TI showcased what it calls the industry's first GaN IPM for compact, energy-efficient motors at PCIM 2024 in Germany.
TI showcased what it calls the industry's first GaN IPM for compact, energy-efficient motors at PCIM 2024 in Germany.
Teledyne’s GaN load switch is suitable for critical high-power applications requiring speed and efficiency.
Teledyne’s GaN load switch is suitable for critical high-power applications requiring speed and efficiency.
ROHM’s 100 V Schottky Barrier Diode uses a trench MOS structure to lower reverse recovery times, while Vishay and SemiQ…
ROHM’s 100 V Schottky Barrier Diode uses a trench MOS structure to lower reverse recovery times, while Vishay and SemiQ release IGBT and silicon…
Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the…
Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the solution size for 48 V and…
The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster,…
The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster, more compact, and more…
The company is demonstrating the new GaN power stages and DC-DC modules at APEC.
The company is demonstrating the new GaN power stages and DC-DC modules at APEC.
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
Central Semiconductor’s 650 V Super Junction N-Channel MOSFETs are designed to deliver power conversion efficiency in…
Central Semiconductor’s 650 V Super Junction N-Channel MOSFETs are designed to deliver power conversion efficiency in high-voltage,…
New gate driver circuits address the challenges of wide bandgap semiconductors to help these high-power devices harness…
New gate driver circuits address the challenges of wide bandgap semiconductors to help these high-power devices harness their potential.
Battery charger reference designs from Transphorm offer high power density at a competitive cost for two- and three-wheel…
Battery charger reference designs from Transphorm offer high power density at a competitive cost for two- and three-wheel electric vehicles using…
The company is expanding its presence in the wide bandgap semiconductor market with advancements in its FET and MOSFET…
The company is expanding its presence in the wide bandgap semiconductor market with advancements in its FET and MOSFET product lines.
Allegro Microsystems and Transphorm are joining forces to expand the application space for high-power gallium nitride…
Allegro Microsystems and Transphorm are joining forces to expand the application space for high-power gallium nitride circuits using the latest…
High-voltage devices from Power Integrations and Magnachip Semiconductor use the latest gallium nitride and silicon power…
High-voltage devices from Power Integrations and Magnachip Semiconductor use the latest gallium nitride and silicon power technologies and advanced…
FETs from Infineon, Transphorm, and ROHM feature innovative packaging that increases performance and efficiency.
FETs from Infineon, Transphorm, and ROHM feature innovative packaging that increases performance and efficiency.
New silicon field-effect transistor and gallium nitride power switches from Littelfuse, Transphorm, and Magnachip…
New silicon field-effect transistor and gallium nitride power switches from Littelfuse, Transphorm, and Magnachip Semiconductor deliver automotive…
In an interview with EE Power, GaN Systems CEO Jim Witham reveals significant upgrades to its GaN power platform,…
In an interview with EE Power, GaN Systems CEO Jim Witham reveals significant upgrades to its GaN power platform, including a 20 percent…
Cambridge GaN Devices has released the first-ever GaN devices with individual 2D barcoding to assist with die-level data…
Cambridge GaN Devices has released the first-ever GaN devices with individual 2D barcoding to assist with die-level data collection for process,…
Wide bandgap products from ROHM, STMicroelectronics, and Toshiba leverage the capabilities of silicon carbide and gallium…
Wide bandgap products from ROHM, STMicroelectronics, and Toshiba leverage the capabilities of silicon carbide and gallium nitride to meet key…
Navitas Semiconductor has released the GaN CRPS185 3,200 W Titanium Plus server power reference platform designed to…
Navitas Semiconductor has released the GaN CRPS185 3,200 W Titanium Plus server power reference platform designed to bring efficiency and high…
Nexperia has launched its first-ever insulated gate bipolar transistor (IGBT) device, expanding its portfolio of power…
Nexperia has launched its first-ever insulated gate bipolar transistor (IGBT) device, expanding its portfolio of power MOSFETs and offering…
Facebook
Google
GitHub
Linkedin