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Renesas Unveils 650 V GaN FETs for Power Conversion

Renesas Unveils 650 V GaN FETs for Power Conversion

The GaN releases expand Renesas’ ecosystem-driven approach for the wide bandgap semiconductor.


News Jul 10, 2025 by Jake Hertz
Serving 48V Power Systems With 100V GaN Discretes and Integrated Solutions

Serving 48V Power Systems With 100V GaN Discretes and Integrated Solutions

Learn how 100 V GaN devices are serving the needs of 48 V applications in data centers, renewable energy, and motor drives.


Powering the SiC Revolution with Vertical Integration

Powering the SiC Revolution with Vertical Integration

Silicon Carbide (SiC) has a 3x bandgap compared to silicon. Learn how unipolar devices like MOSETs in the several kV range are possible with SiC.


Using Low-Voltage Devices in High-Voltage Server Power Supplies—Part 2

Using Low-Voltage Devices in High-Voltage Server Power Supplies—Part 2

In part two of this article series, we dive deeper into the design details of the solution and present experimental results for a 240 VAC input to…


Revolutionizing Power Electronics: GaN Bidirectional Switches

Revolutionizing Power Electronics: GaN Bidirectional Switches

Unidirectional switches (UDS) have long served power conversion systems, but they come with inherent limitations. A bidirectional GaN switch…


PCIM 2025: Wide Bandgap Innovations for EVs, Testing, Design

PCIM 2025: Wide Bandgap Innovations for EVs, Testing, Design

This year’s PCIM featured wide bandgap products from Rohde & Schwarz, Wise Integration, and Texas Instruments.


News May 13, 2025 by Luke James
PCIM 2025: SiC and GaN Innovations for Power Electronics

PCIM 2025: SiC and GaN Innovations for Power Electronics

Infineon, EPC, and Navitas unveiled SiC and GaN technologies for electric vehicles, data centers, robotics, and industrial motor drives at PCIM…


News May 12, 2025 by Joshua Tidwell
Infineon First to Integrate Schottky Diode Into Industrial GaN Transistor

Infineon First to Integrate Schottky Diode Into Industrial GaN Transistor

The new device keeps the high-frequency switching benefits of GaN while addressing the historical lack of a true reverse body diode.


new products Apr 30, 2025 by Jake Hertz
Putting Wide-Bandgap Power Transistors to The Test

Putting Wide-Bandgap Power Transistors to The Test

Transistors are the core of power electronics. However, the beneficial properties of wide bandgap devices present challenges for accurate…


1500 V DC-Link Architecture is Essential to Solve the Need for More Power

1500 V DC-Link Architecture is Essential to Solve the Need for More Power

Especially when renewable energies are used to supply the grid the use of power semiconductors becomes mandatory. One of the key questions in these…


Navitas, GigaDevice Join GaN and SiC for High-Power Use

Navitas, GigaDevice Join GaN and SiC for High-Power Use

Navitas Semiconductor and GigaDevice have launched a joint R&D lab to integrate Navitas’ GaNFast power ICs with GigaDevice’s GD32…


News Apr 13, 2025 by Luke James
TI Nods to Smaller, More Efficient Satellites With GaN FET Gate Driver

TI Nods to Smaller, More Efficient Satellites With GaN FET Gate Driver

With options ranging from 22 V to 200 V, the radiation-hardened gate drivers can bolster power system efficiency for any space mission.


new products Apr 05, 2025 by Charles Lee
Fighting Bipolar Degradation With High-Performance SiC Substrates

Fighting Bipolar Degradation With High-Performance SiC Substrates

SiC-engineered substrates offer significant benefits over conventional substrates by leveraging device performance thanks to the use of a highly…


Improving Parameters for SiC Technology

Improving Parameters for SiC Technology

This article examines a new generation of SiC technology, focusing on holistic system efficiency, durability, and system cost.


2 kV SiC Power Modules Transform 1500 V Systems

2 kV SiC Power Modules Transform 1500 V Systems

The newest voltage class of silicon carbide is enabling a shift in circuit topology for 1500 V-class inverters.


Beyond 200 kHz: HIL Testing Solutions for Power Electronics

Beyond 200 kHz: HIL Testing Solutions for Power Electronics

This article provides insights into easy-to-use, real-time-capable models for the FPGA-based testing of an onboard charger.


Enhancing xEV Powertrains With Advanced Trench Tech

Enhancing xEV Powertrains With Advanced Trench Tech

Power electronics are a cornerstone of innovation in automotive, enabling superior performance and efficiency. Add SiC and they become even better.


Using Low-Voltage Devices in High-Voltage Server Power Supplies—Part 1

Using Low-Voltage Devices in High-Voltage Server Power Supplies—Part 1

The increasing power demand in data centers, led by advances in artificial intelligence, is driving the need for converters with higher power…


Navigating the Evolving Patent Landscape in SiC and GaN Technologies

Navigating the Evolving Patent Landscape in SiC and GaN Technologies

Silicon Carbide and Gallium Nitride technologies are significantly reshaping the power electronics industry—from electric vehicles to renewable…


SiC-Based E-Fuses vs. Traditional Fuses: A Modern Comparative Analysis

SiC-Based E-Fuses vs. Traditional Fuses: A Modern Comparative Analysis

Electronic circuit interruption solutions protect the wiring and limit short-circuit let-through current and energy delivered to a faulted load.…