ON Semiconductor Expands Its Line Of 650V SiC MOSFETs
The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.
These new Silicon Carbide MOSFETs from ON Semiconductor are seen as replacements for outmoded silicon devices in a wide range of switching applications. They will find wide applicability in tough arenas where neither efficiency, power density nor reliability can be compromised.
Image courtesy of ON Semiconductor
The Rsp Figure of Merit
On Semiconductor’s new generation of SiC MOSFETs employ a novel active cell design along with advanced thin wafer technology. This accounts the devices’ extremely low figure for the product of RDSON x AREA. This product is defined as the Rsp figure of merit. This same technology also enables lower energy losses
An internal gate resistor (Rg) eliminates the need to slow down devices artificially with external gate resistors. The four new units also deliver greater surge protection and avalanche capability. These factors, along with and short circuit robustness, add up to higher reliability and longer device lifetimes.
Commenting on the new releases, Asif Jakwani, senior vice president of the Advanced Power Division at ON Semiconductor said: “In modern power applications such as on-board chargers (OBC) for EV and other applications including renewable energy, enterprise computing and telecom, efficiency, reliability and power density are constant challenges for designers. These new SiC MOSFETs significantly improve performance over the equivalent silicon switching technologies, allowing engineers to meet these challenging design goals. The enhanced performance delivers lower losses that enhance efficiency and reduce thermal management needs as well as reducing EMI. The end result of using these new SiC MOSFETs is a smaller, lighter, more efficient and more reliable power solution.”
On Semiconductor’s 650 MOSFETS
The company provides a convenient guide to its 650 Volts MOFETs, both new and established. It also provides datasheets for the four new members of the group. All are N-channel devices. They are:
All units feature typical RDS(ON)s are 12mΩ and 18mΩ at VGSs of 18 volts and 15 volts, respectively. They can all dissipate 500 watts at 25℃ and they can operate at junction temperatures ranging from -55 to +175℃.
- Single pulse drain to source avalanche energy (subject to conditions) is 84 mJ.
- Gate Charge (QGTOT) is 283 nC.
Image courtesy of ON Semiconductor.
The NVBG015N065SC1 and the NTBG015N065SC1 are available in D2PAK-7 packages.
- Both the NVBG015N065SC1 and the NTBG015N065SC1 both can handle up to 145 amps continuously and 422 amps pulsed at 25℃.
- Single source current (body diode) is 111 amps
- The effective output capacitance (COSS) is 424 pF.
The NVH4L015N065SC1 and the NTH4L015N065SC1 come in TO247-4L packages
- NVH4L015N065SC1 and the NTH4L015N065SC1 handle 142 amps continuously and 483 amps pulsed at 25℃.
- Single source current (body diode) is 114 amps
- The effective output capacitance (COSS) is 430 pF.
Applications include
- Industrial applications
- Automotive DC/DC converters
- Automotive traction inverter
- On-board chargers for EVs
- Solar inverters
- Server power supplies
- Uninterruptible power supplies (UPS) .
- Telecom
Regulatory Information
- Qualified for Automotive According to AEC−Q101
