This article highlights EiceDRIVER™ portfolio with a 1200 V three-phase gate driver that is based on the company’s…
This article highlights EiceDRIVER™ portfolio with a 1200 V three-phase gate driver that is based on the company’s unique silicon-on-insulator…
Dual-MOSFET devices simplify automotive solenoid control circuits by saving space, reducing component count and improving…
Dual-MOSFET devices simplify automotive solenoid control circuits by saving space, reducing component count and improving reliability.
The new kits are designed to give designers a first hand look at the benefits of gallium nitride semiconductors
The new kits are designed to give designers a first hand look at the benefits of gallium nitride semiconductors
AEC-Q101 qualified single and dual N-channel trench MOSFETs feature 175° T j rating, wettable flank PDFN package and…
AEC-Q101 qualified single and dual N-channel trench MOSFETs feature 175° T j rating, wettable flank PDFN package and 100% compliance with…
GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration…
GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration with ON Semiconductor.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.
Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.
The compact 5 by 6 mm device is said to be the first of its type to feature AEC-Q101 qualification
The compact 5 by 6 mm device is said to be the first of its type to feature AEC-Q101 qualification
The new unit leads the pack with greater reliability and efficiency at a lower cost point and at a smaller size
The new unit leads the pack with greater reliability and efficiency at a lower cost point and at a smaller size
The new Super Junction MOSFETS, feature a 115 mm2 footprint, fully 23% smaller than that of D2PAK devices
The new Super Junction MOSFETS, feature a 115 mm2 footprint, fully 23% smaller than that of D2PAK devices
The new unit is complete in a single TO-263 package, replacing the multiple discrete components otherwise required
The new unit is complete in a single TO-263 package, replacing the multiple discrete components otherwise required
This article highlights Diodes Incorporated two highly integrated synchronous buck converters that simplify circuit…
This article highlights Diodes Incorporated two highly integrated synchronous buck converters that simplify circuit design in automotive power…
The partnership between Microchip and Efficient Power Conversion (EPC) has yielded two 250W, 48V DC-DC solutions for…
The partnership between Microchip and Efficient Power Conversion (EPC) has yielded two 250W, 48V DC-DC solutions for ultra-thin laptops, displays,…
The 65 watt DC/DC converters can switch at 2MHz, operate with a DC input ranging up to 24 volts, and are offered in 3mm X…
The 65 watt DC/DC converters can switch at 2MHz, operate with a DC input ranging up to 24 volts, and are offered in 3mm X 3mm QFN packages
The collaboration between Silicon Labs and Teledyne Defense Electronics has delivered high-reliability (HiRel) isolation…
The collaboration between Silicon Labs and Teledyne Defense Electronics has delivered high-reliability (HiRel) isolation technology to space,…
This article highlights Mitsubishi Electric Corporation LV100 T-series IGBT modules for industrial application that will…
This article highlights Mitsubishi Electric Corporation LV100 T-series IGBT modules for industrial application that will be available for 1200V and…
Wettable flanks assure easy optical inspection, improved heat dissipation and better mounting reliability
Wettable flanks assure easy optical inspection, improved heat dissipation and better mounting reliability
This article highlights EPC 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more…
This article highlights EPC 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more efficient, more reliable,…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active power management, and…
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