The new drivers feature digital current sensing and are designed for applications powered by 12V batteries.
The new drivers feature digital current sensing and are designed for applications powered by 12V batteries.
The two power supply unit (PSU) designs offer either full bridge LLC resonant converter or bridgeless totem-pole PFC formats.
The two power supply unit (PSU) designs offer either full bridge LLC resonant converter or bridgeless totem-pole PFC formats.
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
The first series member is a highly integrated half-bridge device aimed at wireless charging applications.
The first series member is a highly integrated half-bridge device aimed at wireless charging applications.
The isolated, 1.5W DC/DC device employs a tiny internal planar transformer to cut power solution sizes in half for EVS and HEVs.
The isolated, 1.5W DC/DC device employs a tiny internal planar transformer to cut power solution sizes in half for EVS and HEVs.
The new unit features multiple levels of control, affording a high level of protection for SiC MOSFETs and the systems they power.
The new unit features multiple levels of control, affording a high level of protection for SiC MOSFETs and the systems they power.
The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple…
The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple power bussing.
The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.
The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.
The new design is fully customizable and will reduce time to market for a variety of high-power applications.
The new design is fully customizable and will reduce time to market for a variety of high-power applications.
Central Semiconductor Corp., introduces its CAK3-012C & CAK6-042C series of 5G bi-directional transient voltage…
Central Semiconductor Corp., introduces its CAK3-012C & CAK6-042C series of 5G bi-directional transient voltage suppressors (TVS).
PSU exceeds 80+ Titanium efficiency requirements and presents the highest power density solution at a lower cost than…
PSU exceeds 80+ Titanium efficiency requirements and presents the highest power density solution at a lower cost than traditional silicon solutions.
Rechargeable, sustainable, and energy-efficient, the solid-state battery (SSB) can potentially put an end to lithium-ion…
Rechargeable, sustainable, and energy-efficient, the solid-state battery (SSB) can potentially put an end to lithium-ion batteries and redefine…
New technology enables electric buses and other e-transportation power systems to meet and exceed stringent environmental…
New technology enables electric buses and other e-transportation power systems to meet and exceed stringent environmental conditions while…
Silicon Designs, Inc., today announced that three of its industry best-selling industrial-grade surface mount MEMS…
Silicon Designs, Inc., today announced that three of its industry best-selling industrial-grade surface mount MEMS capacitive accelerometer chip…
The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.
The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.
The gate drivers separately target the popular multiple parallel EconoDual module or the “New Dual” 100 mm x 140 mm…
The gate drivers separately target the popular multiple parallel EconoDual module or the “New Dual” 100 mm x 140 mm IGBT modules.
The two companies agree to joint development of the next generation of their successful Gallium Nitride (GaN) technology.
The two companies agree to joint development of the next generation of their successful Gallium Nitride (GaN) technology.
Alpha and Omega Semiconductor’s (AOS) smart protection switch is aimed at Type-C Power Delivery applications.
Alpha and Omega Semiconductor’s (AOS) smart protection switch is aimed at Type-C Power Delivery applications.
Both devices include both the gate driver and two enhancement-mode GaN power transistors in a single highly integrated package.
Both devices include both the gate driver and two enhancement-mode GaN power transistors in a single highly integrated package.
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