The N-Channel device’s low-spike capability serves to diminish overshoot in power switching applications.
The N-Channel device’s low-spike capability serves to diminish overshoot in power switching applications.
This circuit uses a synchronous MOSFET that lets the bootstrap voltage reach the logic supply voltage, VCC, allowing the…
This circuit uses a synchronous MOSFET that lets the bootstrap voltage reach the logic supply voltage, VCC, allowing the driver to operate from a…
The Dual Output 3+1 Phase Digital VCOT controller provides power for 5G subsystems including the CU, DU, and RU platforms.
The Dual Output 3+1 Phase Digital VCOT controller provides power for 5G subsystems including the CU, DU, and RU platforms.
For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium…
For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium nitride (GaN) based power…
The new Power management ICs (PMICs) are aimed at powering automotive AI systems on chips (SoC).
The new Power management ICs (PMICs) are aimed at powering automotive AI systems on chips (SoC).
The device integrates all three bottom shunt amplifiers and can support external MOSFETs for motor currents of up to 100 amps.
The device integrates all three bottom shunt amplifiers and can support external MOSFETs for motor currents of up to 100 amps.
AHKAN hopes this technology will improve power handling, heat management, durability, and more.
AHKAN hopes this technology will improve power handling, heat management, durability, and more.
The new test systems offer power options of up to 270 KW, with capabilities of up to 1.5 MW upon parallelization.
The new test systems offer power options of up to 270 KW, with capabilities of up to 1.5 MW upon parallelization.
EPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than…
EPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than traditional silicon Rad…
A series of AC/DC and DC/AC baseless power converters were developed in cooperation with Europe’s Clean Sky Consortium.
A series of AC/DC and DC/AC baseless power converters were developed in cooperation with Europe’s Clean Sky Consortium.
ST’s MasterGaN concept simplifies migrating from ordinary silicon MOSFETs to GaN wide-bandgap power technology.
ST’s MasterGaN concept simplifies migrating from ordinary silicon MOSFETs to GaN wide-bandgap power technology.
The new devices allow designers to reap the benefits of Gallium Nitride (GaN) technology at a reduced cost per watt.
The new devices allow designers to reap the benefits of Gallium Nitride (GaN) technology at a reduced cost per watt.
The new evaluation board employs onsemi's NCP1680 controller and GaN Systems’ GS66508B 650V Enhancement Mode GaN…
The new evaluation board employs onsemi's NCP1680 controller and GaN Systems’ GS66508B 650V Enhancement Mode GaN Transistor.
The new silicon carbide (SiC) diodes feature higher speed and greater efficiency than last generation silicon diodes.
The new silicon carbide (SiC) diodes feature higher speed and greater efficiency than last generation silicon diodes.
The effort marks ST’s commitment to the high power, high voltage requirements of the automotive and industrial markets.
The effort marks ST’s commitment to the high power, high voltage requirements of the automotive and industrial markets.
Companies Introduce World’s First Bridgeless Totem Pole PFC Evaluation Board.
Companies Introduce World’s First Bridgeless Totem Pole PFC Evaluation Board.
EPC Space is providing Rad Hard GaN power devices to Astranis for use in the latest build of new small geostationary…
EPC Space is providing Rad Hard GaN power devices to Astranis for use in the latest build of new small geostationary communications satellites.
Enhancements to the online power design tool make identifying optimal SiC FET design solutions even easier.
Enhancements to the online power design tool make identifying optimal SiC FET design solutions even easier.
The new active clamp flyback (ACF) controller operates over input ranges of 90 to 165VAC and enables efficiencies of up to 95%
The new active clamp flyback (ACF) controller operates over input ranges of 90 to 165VAC and enables efficiencies of up to 95%
Murata high-density silicon capacitors are developed with a semiconductor MOS process and are using the third dimension…
Murata high-density silicon capacitors are developed with a semiconductor MOS process and are using the third dimension to substantially increase…
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