Learn how front-side copper metallization (FSM) is unlocking the full potential of Silicon Carbide (SiC) MOSFETs, especially as devices shrink in…
Learn how front-side copper metallization (FSM) is unlocking the full potential of Silicon Carbide (SiC) MOSFETs, especially as devices shrink in…
SiC trench gate MOSFETs deliver superior performance in terms of both switching and conduction losses, but careful…
SiC trench gate MOSFETs deliver superior performance in terms of both switching and conduction losses, but careful attention must be paid to the…
Wise Integration’s WiseWare 1.1 targets compact, high-efficiency AC-DC converters with integrated ZVS control and broad…
Wise Integration’s WiseWare 1.1 targets compact, high-efficiency AC-DC converters with integrated ZVS control and broad GaN compatibility.
The new SiC-LV100 SiC-MOSFET module features an optimized structure that tackles the challenges of high current density…
The new SiC-LV100 SiC-MOSFET module features an optimized structure that tackles the challenges of high current density and high-speed switching.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
The GaN releases expand Renesas’ ecosystem-driven approach for the wide bandgap semiconductor.
The GaN releases expand Renesas’ ecosystem-driven approach for the wide bandgap semiconductor.
Learn how 100 V GaN devices are serving the needs of 48 V applications in data centers, renewable energy, and motor drives.
Learn how 100 V GaN devices are serving the needs of 48 V applications in data centers, renewable energy, and motor drives.
Silicon Carbide (SiC) has a 3x bandgap compared to silicon. Learn how unipolar devices like MOSETs in the several kV…
Silicon Carbide (SiC) has a 3x bandgap compared to silicon. Learn how unipolar devices like MOSETs in the several kV range are possible with SiC.
In part two of this article series, we dive deeper into the design details of the solution and present experimental…
In part two of this article series, we dive deeper into the design details of the solution and present experimental results for a 240 VAC input to…
Unidirectional switches (UDS) have long served power conversion systems, but they come with inherent limitations. A…
Unidirectional switches (UDS) have long served power conversion systems, but they come with inherent limitations. A bidirectional GaN switch…
This year’s PCIM featured wide bandgap products from Rohde & Schwarz, Wise Integration, and Texas Instruments.
This year’s PCIM featured wide bandgap products from Rohde & Schwarz, Wise Integration, and Texas Instruments.
Infineon, EPC, and Navitas unveiled SiC and GaN technologies for electric vehicles, data centers, robotics, and…
Infineon, EPC, and Navitas unveiled SiC and GaN technologies for electric vehicles, data centers, robotics, and industrial motor drives at PCIM…
The new device keeps the high-frequency switching benefits of GaN while addressing the historical lack of a true reverse…
The new device keeps the high-frequency switching benefits of GaN while addressing the historical lack of a true reverse body diode.
Transistors are the core of power electronics. However, the beneficial properties of wide bandgap devices present…
Transistors are the core of power electronics. However, the beneficial properties of wide bandgap devices present challenges for accurate…
Especially when renewable energies are used to supply the grid the use of power semiconductors becomes mandatory. One of…
Especially when renewable energies are used to supply the grid the use of power semiconductors becomes mandatory. One of the key questions in these…
Navitas Semiconductor and GigaDevice have launched a joint R&D lab to integrate Navitas’ GaNFast power ICs with…
Navitas Semiconductor and GigaDevice have launched a joint R&D lab to integrate Navitas’ GaNFast power ICs with GigaDevice’s GD32…
With options ranging from 22 V to 200 V, the radiation-hardened gate drivers can bolster power system efficiency for any…
With options ranging from 22 V to 200 V, the radiation-hardened gate drivers can bolster power system efficiency for any space mission.
SiC-engineered substrates offer significant benefits over conventional substrates by leveraging device performance thanks…
SiC-engineered substrates offer significant benefits over conventional substrates by leveraging device performance thanks to the use of a highly…
This article examines a new generation of SiC technology, focusing on holistic system efficiency, durability, and system cost.
This article examines a new generation of SiC technology, focusing on holistic system efficiency, durability, and system cost.
The newest voltage class of silicon carbide is enabling a shift in circuit topology for 1500 V-class inverters.
The newest voltage class of silicon carbide is enabling a shift in circuit topology for 1500 V-class inverters.
Facebook
Google
GitHub
Linkedin