The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is…
EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is aimed at terrestrial…
The fresh diodes “set new benchmarks” for current density in their class, the company says.
The fresh diodes “set new benchmarks” for current density in their class, the company says.
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
Developed to satisfy the stringent requirements of high-torque applications, the new ratchet-coupling offerings can…
Developed to satisfy the stringent requirements of high-torque applications, the new ratchet-coupling offerings can handle currents of up to 430 A.
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
The new units are designed to lower the total costs associated with today’s new generation of low earth orbit (LEO) satellites.
The new units are designed to lower the total costs associated with today’s new generation of low earth orbit (LEO) satellites.
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified…
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified to NASA’s full Level 1…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
Kyocera AVX in February added a new 470 µF/125V code to its TWA-Y series, COTS-Plus line of high-temperature,…
Kyocera AVX in February added a new 470 µF/125V code to its TWA-Y series, COTS-Plus line of high-temperature, long-living capacitors.
The five easy-to-use demonstration boards will allow engineers to more quickly exploit the capabilities of…
The five easy-to-use demonstration boards will allow engineers to more quickly exploit the capabilities of radiation-hardened (RH) gallium nitride…
Solitron Devices is pleased to announce the introduction of the SD11906, SD11907, SD11956 and SD11957 1200V Silicon…
Solitron Devices is pleased to announce the introduction of the SD11906, SD11907, SD11956 and SD11957 1200V Silicon Carbide (SiC) Half Bridge…
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
ADL8150 features low phase noise of -172 dBc/Hz at 10 kHz offset, 12 dB signal gain, and +30dBm OIP3.
ADL8150 features low phase noise of -172 dBc/Hz at 10 kHz offset, 12 dB signal gain, and +30dBm OIP3.
The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple…
The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple power bussing.
AEC-Q200 Qualified Device Saves Board Space While Lowering Component Counts and Placement Costs.
AEC-Q200 Qualified Device Saves Board Space While Lowering Component Counts and Placement Costs.
Vishay Intertechnology introduces a new series of AEC-Q200 qualified thick film chip resistors with operating voltages up…
Vishay Intertechnology introduces a new series of AEC-Q200 qualified thick film chip resistors with operating voltages up to 3 kV in the 2010 and…
STMicroelectronics (ST) devices to provide power for Xilinx’s UltraScale XQRKU060 radiation-tolerant FPGA.
STMicroelectronics (ST) devices to provide power for Xilinx’s UltraScale XQRKU060 radiation-tolerant FPGA.