Learn how SiC JFETs beat MOSFETs for next-gen power. They offer ultralow loss, superior stability, and rugged avalanche protection—critical for…
Learn how SiC JFETs beat MOSFETs for next-gen power. They offer ultralow loss, superior stability, and rugged avalanche protection—critical for…
As the demand for high-efficiency energy systems grows, high-voltage super junction MOSFET technology has become a…
As the demand for high-efficiency energy systems grows, high-voltage super junction MOSFET technology has become a cornerstone for next-generation…
Learn how Hitachi Energy's IGCT platform scales to 8.5 kV. It provides high turn-off capability and supports…
Learn how Hitachi Energy's IGCT platform scales to 8.5 kV. It provides high turn-off capability and supports cost-efficient system designs for…
GaN-based power delivery board targets 96.5% efficiency and 2,100 W/in3 for NVIDIA's next-generation 800 VDC data center…
GaN-based power delivery board targets 96.5% efficiency and 2,100 W/in3 for NVIDIA's next-generation 800 VDC data center architecture.
This article details a GaN-based synchronous CCM-PFC design for hydraulic pump power supplies. It achieves 98.5% peak…
This article details a GaN-based synchronous CCM-PFC design for hydraulic pump power supplies. It achieves 98.5% peak efficiency at 300W and…
Sineng Electric, Onsemi, Crusoe, Redwood, FluxPoint Mitsubishi, Rohm, and Toshiba are planning for future energy needs.
Sineng Electric, Onsemi, Crusoe, Redwood, FluxPoint Mitsubishi, Rohm, and Toshiba are planning for future energy needs.
At APEC 2026, pSemi launched a 72 W DC-DC converter module to deliver ultra-thin, high-efficiency power delivery in…
At APEC 2026, pSemi launched a 72 W DC-DC converter module to deliver ultra-thin, high-efficiency power delivery in robotics, AI data centers, and…
At APEC 2026, Renesas unveiled two GaN solutions for high-power applications, from chargers to solar inverters.
At APEC 2026, Renesas unveiled two GaN solutions for high-power applications, from chargers to solar inverters.
At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for…
At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for high-voltage applications.
At APEC 2026, Power Integrations introduced its TopSwitchGaN 440 W, which unites PowiGaN switches with traditional…
At APEC 2026, Power Integrations introduced its TopSwitchGaN 440 W, which unites PowiGaN switches with traditional TOPSwitch architecture,…
Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions,…
Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions, boosting device efficiency…
Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.
Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.
Today at APEC, Texas Instruments demonstrated its isolated power modules and its proprietary IsoShield technology, aimed…
Today at APEC, Texas Instruments demonstrated its isolated power modules and its proprietary IsoShield technology, aimed at EV and data needs.…
Learn how rad-hard GaN FETs surpass silicon in satellite power systems. They offer superior SWaP, higher efficiency, and…
Learn how rad-hard GaN FETs surpass silicon in satellite power systems. They offer superior SWaP, higher efficiency, and radiation immunity for…
High power density in electronics necessitates efficient cooling. Learn how passive (heat sinks), forced (cooling…
High power density in electronics necessitates efficient cooling. Learn how passive (heat sinks), forced (cooling aggregates/fans), and liquid…
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current…
The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current blocking in a 2.9 × 2.8…
STMicroelectronics has introduced an automotive high-side driver for harsh electrical transients and isolated gate…
STMicroelectronics has introduced an automotive high-side driver for harsh electrical transients and isolated gate drivers for high-voltage…
The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a…
The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a single compact module for…
The 5th-gen 1200 V trench-assisted planar SiC MOSFETs offer 35% FoM improvement, improved switching behavior, and…
The 5th-gen 1200 V trench-assisted planar SiC MOSFETs offer 35% FoM improvement, improved switching behavior, and extended reliability testing.
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