New components from GAIA, Infineon, Metis, ROHM, and TDK focus on improving power density, system safety, and integration across energy,…
New components from GAIA, Infineon, Metis, ROHM, and TDK focus on improving power density, system safety, and integration across energy,…
With options ranging from 22 V to 200 V, the radiation-hardened gate drivers can bolster power system efficiency for any…
With options ranging from 22 V to 200 V, the radiation-hardened gate drivers can bolster power system efficiency for any space mission.
The MCU family comes in Entry and Main Line products, giving designers a scalable range of performance and memory options.
The MCU family comes in Entry and Main Line products, giving designers a scalable range of performance and memory options.
Cambridge GaN Devices and Qorvo integrate high-performance microcontrollers with ICeGaN ICs to boost energy efficiency.
Cambridge GaN Devices and Qorvo integrate high-performance microcontrollers with ICeGaN ICs to boost energy efficiency.
Infineon, Toshiba, Nexperia, and Navitas have released FETs offering higher integration levels, smaller form factors, …
Infineon, Toshiba, Nexperia, and Navitas have released FETs offering higher integration levels, smaller form factors, and more power density.
Boston Semi Equipment’s Zeus gravity feed test handler doubles the platform’s high-voltage testing capability to an…
Boston Semi Equipment’s Zeus gravity feed test handler doubles the platform’s high-voltage testing capability to an industry-leading 24 kV peak…
Recent developments in DC-DC converters focus on improving power density, thermal management, and efficiency.
Recent developments in DC-DC converters focus on improving power density, thermal management, and efficiency.
The latest SiC and GaN devices offer superior performance for various applications, paving the way for the next wave of…
The latest SiC and GaN devices offer superior performance for various applications, paving the way for the next wave of technological advancements.
The series of power supply units, ranging from 3 kW to 12 kW, focuses on efficiency with the goal of decarbonizing AI…
The series of power supply units, ranging from 3 kW to 12 kW, focuses on efficiency with the goal of decarbonizing AI server racks.
TI showcased what it calls the industry's first GaN IPM for compact, energy-efficient motors at PCIM 2024 in Germany.
TI showcased what it calls the industry's first GaN IPM for compact, energy-efficient motors at PCIM 2024 in Germany.
Teledyne’s GaN load switch is suitable for critical high-power applications requiring speed and efficiency.
Teledyne’s GaN load switch is suitable for critical high-power applications requiring speed and efficiency.
ROHM’s 100 V Schottky Barrier Diode uses a trench MOS structure to lower reverse recovery times, while Vishay and SemiQ…
ROHM’s 100 V Schottky Barrier Diode uses a trench MOS structure to lower reverse recovery times, while Vishay and SemiQ release IGBT and silicon…
Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the…
Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the solution size for 48 V and…
The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster,…
The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster, more compact, and more…
The company is demonstrating the new GaN power stages and DC-DC modules at APEC.
The company is demonstrating the new GaN power stages and DC-DC modules at APEC.
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
Central Semiconductor’s 650 V Super Junction N-Channel MOSFETs are designed to deliver power conversion efficiency in…
Central Semiconductor’s 650 V Super Junction N-Channel MOSFETs are designed to deliver power conversion efficiency in high-voltage,…
New gate driver circuits address the challenges of wide bandgap semiconductors to help these high-power devices harness…
New gate driver circuits address the challenges of wide bandgap semiconductors to help these high-power devices harness their potential.
Battery charger reference designs from Transphorm offer high power density at a competitive cost for two- and three-wheel…
Battery charger reference designs from Transphorm offer high power density at a competitive cost for two- and three-wheel electric vehicles using…
The company is expanding its presence in the wide bandgap semiconductor market with advancements in its FET and MOSFET…
The company is expanding its presence in the wide bandgap semiconductor market with advancements in its FET and MOSFET product lines.
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