The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of the main benefits of…
The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of the main benefits of…
The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications
The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications
The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and…
The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway…
Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.
Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.
The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon
The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon
The Fraunhofer Institute for Solar Energy Systems (ISE) has developed a highly compact inverter for direct feeding into…
The Fraunhofer Institute for Solar Energy Systems (ISE) has developed a highly compact inverter for direct feeding into the medium-voltage grid.
Fuji Electric has started mass production of its HPnC module outfitted with a 7th generation X-Series IGBT, targeting the…
Fuji Electric has started mass production of its HPnC module outfitted with a 7th generation X-Series IGBT, targeting the railway market.
The GS-EVB-HB-66508B-RN and the GS-EVB-HB-66516T-RN are half bridge daughter cards that can handle 3kW and 6kW, respectively
The GS-EVB-HB-66508B-RN and the GS-EVB-HB-66516T-RN are half bridge daughter cards that can handle 3kW and 6kW, respectively
MinDCet has implemented GaN Systems’ enhancement-mode, (e-mode) gallium-nitride (GaN) high-electron-mobility…
MinDCet has implemented GaN Systems’ enhancement-mode, (e-mode) gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) into…
By implementing Efficient Power Conversion’s (EPC) Gallium-Nitride (GaN) transistors, BrightLoop Converters’ DC-DC…
By implementing Efficient Power Conversion’s (EPC) Gallium-Nitride (GaN) transistors, BrightLoop Converters’ DC-DC Buck Converter looks to…
This article highlights STMicroelectronics’ MasterGaN® platform, in which MasterGaN2 is the first in the new family…
This article highlights STMicroelectronics’ MasterGaN® platform, in which MasterGaN2 is the first in the new family to contain two asymmetric…
Philips and GaN Systems have created a new fast-charging, gallium nitride (GaN), power charger that is able to withstand…
Philips and GaN Systems have created a new fast-charging, gallium nitride (GaN), power charger that is able to withstand 650V operating voltage…
Available in EP7 packages, the new units feature an input voltage range from 9 to 36 volts, with a saturation current of 4.5 amps.
Available in EP7 packages, the new units feature an input voltage range from 9 to 36 volts, with a saturation current of 4.5 amps.
Performance tests show it can charge three digital devices simultaneously while also supplying power to three 220V…
Performance tests show it can charge three digital devices simultaneously while also supplying power to three 220V devices, such as speakers, TVs,…
This article highlights MinDCet GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN…
This article highlights MinDCet GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN gate driver and two GaN…
The PA is internally matched and requires no additional external RF components, enabling designers and system integrators…
The PA is internally matched and requires no additional external RF components, enabling designers and system integrators to maximize design by…
The new kits are designed to give designers a first hand look at the benefits of gallium nitride semiconductors
The new kits are designed to give designers a first hand look at the benefits of gallium nitride semiconductors
GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration…
GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration with ON Semiconductor.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.
Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.
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