New Industry Products

Toshiba’s SiC MOSFET Module Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

March 02, 2021 by Hailey Stewart

The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway vehicles, and renewable energy power generation systems.

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating a newly developed dual-channel SiC MOSFET chips with ratings of 3300V and 800A, for industrial applications. Volume production will start in May 2021.

Image courtesy of Toshiba Electronics.

To achieve a channel temperature of 175°C, the new product adopts an iXPLV (intelligent fleXible Package Low Voltage) package with silver sintering internal bonding technology and high mounting-compatibility. The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway vehicles, and renewable energy power generation systems.

 

Applications

  • Inverters and converters for railway vehicles
  • Renewable energy power generation systems
  • Industrial motor control equipment

 

Features

  • Drain-source voltage rating: VDSS=3300V
  • Drain current rating: ID=800A Dual
  • High channel temperature range: Tch=175°C
  • Low loss :
    • Eon=250mJ (typ.)
    • Eoff=240mJ (typ.)
    • VDS(on)sense=1.6V (typ.)
  • Low stray inductance : Ls=12nH (typ.)
  • High power density small iXPLV package