, as well as a 5 kΩ value aimed at IGBT and power MOSFET modules in EVs.
The new series of devices accommodates up to six 250 W AC/DC cassettes into one 19” rack system.
The new series of devices accommodates up to six 250 W AC/DC cassettes into one 19” rack system.
Separately driving the high-side and low-side FETs of each half-bridge allows users to configure the output channels…
Separately driving the high-side and low-side FETs of each half-bridge allows users to configure the output channels independently, and drive a…
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The SIDACtor series from Littelfuse will provide protection for exposed interfaces in industrial and information…
The SIDACtor series from Littelfuse will provide protection for exposed interfaces in industrial and information communications technology (ICT)…
The surface-mounted devices are available with capacitances of 47 to 10,000 µF and voltage ratings from 6.3 to 100 VDC.
The surface-mounted devices are available with capacitances of 47 to 10,000 µF and voltage ratings from 6.3 to 100 VDC.
The new 1000 W, single output open frame AC/DC converters meet stringent medical safety requirements.
The new 1000 W, single output open frame AC/DC converters meet stringent medical safety requirements.
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard…
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
The new device is optimized for conduction cooling, operating across a baseplate temperature range of -40 to +95 °C…
The new device is optimized for conduction cooling, operating across a baseplate temperature range of -40 to +95 °C without the use of a fan.
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
The regulator features a noise level of only 0.46 µVRMS, with exceptionally high power-supply ripple rejection (PSRR).
The regulator features a noise level of only 0.46 µVRMS, with exceptionally high power-supply ripple rejection (PSRR).
The two new families will serve to enhance energy efficiency, in addition to saving weight and board space.
The two new families will serve to enhance energy efficiency, in addition to saving weight and board space.
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power…
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power factor correction (PFC).
The new fuses are aimed specifically at the harsh automotive environments of modern electric vehicles (EVs), where they…
The new fuses are aimed specifically at the harsh automotive environments of modern electric vehicles (EVs), where they have been designed to…
The new units are designed to lower the total costs associated with today’s new generation of low earth orbit (LEO) satellites.
The new units are designed to lower the total costs associated with today’s new generation of low earth orbit (LEO) satellites.
Taking up a scant 64 mm2 with a height of 0.9 mm in DFN8x8 packages, the new devices are aimed at meeting today’s…
Taking up a scant 64 mm2 with a height of 0.9 mm in DFN8x8 packages, the new devices are aimed at meeting today’s demands for high efficiency and…
The two new series, featuring single isolated outputs and offering efficiencies of up to 91%, join CUI’s established PRQ line.
The two new series, featuring single isolated outputs and offering efficiencies of up to 91%, join CUI’s established PRQ line.
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified…
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified to NASA’s full Level 1…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…