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EPC Adds Another Rad-hard Gallium Nitride Power FET

EPC Adds Another Rad-hard Gallium Nitride Power FET

The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…


GaN Systems, EPC Both Unveil New GaN Power Transistors

GaN Systems, EPC Both Unveil New GaN Power Transistors

EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is aimed at terrestrial…


Diodes Incorporated Unveils New Space-saving Schottky Rectifiers

Diodes Incorporated Unveils New Space-saving Schottky Rectifiers

The fresh diodes “set new benchmarks” for current density in their class, the company says.


Efficient Power Conversion Unveils New 200 V Rad-hard GaN FET

Efficient Power Conversion Unveils New 200 V Rad-hard GaN FET

The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…


EPC Space Unveils New 40 V Rad-Hard GaN Power Transistor

EPC Space Unveils New 40 V Rad-Hard GaN Power Transistor

The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.


LEMO Expands its M Series with High-power Connectors

LEMO Expands its M Series with High-power Connectors

Developed to satisfy the stringent requirements of high-torque applications, the new ratchet-coupling offerings can handle currents of up to 430 A.


EPC Claims its New 350 V GaN Transistor is 20 Times Smaller than Comparable Silicon Offerings

EPC Claims its New 350 V GaN Transistor is 20 Times Smaller than Comparable Silicon Offerings

The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ


Microchip Expands its Silicon Carbide Power Portfolio with New 3.3 kV MOSFETs and Schottky Barrier Diodes

Microchip Expands its Silicon Carbide Power Portfolio with New 3.3 kV MOSFETs and Schottky Barrier Diodes

The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.


STMicroelectronics Releases a Series of Nine Economical Radiation-Hardened ICs Aimed at New Space

STMicroelectronics Releases a Series of Nine Economical Radiation-Hardened ICs Aimed at New Space

The new units are designed to lower the total costs associated with today’s new generation of low earth orbit (LEO) satellites.


Teledyne e2v HiRel’s New 650 V, 60 A GaN HEMTs are Space-screened at NASA’s Top Assurance Level

Teledyne e2v HiRel’s New 650 V, 60 A GaN HEMTs are Space-screened at NASA’s Top Assurance Level

The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified to NASA’s full Level 1…


Teledyne e2v HiRel Releases a 100 V Transistor Driver for 20 MHz FET and GaN Transistors

Teledyne e2v HiRel Releases a 100 V Transistor Driver for 20 MHz FET and GaN Transistors

The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…


Kyocera AVX Expands Its Line of Wet Tantalum Capacitors

Kyocera AVX Expands Its Line of Wet Tantalum Capacitors

Kyocera AVX in February added a new 470 µF/125V code to its TWA-Y series, COTS-Plus line of high-temperature, long-living capacitors.


EPC Space Expands its Rad-Hard GaN Offerings With New Demo Boards

EPC Space Expands its Rad-Hard GaN Offerings With New Demo Boards

The five easy-to-use demonstration boards will allow engineers to more quickly exploit the capabilities of radiation-hardened (RH) gallium nitride…


Solitron Devices Announces 1200V, 100A Power Modules

Solitron Devices Announces 1200V, 100A Power Modules

Solitron Devices is pleased to announce the introduction of the SD11906, SD11907, SD11956 and SD11957 1200V Silicon Carbide (SiC) Half Bridge…


Keysight Partners with University for Wide Bandgap Semiconductor Testing

Keysight Partners with University for Wide Bandgap Semiconductor Testing

Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.


Richardson RFPD Announces Availability of Analog Devices’ 6–14 GHz, Low Phase Noise GaAs MMIC Amplifier

Richardson RFPD Announces Availability of Analog Devices’ 6–14 GHz, Low Phase Noise GaAs MMIC Amplifier

ADL8150 features low phase noise of -172 dBc/Hz at 10 kHz offset, 12 dB signal gain, and +30dBm OIP3.


Solitron Devices Announces 1200V Silicon Carbide Half Bridge Power Module

Solitron Devices Announces 1200V Silicon Carbide Half Bridge Power Module

The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple power bussing.


Vishay Intertechnology Enhances Thick Film Chip Resistor in 1206 Case Size With Higher 0.5 W Power Rating

Vishay Intertechnology Enhances Thick Film Chip Resistor in 1206 Case Size With Higher 0.5 W Power Rating

AEC-Q200 Qualified Device Saves Board Space While Lowering Component Counts and Placement Costs.


Vishay’s RCV-AT Series of Film Chip Resistors Save Board Space, Lower Component Counts

Vishay’s RCV-AT Series of Film Chip Resistors Save Board Space, Lower Component Counts

Vishay Intertechnology introduces a new series of AEC-Q200 qualified thick film chip resistors with operating voltages up to 3 kV in the 2010 and…


STMicroelectronics Collaborates with Xilinx to Power Space-Hardened FPGAs

STMicroelectronics Collaborates with Xilinx to Power Space-Hardened FPGAs

STMicroelectronics (ST) devices to provide power for Xilinx’s UltraScale XQRKU060 radiation-tolerant FPGA.