The Fraunhofer Institute for Solar Energy Systems (ISE) has developed a highly compact inverter for direct feeding into the medium-voltage grid.
The Fraunhofer Institute for Solar Energy Systems (ISE) has developed a highly compact inverter for direct feeding into the medium-voltage grid.
The tiny new smart protection switch operates over a 3.4 to 23-volt range and features a 36mΩ ON-Resistance
The tiny new smart protection switch operates over a 3.4 to 23-volt range and features a 36mΩ ON-Resistance
Fuji Electric has started mass production of its HPnC module outfitted with a 7th generation X-Series IGBT, targeting the…
Fuji Electric has started mass production of its HPnC module outfitted with a 7th generation X-Series IGBT, targeting the railway market.
This article highlights Infineon Technologies AG 650 V CoolSiC™ Hybrid IGBT portfolio in a discrete package with 650 V…
This article highlights Infineon Technologies AG 650 V CoolSiC™ Hybrid IGBT portfolio in a discrete package with 650 V blocking voltage.
The new semiconductor is aimed at ultra-thin Point-of-Load Converters, USB-C Battery Chargers and other space-constrained…
The new semiconductor is aimed at ultra-thin Point-of-Load Converters, USB-C Battery Chargers and other space-constrained applications
Based on Efficient Power Conversion’s EGaN FETs, the non-isolated DC/DC power modules provide up to 300 watts of output power.
Based on Efficient Power Conversion’s EGaN FETs, the non-isolated DC/DC power modules provide up to 300 watts of output power.
The GS-EVB-HB-66508B-RN and the GS-EVB-HB-66516T-RN are half bridge daughter cards that can handle 3kW and 6kW, respectively
The GS-EVB-HB-66508B-RN and the GS-EVB-HB-66516T-RN are half bridge daughter cards that can handle 3kW and 6kW, respectively
MinDCet has implemented GaN Systems’ enhancement-mode, (e-mode) gallium-nitride (GaN) high-electron-mobility…
MinDCet has implemented GaN Systems’ enhancement-mode, (e-mode) gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) into…
By implementing Efficient Power Conversion’s (EPC) Gallium-Nitride (GaN) transistors, BrightLoop Converters’ DC-DC…
By implementing Efficient Power Conversion’s (EPC) Gallium-Nitride (GaN) transistors, BrightLoop Converters’ DC-DC Buck Converter looks to…
The 150V devices, featuring high safe operating areas and low RDS(ON)s, are aimed at challenging telecomm hot swap tasks
The 150V devices, featuring high safe operating areas and low RDS(ON)s, are aimed at challenging telecomm hot swap tasks
This article highlights STMicroelectronics’ MasterGaN® platform, in which MasterGaN2 is the first in the new family…
This article highlights STMicroelectronics’ MasterGaN® platform, in which MasterGaN2 is the first in the new family to contain two asymmetric…
Philips and GaN Systems have created a new fast-charging, gallium nitride (GaN), power charger that is able to withstand…
Philips and GaN Systems have created a new fast-charging, gallium nitride (GaN), power charger that is able to withstand 650V operating voltage…
Available in EP7 packages, the new units feature an input voltage range from 9 to 36 volts, with a saturation current of 4.5 amps.
Available in EP7 packages, the new units feature an input voltage range from 9 to 36 volts, with a saturation current of 4.5 amps.
Pandemic or no Pandemic, 2020 was a big year for electrical engineering. Let’s look back at the products that defined…
Pandemic or no Pandemic, 2020 was a big year for electrical engineering. Let’s look back at the products that defined this year, and the…
The line between the nascent electric vehicle industry and the electronics world is getting ever more blurred, and…
The line between the nascent electric vehicle industry and the electronics world is getting ever more blurred, and nowhere is this more prevalent…
Transphorm’s fifth generation of gallium nitride (GaN) FET outperforms standard Silicon carbide (SiC) solutions in…
Transphorm’s fifth generation of gallium nitride (GaN) FET outperforms standard Silicon carbide (SiC) solutions in power, design flexibility, and…
EPC introduces the 40 V, 3 milliohm EPC2055 eGaN FET, offering designers a device that is smaller, more efficient, and…
EPC introduces the 40 V, 3 milliohm EPC2055 eGaN FET, offering designers a device that is smaller, more efficient, and more reliable than currently…
Performance tests show it can charge three digital devices simultaneously while also supplying power to three 220V…
Performance tests show it can charge three digital devices simultaneously while also supplying power to three 220V devices, such as speakers, TVs,…
This article highlights MinDCet GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN…
This article highlights MinDCet GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN gate driver and two GaN…
The PA is internally matched and requires no additional external RF components, enabling designers and system integrators…
The PA is internally matched and requires no additional external RF components, enabling designers and system integrators to maximize design by…
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