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High Performance 1 kW per Phase 48 V/12 V Converter Using GaN ePower Stage

High Performance 1 kW per Phase 48 V/12 V Converter Using GaN ePower Stage

How integrated GaN technology drives superior performance, simpler design, and reduced cost in 48 V/12 V automotive mild hybrid applications.


Lowest On-resistance SiC FETs Offer Rugged Short-Circuit Performance

Lowest On-resistance SiC FETs Offer Rugged Short-Circuit Performance

The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended range, lower battery…


II-VI Inks a Three-Year Technology Access Agreement with GE Research

II-VI Inks a Three-Year Technology Access Agreement with GE Research

The technology access agreement (TAA) allows II-VI to gain access to GE’s wide-ranging silicon carbide (SiC) module technology and to its teams…


News Mar 01, 2022 by Gary Elinoff
How to Hack your DC/DC Converter – Part 1

How to Hack your DC/DC Converter – Part 1

A ‘hack’ is a clever or elegant solution that uses something for a purpose for which it was not originally intended, usually for fun, but also…


Eggtronic Unveils a New Demo Board Aimed at Streamlining the Design of Compact, Efficient 35 W Adapters and Chargers

Eggtronic Unveils a New Demo Board Aimed at Streamlining the Design of Compact, Efficient 35 W Adapters and Chargers

The new board employs the company’s proprietary EcoVoltas QuarEgg+ technology, and can be specified with either a GaN or Silicon FET.


More Power by RC-IGBT Technology

More Power by RC-IGBT Technology

Fuji Electric introduces a new product in a well-known package to increase the output power of IGBT modules by applying “RC-IBGT” (RC stands…


EPC Space Expands its Rad-Hard GaN Offerings With New Demo Boards

EPC Space Expands its Rad-Hard GaN Offerings With New Demo Boards

The five easy-to-use demonstration boards will allow engineers to more quickly exploit the capabilities of radiation-hardened (RH) gallium nitride…


Power Integrations Claims its New AEC-Q100 Qualified Switcher ICs Are First to Incorporate a SiC MOSFET

Power Integrations Claims its New AEC-Q100 Qualified Switcher ICs Are First to Incorporate a SiC MOSFET

The devices can efficiently deliver power to battery and fuel-cell passenger EVs, in addition to electric buses and trucks.


Power MOSFET Package Enables Innovative Source-Down

Power MOSFET Package Enables Innovative Source-Down

New OptiMOS™ power MOSFET package enables innovative Source-Down technology for PQFN 3.3 x 3.3 mm2 in 25 V to 100 V variants.


Automotive Buck/Reverse-Boost Converter with GaN for Efficient 48 V Power Distribution

Automotive Buck/Reverse-Boost Converter with GaN for Efficient 48 V Power Distribution

Demonstrating the design of a bi-directional DC-DC converter for automotive 48 V power distribution, showing how GaN technology is a powerful…


ST’s Silicon-Carbide Power Devices for E-Mobility and Energy-Efficient Industry

ST’s Silicon-Carbide Power Devices for E-Mobility and Energy-Efficient Industry

ST’s latest-generation silicon-carbide (SiC) power devices extend leadership in performance and reliability for…


hofer powertrain and VisIC Technologies develop 3-Level 800V GaN inverter

hofer powertrain and VisIC Technologies develop 3-Level 800V GaN inverter

hofer powertrain, a globally leading automotive powertrain technology company, and VisIC Technologies Ltd., a global leader in gallium nitride…


ROHM’s New Compact Surface Mount 45W Output AC/DC Converter ICs: Equipped with Integrated High Voltage SJ MOSFET

ROHM’s New Compact Surface Mount 45W Output AC/DC Converter ICs: Equipped with Integrated High Voltage SJ MOSFET

Fly-back converter ICs maximizing performance, reducing system cost and increasing reliability for industrial and consumer power supply solutions.


Solitron Devices Announces 1200V, 100A Power Modules

Solitron Devices Announces 1200V, 100A Power Modules

Solitron Devices is pleased to announce the introduction of the SD11906, SD11907, SD11956 and SD11957 1200V Silicon Carbide (SiC) Half Bridge…


Innoscience Places Big Bet on GaN-on-Si

Innoscience Places Big Bet on GaN-on-Si

Innoscience Technology is hoping to make big waves in the Gallium Nitride (GaN) industry by fabricating 200mm (8") GaN-on-Si wafers and…


News Feb 06, 2022 by Dale Wilson
Benefits of Using the 1700V and 3300V High Power Modules for Traction Applications

Benefits of Using the 1700V and 3300V High Power Modules for Traction Applications

In this article we present the results of analysis of current requirements of traction converters powered by 750 V DC and 1500 V DC. Based on these…


Collaboration on SiC Power Stack Reference Design

Collaboration on SiC Power Stack Reference Design

E-mobility and renewable energy systems require power management solutions that drive performance and cost efficiencies in addition to speeding up…


Wide Bandgap Devices for Automotive Applications

Wide Bandgap Devices for Automotive Applications

Learn about the applications of WBG based semiconductor devices specifically in automotive applications.


Applications of Wide Bandgap Devices

Applications of Wide Bandgap Devices

Some applications include string inverters, wind power, auxiliary power, hot swap technologies, traction inverters, EV charging and more.


SiC and GaN-based Wide Bandgap Devices for Power Conversion

SiC and GaN-based Wide Bandgap Devices for Power Conversion

Silicon has been the semiconductor material that has been used the most in power electronics applications. The maturity of the silicon…