(Performance and Reliability are Expected). Gallium nitride is still regarded as a new technology by many. Although GaN is now widely used in…
(Performance and Reliability are Expected). Gallium nitride is still regarded as a new technology by many. Although GaN is now widely used in…
ST’s STPOWER MDmesh M9 and DM9 series feature N-channel super-junction multi-drain silicon power MOSFETs that will…
ST’s STPOWER MDmesh M9 and DM9 series feature N-channel super-junction multi-drain silicon power MOSFETs that will offer what ST says are the…
The new N-channel power MOSFET, housed in its TO-leadless (TOLL) package, requires 30% less board space than devices…
The new N-channel power MOSFET, housed in its TO-leadless (TOLL) package, requires 30% less board space than devices supplied in standard…
This article analyzes the technological trends of the DC electric vehicle (EV) charger. It introduces the current status…
This article analyzes the technological trends of the DC electric vehicle (EV) charger. It introduces the current status of silicon carbide (SiC)…
The six FETs, members of the fresh UF4C/SC series, feature industry-leading marks for on-resistance, claims Qorvo…
The six FETs, members of the fresh UF4C/SC series, feature industry-leading marks for on-resistance, claims Qorvo (formerly UnitedSic), and target…
The fresh IGBT/SiC gate-driver family, SCALE EV, is purposed to drive the high-powered automotive and traction inverters…
The fresh IGBT/SiC gate-driver family, SCALE EV, is purposed to drive the high-powered automotive and traction inverters deployed in EVs,…
Markets are expected to open up for sensors capable of delivering response times as low as 100ns and unprecedented…
Markets are expected to open up for sensors capable of delivering response times as low as 100ns and unprecedented cut-off frequencies above 1MHz.…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
With Delta’s power supply development know-how and ROHM’s vast experience in power semiconductors, the companies will…
With Delta’s power supply development know-how and ROHM’s vast experience in power semiconductors, the companies will look to develop 600 V…
Touting itself as the world's premier forum for power electronics, intelligent motion, renewable energy, and energy…
Touting itself as the world's premier forum for power electronics, intelligent motion, renewable energy, and energy management, the conference…
The latest ePower™ integrated circuits based on gallium nitride technology by Efficient Power Conversion are…
The latest ePower™ integrated circuits based on gallium nitride technology by Efficient Power Conversion are revolutionizing motor drive…
The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with…
The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with additions to the company’s…
The probe and accompanying Power-Device software, in tandem with the company’s proven 12-bit high definition…
The probe and accompanying Power-Device software, in tandem with the company’s proven 12-bit high definition oscilloscopes, provide sharp…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
Researchers earlier developed an energy storage system that captures sunlight and stores it for up to 18 years. They have…
Researchers earlier developed an energy storage system that captures sunlight and stores it for up to 18 years. They have now succeeded in creating…
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard…
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
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