The GS-EVB-HB-66508B-RN and the GS-EVB-HB-66516T-RN are half bridge daughter cards that can handle 3kW and 6kW, respectively
The GS-EVB-HB-66508B-RN and the GS-EVB-HB-66516T-RN are half bridge daughter cards that can handle 3kW and 6kW, respectively
MinDCet has implemented GaN Systems’ enhancement-mode, (e-mode) gallium-nitride (GaN) high-electron-mobility…
MinDCet has implemented GaN Systems’ enhancement-mode, (e-mode) gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) into…
By implementing Efficient Power Conversion’s (EPC) Gallium-Nitride (GaN) transistors, BrightLoop Converters’ DC-DC…
By implementing Efficient Power Conversion’s (EPC) Gallium-Nitride (GaN) transistors, BrightLoop Converters’ DC-DC Buck Converter looks to…
This article highlights STMicroelectronics’ MasterGaN® platform, in which MasterGaN2 is the first in the new family…
This article highlights STMicroelectronics’ MasterGaN® platform, in which MasterGaN2 is the first in the new family to contain two asymmetric…
Philips and GaN Systems have created a new fast-charging, gallium nitride (GaN), power charger that is able to withstand…
Philips and GaN Systems have created a new fast-charging, gallium nitride (GaN), power charger that is able to withstand 650V operating voltage…
Available in EP7 packages, the new units feature an input voltage range from 9 to 36 volts, with a saturation current of 4.5 amps.
Available in EP7 packages, the new units feature an input voltage range from 9 to 36 volts, with a saturation current of 4.5 amps.
Performance tests show it can charge three digital devices simultaneously while also supplying power to three 220V…
Performance tests show it can charge three digital devices simultaneously while also supplying power to three 220V devices, such as speakers, TVs,…
This article highlights MinDCet GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN…
This article highlights MinDCet GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN gate driver and two GaN…
The PA is internally matched and requires no additional external RF components, enabling designers and system integrators…
The PA is internally matched and requires no additional external RF components, enabling designers and system integrators to maximize design by…
The new kits are designed to give designers a first hand look at the benefits of gallium nitride semiconductors
The new kits are designed to give designers a first hand look at the benefits of gallium nitride semiconductors
GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration…
GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration with ON Semiconductor.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.
Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.
The partnership between Microchip and Efficient Power Conversion (EPC) has yielded two 250W, 48V DC-DC solutions for…
The partnership between Microchip and Efficient Power Conversion (EPC) has yielded two 250W, 48V DC-DC solutions for ultra-thin laptops, displays,…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active power management, and…
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for…
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for fast switching, wide…
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including…
This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including AEC-Q101 qualification and…
This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC…
This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC modules utilizing this…
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