BrightLoop Converters Utilizes EPC’s eGaN Technology to Improve Performance for eMotorsport Vehicles
By implementing Efficient Power Conversion’s (EPC) Gallium-Nitride (GaN) transistors, BrightLoop Converters’ DC-DC Buck Converter looks to outperform silicon-based technology in supercars
EPC’s e-mode FET
EPC is known for its patented enhancement-mode (e-mode) GaN technology has now designed a power transistor for automation, particularly motorsports.
The EPC2029 is an 80V, 48A eGaN FET that enables high current in a game changing footprint. Devices that utilize this power component will be able to achieve higher switching frequencies, lower conduction losses, and gain a higher power density. EPC2029 produces a high electron mobility that makes it easier for devices to handle instances of high switching to deliver negligible power losses.
The EPC2029 is ideal for high speed DC-DC converters, automation, and synchronous rectification. Image used courtesy of EPC.
EPC’s GaN-based transistors allow engineers to have more design flexibility by offering a small footprint and eliminating the need for external components such as capacitors. The EPC2029 establishes a smaller on-resistance, footprint, and cost towards motor drives, industrial automation, and automotive power converters.
BrightLoop’s BB SP DC-DC Converter
BrightLoop Converters is a French manufacturer that differentiates itself in the power electronics industry by offering products that improve efficiency for devices in harsh environments.There are several different types of networks in a hybrid or electric vehicle that can be improved by integrating a robust solution that offers real-time controllability.
BrightLoop’s reversible DC-DC Buck Boost converter (BB SP) is ideal for 48V applications. However, this isn’t a standard DC-DC converter; it has a reversibility function which allows the device to transform a low-voltage input into a high-voltage output.
By implementing the EPC2029, BrightLoop was able to increase its converter switching frequency from 200kHz to 600kHz. The eGaN FET also was able to increase power density by a factor of 2, beating out conventional results brought on by silicon MOSFETs.
BrightLoop Converters ensures its products experience rigorous testing of performance during harsh temperature conditions through patented, highly accelerated stress screening. Image used courtesy of BrightLoop Converters.[a]
Partners in Power Design Innovation
DC-DC converters use high-voltage power from the main traction battery to power all the low-voltage electrical accessories, such as actuators, pumps, and motors. BrightLoop and EPC have worked together to create an efficient and lightweight solution that can be used in various automotive applications such as electric and hybrid vehicles.
The CEO of BrightLoop Converters, Florent Liffran shared his thoughts on forming a partnership with EPC, “BrightLoop Converters is excited to partner with EPC and to leverage their great expertise in GaN power transistors. Using EPC products has allowed us to design best-in-class solutions for automotive applications with converters that are drastically smaller and lighter than competition, such as the BB SP. We are proud to provide our customers with the best power conversion technologies on the market.”
Wolfram Krueger, EPC’s VP of Sales for EMEA added, “We are delighted to be working with BrightLoop Converters and are looking forward to working together on future applications.” We can expect more products to arise from this new partnership since EPC continues to develop smaller and highly efficient power components that will drive BrightLoop past the competition.
EPC is the leader in enhancement mode gallium nitride based power management devices and was the first to introduce enhancementmode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.