The new power package integrates two 650V GaN power transistors with optimized gate drivers and circuit protection.
The new power package integrates two 650V GaN power transistors with optimized gate drivers and circuit protection.
This article highlights Flex BMR685’s power-handling capabilities make it well-suited to these high-power RF Power…
This article highlights Flex BMR685’s power-handling capabilities make it well-suited to these high-power RF Power Amplifier applications, for…
Italian automotive manufacturer Marelli has announced the launch of a new line of power modules with a 99.5% efficiency…
Italian automotive manufacturer Marelli has announced the launch of a new line of power modules with a 99.5% efficiency rate for motorsport,…
The new driver delivers gate-driving voltages of up to 26 volts and operates from a high-voltage rail up to 1200V
The new driver delivers gate-driving voltages of up to 26 volts and operates from a high-voltage rail up to 1200V
The new AEC-Q101 qualified device sports a typical RDS(ON) of 33mΩ and a 15 volt recommended gate driving voltage
The new AEC-Q101 qualified device sports a typical RDS(ON) of 33mΩ and a 15 volt recommended gate driving voltage
This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates…
This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates selection and performance…
This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and…
This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and operates from a…
The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications
The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications
This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um…
This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um power management and mixed…
The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.
The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.
The new series offers industry-leading efficiencies, switching speeds, power density all with low EMI emission.
The new series offers industry-leading efficiencies, switching speeds, power density all with low EMI emission.
This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology,…
This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology, offering the widest range of…
The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of…
The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of the main benefits of…
The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications
The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications
The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and…
The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway…
Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.
Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.
The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon
The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon
The Fraunhofer Institute for Solar Energy Systems (ISE) has developed a highly compact inverter for direct feeding into…
The Fraunhofer Institute for Solar Energy Systems (ISE) has developed a highly compact inverter for direct feeding into the medium-voltage grid.
Fuji Electric has started mass production of its HPnC module outfitted with a 7th generation X-Series IGBT, targeting the…
Fuji Electric has started mass production of its HPnC module outfitted with a 7th generation X-Series IGBT, targeting the railway market.
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