The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost efficiency in USB-PD 3.1 adapters.
The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost efficiency in USB-PD 3.1 adapters.
Princeton researchers have found a way to deliver 10 times the power to processors with a compact but high-powered and…
Princeton researchers have found a way to deliver 10 times the power to processors with a compact but high-powered and efficient device.
Next-generation M2 processor from Apple targets improved power and performance for MacBook laptops.
Next-generation M2 processor from Apple targets improved power and performance for MacBook laptops.
Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using…
Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using silicon MOSFETs and IGBTs.…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…
One way to tell when a new technology has passed the tipping point of adoption is by the voices advocating the status…
One way to tell when a new technology has passed the tipping point of adoption is by the voices advocating the status quo. The more conservative…
ROHM’s 4th generation SiC MOSFETs offer improved characteristics compared to the older generation, and at lower prices.…
ROHM’s 4th generation SiC MOSFETs offer improved characteristics compared to the older generation, and at lower prices. Several applications in…
The recently launched 1200 V CoolSiC™ MOSFET M1H comes with a variety of new features and improvements from which the…
The recently launched 1200 V CoolSiC™ MOSFET M1H comes with a variety of new features and improvements from which the targeted applications will…
The ChiP (converter housed in package) fabrication facility will produce power modules in the United States using process…
The ChiP (converter housed in package) fabrication facility will produce power modules in the United States using process steps analogous to…
ST’s STPOWER MDmesh M9 and DM9 series feature N-channel super-junction multi-drain silicon power MOSFETs that will…
ST’s STPOWER MDmesh M9 and DM9 series feature N-channel super-junction multi-drain silicon power MOSFETs that will offer what ST says are the…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
Researchers earlier developed an energy storage system that captures sunlight and stores it for up to 18 years. They have…
Researchers earlier developed an energy storage system that captures sunlight and stores it for up to 18 years. They have now succeeded in creating…
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power…
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power factor correction (PFC).
Introduced March 2 at the UK’s Future Propulsion Conference 2022 (FPC2022), the inverter delivers 350 kW peak and 250…
Introduced March 2 at the UK’s Future Propulsion Conference 2022 (FPC2022), the inverter delivers 350 kW peak and 250 kW continuous for powering…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended…
The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended range, lower battery…
ST’s latest-generation silicon-carbide (SiC) power devices extend leadership in performance and reliability for…
ST’s latest-generation silicon-carbide (SiC) power devices extend leadership in performance and reliability for…
Learn about the applications of WBG based semiconductor devices specifically in automotive applications.
Learn about the applications of WBG based semiconductor devices specifically in automotive applications.
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