40 V eGaN® FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions Now Available from EPC
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than MOSFETs for high-performance, space-constrained applications.
Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2067 (1.3 mΩ typical, 40 V) eGaN FET. The EPC2067 is ideal for applications with demanding requirements for high power density performance including 48 V – 54 V input servers.
Image courtesy of EPC
Lower gate charges and zero reverse recovery losses enable high-frequency operation of 1 MHz, and beyond, at high efficiency in a tiny 9.3 mm2 footprint for state-of-the-art power density.
According to Alex Lidow, EPC’s co-founder and CEO, “The EPC2067 makes the ideal switch for the secondary side of the LLC DC-DC converter from 40 V – 60 V to 12 V. This 40-volt device offers improved performance and cost compared with previous-generation 40 V GaN FETs allowing designers to economically improve efficiency and power density.”
Development Board The EPC90138 development board is a 40 V maximum device voltage, 40 A maximum output current, half-bridge with onboard gate drives, featuring the EPC2067 eGaN FETs. This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2067
