New Industry Products

Efficient Power Conversion’s New 40V eGaN FET Sports an RDS(ON) of only 3 mΩ

February 04, 2021 by Gary Elinoff

The new semiconductor is aimed at ultra-thin Point-of-Load Converters, USB-C Battery Chargers and other space-constrained applications

Efficient Power Conversion’s (EPC) newly introduced EPC2055 takes up only a scant 3.8 mm2 of board space, yet handles a continuous 29 amps. This makes the high power density unit well suited for high power use cases where only very limited space is available.


The EPC2055
The EPC2055. Image Courtesy of EPC


The low-temperature coefficient of GaN and its high electron mobility mean that devices forged in this technology can enjoy very low RDS(ON) values. Its majority carrier diode and lateral device structure provide for zero QRR as well as for very low QG. These attributes combine to engender semiconductors that excel in applications that call for low on-time, high switching speeds and in those instances where on-state losses dominate.

As per Alex Lidow, EPC’s co-founder and CEO, “The EPC2055 is a very good example of the rapid evolution of GaN FET technology. This 40 volt device offers both smaller size and reduced parasitics compared with previous-generation 40 V GaN FETs and at a lower cost; thus, offering designers both improved performance and cost savings.” 


Enhanced Mode GaN

EPC makes a wide range of enhancement mode, or normally-off GaN devices. We have previously covered:

As well as a very interesting category of radiation-hardened eGaN’s


Device Maximums

In addition to a continuous 29 amps drain current at 25℃, the EPC2055 can tolerate 300µs ID pulses of up to 161 amps at that temperature. The 40 volt device can handle up to 10,000 5 ms pulses of 48 volts at a temperature of 150℃

Gate to source voltages can range between -4 and 6 volts, maximum.


Static Conditions

  Conditions  Typical Value
IDSS: Drain-to-Source leakage VGS = 0V, VDS = 32V 0.01 mA
IGSS: Gate-to-Source Forward Leakage VGS = 5V 0.01 mA
IGSS: Gate-to-Source Forward Leakage VGS = 5V TJ @ 125℃ 0.1 mA
IGSS: Gate-to-Source Reverse Leakage VGS = -4V 0.01 mA
VGS (TH): Gate Threshold Voltage VDS = VGS, ID = 7 mA 1.1 volts
VSD: Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V 1.9 volts


Dynamic Characteristics

          Conditions   Typical Value
CISS: Input Capacitance
 VDS = 20 Volts, VGS = 0 Volts
     841 pF
CRSS: Reverse Transfer Capacitance      8.8 pF
COSS: Output Capacitance      408 pF
QG: Total gate Charge

 VDS = 20 Volts, VGS = 5 Volts, 

 ID = 15 Amps
     6.6 nC
QOSS: Output Charge  VDS = 20 Volts, VGS = 0 Volts       13 nC


  • Unless otherwise noted, static and dynamic conditions are for 25℃.
  • Complete details available from the datasheet.



  • DC-DC Converters
  • Point-of-Load Converters
  • Sync rectification for DC-DC and AC-DC
  • Industrial Automation 
  • 12 to 24 volt motor drives
  • Lidar
  • LED lighting
  • Class D Audio 
  • USB-C battery chargers
  • Ultra-thin POL converters


Physical Concerns

  • The EPC2055’s is available in passivated die form with solder bars. The die size is 2.5 by 1.5mm
  • The device operates over a temperature range -40 to +150 ℃


Environmental Concerns

  • RoHS 6/6
  • Halogen Free


Getting to Market Faster

The is available to assist engineers in the process of evaluating the EPC2055


The EPC90132 development board
The EPC90132 development board. Image courtesy of EPC


The unit is configured as a half-bridge with on-board gate drivers. Maximum output is 40 volts and 25 amps.