Latest Semiconductors & ICs Articles

At APEC 2026, pSemi launched a 72 W DC-DC converter module to deliver ultra-thin, high-efficiency power delivery in…

At APEC 2026, pSemi launched a 72 W DC-DC converter module to deliver ultra-thin, high-efficiency power delivery in robotics, AI data centers, and…

At APEC 2026, Renesas unveiled two GaN solutions for high-power applications, from chargers to solar inverters.

At APEC 2026, Renesas unveiled two GaN solutions for high-power applications, from chargers to solar inverters.

At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for…

At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for high-voltage applications.

At APEC 2026, Power Integrations introduced its TopSwitchGaN 440 W, which unites PowiGaN switches with traditional…

At APEC 2026, Power Integrations introduced its TopSwitchGaN 440 W, which unites PowiGaN switches with traditional TOPSwitch architecture,…

Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions,…

Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions, boosting device efficiency…

Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.

Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.

Today at APEC, Texas Instruments demonstrated its isolated power modules and its proprietary IsoShield technology, aimed…

Today at APEC, Texas Instruments demonstrated its isolated power modules and its proprietary IsoShield technology, aimed at EV and data needs.…

Learn how rad-hard GaN FETs surpass silicon in satellite power systems. They offer superior SWaP, higher efficiency, and…

Learn how rad-hard GaN FETs surpass silicon in satellite power systems. They offer superior SWaP, higher efficiency, and radiation immunity for…

High power density in electronics necessitates efficient cooling. Learn how passive (heat sinks), forced (cooling…

High power density in electronics necessitates efficient cooling. Learn how passive (heat sinks), forced (cooling aggregates/fans), and liquid…

The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.

The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.

The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current…

The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current blocking in a 2.9 × 2.8…

STMicroelectronics has introduced an automotive high-side driver for harsh electrical transients and isolated gate…

STMicroelectronics has introduced an automotive high-side driver for harsh electrical transients and isolated gate drivers for high-voltage…

The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a…

The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a single compact module for…

The 5th-gen 1200 V trench-assisted planar SiC MOSFETs offer 35% FoM improvement, improved switching behavior, and…

The 5th-gen 1200 V trench-assisted planar SiC MOSFETs offer 35% FoM improvement, improved switching behavior, and extended reliability testing.

IEC partial standards miss dv/dt, thermal, and micro-PD effects in power modules, limiting their value for…

IEC partial standards miss dv/dt, thermal, and micro-PD effects in power modules, limiting their value for inverter-driven reliability prediction.

Learn how Mitsubishi Electric’s latest Unifull SiC modules combine advanced performance with enhanced power cycling…

Learn how Mitsubishi Electric’s latest Unifull SiC modules combine advanced performance with enhanced power cycling capability enabled by…

The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140…

The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140 mΩ RDS(on), 10 A output,…

The integrated three-phase BLDC motor drive inverter integrates control, sensing, and communication to deliver up to 20…

The integrated three-phase BLDC motor drive inverter integrates control, sensing, and communication to deliver up to 20 ARMS for humanoid joint…

The ST2000JXH35A raises validated turn-off and short-circuit test voltage to 4.5 kV, targeting reduced series device…

The ST2000JXH35A raises validated turn-off and short-circuit test voltage to 4.5 kV, targeting reduced series device counts in high-voltage…