Learn how to model and manage heat in 4-6.5 kV IGBT and SiC modules using coupled electro-thermal simulations for accurate cooling and reliable…
Learn how to model and manage heat in 4-6.5 kV IGBT and SiC modules using coupled electro-thermal simulations for accurate cooling and reliable…
This article will examine various layout strategies for GaN FETs, analyzing how different PCB configurations affect added…
This article will examine various layout strategies for GaN FETs, analyzing how different PCB configurations affect added resistance for each design.
A University of Sydney team has created a 23.3%-efficient, 16 cm2 tandem solar cell with world-first stability metrics.
A University of Sydney team has created a 23.3%-efficient, 16 cm2 tandem solar cell with world-first stability metrics.
The design features wide bandgap semiconductors in a full-bridge LLC with planar magnetics.
The design features wide bandgap semiconductors in a full-bridge LLC with planar magnetics.
Infineon, Toshiba, and Rohm’s product releases and proven applications indicate continued growth in the high-power…
Infineon, Toshiba, and Rohm’s product releases and proven applications indicate continued growth in the high-power MOSFET market.
In this third and last part of the series we delve into the Isolated DC-DC converter that follows the PFC.
In this third and last part of the series we delve into the Isolated DC-DC converter that follows the PFC.
Learn how front-side copper metallization (FSM) is unlocking the full potential of Silicon Carbide (SiC) MOSFETs,…
Learn how front-side copper metallization (FSM) is unlocking the full potential of Silicon Carbide (SiC) MOSFETs, especially as devices shrink in…
SiC trench gate MOSFETs deliver superior performance in terms of both switching and conduction losses, but careful…
SiC trench gate MOSFETs deliver superior performance in terms of both switching and conduction losses, but careful attention must be paid to the…
Wise Integration’s WiseWare 1.1 targets compact, high-efficiency AC-DC converters with integrated ZVS control and broad…
Wise Integration’s WiseWare 1.1 targets compact, high-efficiency AC-DC converters with integrated ZVS control and broad GaN compatibility.
The new SiC-LV100 SiC-MOSFET module features an optimized structure that tackles the challenges of high current density…
The new SiC-LV100 SiC-MOSFET module features an optimized structure that tackles the challenges of high current density and high-speed switching.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
The GaN releases expand Renesas’ ecosystem-driven approach for the wide bandgap semiconductor.
The GaN releases expand Renesas’ ecosystem-driven approach for the wide bandgap semiconductor.
Learn how 100 V GaN devices are serving the needs of 48 V applications in data centers, renewable energy, and motor drives.
Learn how 100 V GaN devices are serving the needs of 48 V applications in data centers, renewable energy, and motor drives.
Silicon Carbide (SiC) has a 3x bandgap compared to silicon. Learn how unipolar devices like MOSETs in the several kV…
Silicon Carbide (SiC) has a 3x bandgap compared to silicon. Learn how unipolar devices like MOSETs in the several kV range are possible with SiC.
In part two of this article series, we dive deeper into the design details of the solution and present experimental…
In part two of this article series, we dive deeper into the design details of the solution and present experimental results for a 240 VAC input to…
Unidirectional switches (UDS) have long served power conversion systems, but they come with inherent limitations. A…
Unidirectional switches (UDS) have long served power conversion systems, but they come with inherent limitations. A bidirectional GaN switch…
This year’s PCIM featured wide bandgap products from Rohde & Schwarz, Wise Integration, and Texas Instruments.
This year’s PCIM featured wide bandgap products from Rohde & Schwarz, Wise Integration, and Texas Instruments.
Infineon, EPC, and Navitas unveiled SiC and GaN technologies for electric vehicles, data centers, robotics, and…
Infineon, EPC, and Navitas unveiled SiC and GaN technologies for electric vehicles, data centers, robotics, and industrial motor drives at PCIM…
The new device keeps the high-frequency switching benefits of GaN while addressing the historical lack of a true reverse…
The new device keeps the high-frequency switching benefits of GaN while addressing the historical lack of a true reverse body diode.
Transistors are the core of power electronics. However, the beneficial properties of wide bandgap devices present…
Transistors are the core of power electronics. However, the beneficial properties of wide bandgap devices present challenges for accurate…
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