Infineon Expands Power and Automotive Products Portfolio Across Multiple Technologies

To address market demands for better and more efficient power conversion in e-mobility, and other space-constrained applications, Infineon Technologies has announced the release of their 650 V CoolSiC MOSFET in a TO leadless (TOLL) package. 

CoolSiC 650 V MOSFET in TO-leadless packaging. Image used courtesy of Infineon

 

The company is also announcing industrial and automotive grade variants of the CoolMOS S7 family of high-voltage superjunction (SJ) MOSFETs and an upgrade to their 62 mm half-bridge power module using 1200 V TRENCHSTOP IGBT7 devices.

Targeted for applications that place a premium on size, weight, and efficiency, the CoolSiC switches in TOLL packaging will allow for operation at higher frequencies with smaller form factors and more power density.   

The high-voltage superjunction MOSFET model extensions will be targeted for static switching applications, while the higher current IGBT7 modules will be available for use in industrial and fixed power applications like solar inverters, EV supply equipment (EVSE), and energy storage systems (ESS).   

 

Higher Power Densities with TO-Leadless Packaging 

Compared with other package options, the JEDEC-qualified TO-Leadless (TOLL) package features low parasitic inductances that allow higher switching frequencies. Higher frequencies mean reduced switching losses and a smaller solution form factor due to reduced passive component sizes. 

 

TO-leadless packaging for high-power applications. Image used courtesy of Infineon

 

The capabilities of the new package option mesh well with some of the inherent advantages of silicon carbide (SiC) technology - faster switching speeds, better conduction efficiency, and improved thermal performance. All are geared toward achieving the highest power density.

According to Infineon, TOLL packaging is designed to accommodate currents up to 300 A; the small footprint and reduced height offer a 60% space saving over similar rated solutions.

The new CoolSiC MOSFET 650 V in TOLL packaging will be available in models with on resistances (RDS(ON)) ranging from 22 to 260 mΩ.

 

Minimizing Conduction Losses in Static Switching Applications

The design priorities for static switching applications (battery protection, solid state relays, lighting control, etc.) are reducing conduction losses and dissipating the associated heat.

 

Quadruple DPAK packaging for CoolMOS S7. Image used courtesy of Infineon

 

The new industrial and automotive grade variants of the 600 V CoolMOS S7 superjunction (SJ) power switches will be available in both top (TS) side and bottom side cooling (BSC) Quadruple DPAK (QDPAK) packages with on-resistances as low as 10 mΩ, and supporting nominal rated drain currents up to 50 A.

 

Comparing silicon, SiC, and GaN for power applications. Image used courtesy of Infineon

 

While silicon power technologies, like Infineon’s superjunction MOSFETs, may lack some of the high speed and voltage performance of newer SiC or GaN (gallium nitride) solutions, silicon substrate devices still offer the best value for many power system designs due to their combination of performance and cost efficiency.    

 

Higher Rated IGBT Module for Industrial Power

Infineon is upgrading its 62 mm half-bridge power module portfolio with new 1200 V TRENCHSTOP IGBT7 chips. Compared with the prior IGBT4 variants, IGBT7 has reduced static losses, an ideal characteristic for lower-frequency industrial drive applications that are more sensitive to conduction losses.

 

62 mm TRENCHSTOP IGBT7 half-bridge power module. Image used courtesy of Infineon

 

With the upgrade to IGBT7, the 62 mm module will have its maximum current rating increased to 800 A. The new IGBT module is designed for raw power conversion performance in lower frequency, fixed industrial applications where solution size is not the highest priority – backup power systems, energy storage, welding, and renewable energy production.