Toshiba’s SiC MOSFET Module Contributes to Higher Efficiency and Miniaturization of Industrial Equipment
The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway vehicles, and renewable energy power generation systems.
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating a newly developed dual-channel SiC MOSFET chips with ratings of 3300V and 800A, for industrial applications. Volume production will start in May 2021.
Image courtesy of Toshiba Electronics.
To achieve a channel temperature of 175°C, the new product adopts an iXPLV (intelligent fleXible Package Low Voltage) package with silver sintering internal bonding technology and high mounting-compatibility. The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway vehicles, and renewable energy power generation systems.
Applications
- Inverters and converters for railway vehicles
- Renewable energy power generation systems
- Industrial motor control equipment
Features
- Drain-source voltage rating: VDSS=3300V
- Drain current rating: ID=800A Dual
- High channel temperature range: Tch=175°C
- Low loss :
- Eon=250mJ (typ.)
- Eoff=240mJ (typ.)
- VDS(on)sense=1.6V (typ.)
- Low stray inductance : Ls=12nH (typ.)
- High power density small iXPLV package