The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
The two new families will serve to enhance energy efficiency, in addition to saving weight and board space.
The two new families will serve to enhance energy efficiency, in addition to saving weight and board space.
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power…
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power factor correction (PFC).
Taking up a scant 64 mm2 with a height of 0.9 mm in DFN8x8 packages, the new devices are aimed at meeting today’s…
Taking up a scant 64 mm2 with a height of 0.9 mm in DFN8x8 packages, the new devices are aimed at meeting today’s demands for high efficiency and…
Introduced March 2 at the UK’s Future Propulsion Conference 2022 (FPC2022), the inverter delivers 350 kW peak and 250…
Introduced March 2 at the UK’s Future Propulsion Conference 2022 (FPC2022), the inverter delivers 350 kW peak and 250 kW continuous for powering…
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified…
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified to NASA’s full Level 1…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
No single control topology is a good fit for all applications. Designers requiring low electromagnetic interference (EMI)…
No single control topology is a good fit for all applications. Designers requiring low electromagnetic interference (EMI) and fast load-transient…
How integrated GaN technology drives superior performance, simpler design, and reduced cost in 48 V/12 V automotive mild…
How integrated GaN technology drives superior performance, simpler design, and reduced cost in 48 V/12 V automotive mild hybrid applications.
The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended…
The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended range, lower battery…
The technology access agreement (TAA) allows II-VI to gain access to GE’s wide-ranging silicon carbide (SiC) module…
The technology access agreement (TAA) allows II-VI to gain access to GE’s wide-ranging silicon carbide (SiC) module technology and to its teams…
A ‘hack’ is a clever or elegant solution that uses something for a purpose for which it was not originally intended,…
A ‘hack’ is a clever or elegant solution that uses something for a purpose for which it was not originally intended, usually for fun, but also…
The new board employs the company’s proprietary EcoVoltas QuarEgg+ technology, and can be specified with either a GaN…
The new board employs the company’s proprietary EcoVoltas QuarEgg+ technology, and can be specified with either a GaN or Silicon FET.
Fuji Electric introduces a new product in a well-known package to increase the output power of IGBT modules by applying…
Fuji Electric introduces a new product in a well-known package to increase the output power of IGBT modules by applying “RC-IBGT” (RC stands…
The five easy-to-use demonstration boards will allow engineers to more quickly exploit the capabilities of…
The five easy-to-use demonstration boards will allow engineers to more quickly exploit the capabilities of radiation-hardened (RH) gallium nitride…
The devices can efficiently deliver power to battery and fuel-cell passenger EVs, in addition to electric buses and trucks.
The devices can efficiently deliver power to battery and fuel-cell passenger EVs, in addition to electric buses and trucks.
New OptiMOS™ power MOSFET package enables innovative Source-Down technology for PQFN 3.3 x 3.3 mm2 in 25 V to 100 V variants.
New OptiMOS™ power MOSFET package enables innovative Source-Down technology for PQFN 3.3 x 3.3 mm2 in 25 V to 100 V variants.
Demonstrating the design of a bi-directional DC-DC converter for automotive 48 V power distribution, showing how GaN…
Demonstrating the design of a bi-directional DC-DC converter for automotive 48 V power distribution, showing how GaN technology is a powerful…
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