The ultra-high-voltage SiC devices are now sampling in power module, discrete, and KGD formats.
The ultra-high-voltage SiC devices are now sampling in power module, discrete, and KGD formats.
Rohm, Littelfuse, and Ideal Semiconductor each introduced high-performance MOSFETs.
Rohm, Littelfuse, and Ideal Semiconductor each introduced high-performance MOSFETs.
ROHM’s BD67871MWV-Z three-phase BLDC motor gate driver uses TriC3 technology to cut MOSFET heat generation while…
ROHM’s BD67871MWV-Z three-phase BLDC motor gate driver uses TriC3 technology to cut MOSFET heat generation while maintaining low EMI in 12 to 48…
The Gen-4 modules aim to increase current capability and extend e-mobility inverter lifetime.
The Gen-4 modules aim to increase current capability and extend e-mobility inverter lifetime.
EPC’s compact EPC91120 GaN motor inverter offers power, sensing, and control for robots, e-mobility, and drones.
EPC’s compact EPC91120 GaN motor inverter offers power, sensing, and control for robots, e-mobility, and drones.
The CMXBxxA Zener diode lineup also cuts leakage and simplifies upgrades for power line protection.
The CMXBxxA Zener diode lineup also cuts leakage and simplifies upgrades for power line protection.
VIPerGaN50W integrates high-voltage GaN technology and advanced control features to deliver silent, efficient power conversion.
VIPerGaN50W integrates high-voltage GaN technology and advanced control features to deliver silent, efficient power conversion.
Bel has launched 65 W GaN-based AC-DC power supplies with a 50% smaller footprint while boosting efficiency and reliability.
Bel has launched 65 W GaN-based AC-DC power supplies with a 50% smaller footprint while boosting efficiency and reliability.
High‑efficiency, high‑density GaN architecture aims to redefine server and AI data‑center power delivery.
High‑efficiency, high‑density GaN architecture aims to redefine server and AI data‑center power delivery.
The vertical GaN (vGaN) power semiconductors claim to boost performance and efficiency in data centers, EVs, and renewables.
The vertical GaN (vGaN) power semiconductors claim to boost performance and efficiency in data centers, EVs, and renewables.
The driver integrates adjustable negative bias and reduces external components in automotive power systems.
The driver integrates adjustable negative bias and reduces external components in automotive power systems.
The Evergreen Vento FCM33 delivers modular 33 kW shelves with over 95% efficiency for semiconductor and industrial DC…
The Evergreen Vento FCM33 delivers modular 33 kW shelves with over 95% efficiency for semiconductor and industrial DC power systems.
The dual-phase trans-inductance voltage regulator modules aim to bring compact, high-efficiency power to AI and HPC workloads
The dual-phase trans-inductance voltage regulator modules aim to bring compact, high-efficiency power to AI and HPC workloads
Nexperia, Toshiba, and Infineon have designed MOSFETs that offer different strategies in advancing high-power design.
Nexperia, Toshiba, and Infineon have designed MOSFETs that offer different strategies in advancing high-power design.
The new single-channel driver uses capacitive isolation to tighten control of Si/SiC MOSFETs and IGBTs in noisy power stages.
The new single-channel driver uses capacitive isolation to tighten control of Si/SiC MOSFETs and IGBTs in noisy power stages.
The 100 V MOSFETs in compact CCPAK1212 packaging cut conduction losses, save space, and boost performance in 48 V…
The 100 V MOSFETs in compact CCPAK1212 packaging cut conduction losses, save space, and boost performance in 48 V automotive applications.
The design features wide bandgap semiconductors in a full-bridge LLC with planar magnetics.
The design features wide bandgap semiconductors in a full-bridge LLC with planar magnetics.
Rohm’s DOT-247 SiC module combines two devices in one package, raising power density and cutting board size for…
Rohm’s DOT-247 SiC module combines two devices in one package, raising power density and cutting board size for inverters, UPS, and EV systems.
Infineon, Toshiba, and Rohm’s product releases and proven applications indicate continued growth in the high-power…
Infineon, Toshiba, and Rohm’s product releases and proven applications indicate continued growth in the high-power MOSFET market.
The CoolSiC G2 MOSFET variants expand cooling options and compact form factors to medium-power SMPS designs.
The CoolSiC G2 MOSFET variants expand cooling options and compact form factors to medium-power SMPS designs.
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