Silicon Designs, Inc., today announced that three of its industry best-selling industrial-grade surface mount MEMS capacitive accelerometer chip…
Silicon Designs, Inc., today announced that three of its industry best-selling industrial-grade surface mount MEMS capacitive accelerometer chip…
Based on the Infineon’s TRENCHSTOP IGBT 7 chips, the company adds 450A, 600A, and 750A versions to its popular family…
Based on the Infineon’s TRENCHSTOP IGBT 7 chips, the company adds 450A, 600A, and 750A versions to its popular family of power modules.
TCO Series capacitors meet AEC-Q200 requirements, exhibit low DCL and a benign failure mode, and are ideal for use in…
TCO Series capacitors meet AEC-Q200 requirements, exhibit low DCL and a benign failure mode, and are ideal for use in low- and medium-power…
The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.
The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.
The gate drivers separately target the popular multiple parallel EconoDual module or the “New Dual” 100 mm x 140 mm…
The gate drivers separately target the popular multiple parallel EconoDual module or the “New Dual” 100 mm x 140 mm IGBT modules.
Parade’s PS188 Combines a USB 3.2 Hub, DisplayPort™ 1.4 to HDMI™ 2.0 Converter, and Dual Power Delivery 3.0…
Parade’s PS188 Combines a USB 3.2 Hub, DisplayPort™ 1.4 to HDMI™ 2.0 Converter, and Dual Power Delivery 3.0 Controllers for Single-Chip…
The two companies agree to joint development of the next generation of their successful Gallium Nitride (GaN) technology.
The two companies agree to joint development of the next generation of their successful Gallium Nitride (GaN) technology.
Alpha and Omega Semiconductor’s (AOS) smart protection switch is aimed at Type-C Power Delivery applications.
Alpha and Omega Semiconductor’s (AOS) smart protection switch is aimed at Type-C Power Delivery applications.
Both devices include both the gate driver and two enhancement-mode GaN power transistors in a single highly integrated package.
Both devices include both the gate driver and two enhancement-mode GaN power transistors in a single highly integrated package.
The N-Channel device’s low-spike capability serves to diminish overshoot in power switching applications.
The N-Channel device’s low-spike capability serves to diminish overshoot in power switching applications.
This circuit uses a synchronous MOSFET that lets the bootstrap voltage reach the logic supply voltage, VCC, allowing the…
This circuit uses a synchronous MOSFET that lets the bootstrap voltage reach the logic supply voltage, VCC, allowing the driver to operate from a…
This improved power rating allows the RNCF0201 to be used for applications that may have previously required an 0402 or…
This improved power rating allows the RNCF0201 to be used for applications that may have previously required an 0402 or larger size chip resistor.
The Dual Output 3+1 Phase Digital VCOT controller provides power for 5G subsystems including the CU, DU, and RU platforms.
The Dual Output 3+1 Phase Digital VCOT controller provides power for 5G subsystems including the CU, DU, and RU platforms.
The new series of devices, aimed at automotive applications, features overvoltage, undervoltage, and analog monitoring in…
The new series of devices, aimed at automotive applications, features overvoltage, undervoltage, and analog monitoring in a single IC.
For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium…
For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium nitride (GaN) based power…
The new Power management ICs (PMICs) are aimed at powering automotive AI systems on chips (SoC).
The new Power management ICs (PMICs) are aimed at powering automotive AI systems on chips (SoC).
The device integrates all three bottom shunt amplifiers and can support external MOSFETs for motor currents of up to 100 amps.
The device integrates all three bottom shunt amplifiers and can support external MOSFETs for motor currents of up to 100 amps.
AHKAN hopes this technology will improve power handling, heat management, durability, and more.
AHKAN hopes this technology will improve power handling, heat management, durability, and more.
The new test systems offer power options of up to 270 KW, with capabilities of up to 1.5 MW upon parallelization.
The new test systems offer power options of up to 270 KW, with capabilities of up to 1.5 MW upon parallelization.
EPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than…
EPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than traditional silicon Rad…
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