MinDCet and GaN Systems Partner on GaN-Based Evaluation Kit
MinDCet has implemented GaN Systems’ enhancement-mode, (e-mode) gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) into next-generation GaN-based Half-Bridge evaluation kit for designing step-down converters, boost converters, and class D audio applications
MinDCet: A Power Semiconductor Design House
In 2012, MinDCet was launched in hopes of creating integrated circuits (ICs) that were aimed at high-voltage ASIC designs. As of 2019, MinDCet has developed a capacitor-based measurement system into a single IC, the MDC901 GaN-based gate Driver. MinDCet’s MDC901 is a non-isolated 200V GaN gate driver with unprecedented gate drive strength that exceeds 9A/ Offers true floating programmable regulators, integrated charge pump, bootstrap diodes, and extensive diagnostics.
The evaluation kit provides protection for the GaN-based gate drivers by having programmable floating regulators to avoid overcharging. Image used courtesy of MinDCet.
This gate driver was combined with GaN Systems’ e-mode GaN-HEMTs to create a high-end, step down converter evaluation kit.
The GS61008P is able to provide high efficiency during power switching through easily controllable fall and rise times. Image used courtesy of GaN Systems.
GaN Systems are manufacturers known for the GaN-based HEMTs, which are enhanced, GaN-on-silicon power transistors that allow for high current, high voltage breakdown, and high switching frequencies. Through the years, GaN Systems was able to achieve low inductance and low thermal resistance in smaller footprints. This led to their patented design, the GS61008P, a bottom-side cooled transistor that is ideal for high power applications. This transistor is able to withstand reverse current with a zero reverse recovery loss during operation.
MinDCet was able to combine the DC901 gate driver with two GS61008P transistors from GaN Systems in order to establish a GaN-based step-down converter evaluation board (EVB) that enables power designers to complete out-of-box testing capabilities.
MinDCet’s GaN-Based Evaluation Kit
The Half-Bridge Evaluation kit which is composed of MinDCet MDC901 GaN gate driver and two GaN Systems GS61008P (E-Mode GaN HEMTs). Allows designers to develop power electronics in easy-to-use design-in GaN technology for 48V applications that include step-down converters, boost converters, and class D audio.
With the integration of the two GS61008P enhancement-mode GaN HEMTs, the evaluation board gives digital control to all internal/external dead-time control, programmable dead-time, and programmable gate voltage.
MinDCet’s EVB features a 100V input step-down converter that also provides a 30A output current. Image used courtesy of MinDCet.
The EVB allows designers to detect undervoltage with gate drive monitoring and temperature sensing. Design flexibility is presented to engineers through the ability to evaluate MinDCet’s MDC901 gate drivers at 200V in a half-bridge configuration. How does this help designers? Well, half-bridge designs are the most common approach to go from DC-to-AC conversion because the load current is able to flow in both directions. An important task for power designs such when driving an inductive load with an AC waveform, the output voltage for this IC is proportional to one half of the power supply.
Power designers will be able to evaluate at high-voltage applications since the new EVB can withstand 190V for testing and measurement in wide-bandgap instances. The kit is equipped with bus power cables, a heatsink, and a regulated 12V fan supply. Designers can expect to also receive hardware and software needed to reliably connect the board to an external power source.
MinDCet is a power semiconductor design house and eventually, they would’ve launched a similar EVB but it was only able to come to fruition thanks to GaN Systems’ HEMT transistors. There will be more to look forward to from this partnership, as both manufacturers look to address demanding issues within consumer electronics, data centers, power supplies, and renewable energy systems.
Leveraging extensive expertise in high-voltage and power ASIC design, we deliver tailored integrated circuits. Our solutions encompass the full development spectrum, working closely with our clients from conceptualization through to the low-to-medium volume production stage, backed by in-house production testing facilities and pre-production testing capabilities. The high quality development standards are affirmed in MinDCet’s ISO9001 certification.