New Industry Products

Toshiba’s 40 Volt, Low-Spike-Type Power MOSFET Aims to Reduce EMI

September 06, 2021 by Gary Elinoff

The N-Channel device’s low-spike capability serves to diminish overshoot in power switching applications.

The TPHR7404PU employs Toshiba’s latest generation U-MOSIX-H process.

The TPHR7404PU. Image courtesy of Toshiba

The TPHR7404PU features a cell structure utilizing a parasitic snubber, lowering voltage peaks, effectively reducing the noise and ringing inherent to high speed switching. With a VGS of 10 volts, maximum RDS(ON) is 0.74mΩ. The problems associated with unintended turn on are avoided due to the MOSFET’s gate threshold voltage, which ranges from 2 to 3 volts (ID = 1 mA)


Toshiba’s Low Spike Technology

Specific details for the U-MOSIX-H process are scarce, but this isn’t Toshiba’s first effort in this arena. A glimpse at the structures of U-MOSVIII-H and IX-H generations will be revealing.

Due to the nature of the process, parasitic resistances and capacitances are inevitably introduced between the drain and the source, as illustrated in the diagram below.


A MOSFET parasitic snubber circuit. Image courtesy of Toshiba

The resistance and capacitance combine to form a classic RC snubber circuit, again as illustrated in the diagram. This snubber will, of course, serve well to reduce spikes, aka overshoots, to the benefit of designers.


Standout Features

  • Channel-to-case thermal resistance is 0.71°C/W 

  • Switching gate charge (QSW) is 34 nC (typical)

  • Output charge  (QOSS) is 90 nC (typical)

  • Leakage current (IDSS) is 10 μA (max) with VDS at 40 volts


Absolute Maximums

These ratings are generally taken at 25℃. They may be subject to conditions enumerated in the datasheet.

  • Drain-source voltage is 40 volts

  • Gate-source voltage is ±20 volts

  • Drain current is 150 amps

  • Drain current, pulsed (t = 100 μs) is 500 amps

  • Power dissipation is 210 watts

  • Single-pulse avalanche energy is 298 mJ

  • Channel temperature is 175 ℃


Thermal Characteristics

These are maximum values:

  • Channel-to-case thermal resistance is 0.71 ℃/W

  • Channel-to-ambient thermal resistance 50 ℃/W

  • Channel-to-ambient thermal resistance 156 ℃/W


Static Electrical Conditions

  • Gate leakage current is ±0.1 µA (max)

  • Drain cut-off current is 10 µA (max)

  • Drain-source breakdown voltage is a minimum of 40 or 25 volts, depending of on gate-source voltage

  • Drain-source breakdown voltage is 25 volts, minimum


Dynamic Electrical Characteristics

The specifications below are typical values:

  • Input capacitance is 6960pF

  • Reverse transfer capacitance is 130pF

  • Output capacitance is 2060pF

  • Gate resistance is 3Ω


Gate Charge Characteristics

The characteristics cited here are typical values:

  • Total gate charge (gate-source plus gate-drain) is 98 or 62 nC, depending on gate-source voltage

  • Gate-drain charge is 18 nC

  • Gate switch charge is 34 nC

  • Output charge is 90 nC



  • High-efficiency DC-DC converters

  • Motor drivers

  • Switching voltage regulators



  • The TPHR7404PU is available in a 5 x 6 mm SOP advance package


Regulatory and Safety

  • Toshiba recommends that designers and OEMs contact a sales representative about RoHS compatibility