The company has launched five reference designs with its InnoSwitch3-AQ flyback ICs, targeting inverter power, battery replacement, and emergency…
The company has launched five reference designs with its InnoSwitch3-AQ flyback ICs, targeting inverter power, battery replacement, and emergency…
The gate driver features advanced safety compliance and performance.
The gate driver features advanced safety compliance and performance.
The latest devices from Microchip, Rohm, and Semi-Q offer enhanced radiation protection, increased operation range, lower…
The latest devices from Microchip, Rohm, and Semi-Q offer enhanced radiation protection, increased operation range, lower conduction losses, and…
With its compact heat dissipation design, the new modules are designed to "sets a new standard for onboard chargers."
With its compact heat dissipation design, the new modules are designed to "sets a new standard for onboard chargers."
The new device keeps the high-frequency switching benefits of GaN while addressing the historical lack of a true reverse…
The new device keeps the high-frequency switching benefits of GaN while addressing the historical lack of a true reverse body diode.
Navitas and Great Wall Power have launched a 2.5kW GaN-based DC-DC converter with record power density and efficiency,…
Navitas and Great Wall Power have launched a 2.5kW GaN-based DC-DC converter with record power density and efficiency, targeting AI data centers…
New components from GAIA, Infineon, Metis, ROHM, and TDK focus on improving power density, system safety, and integration…
New components from GAIA, Infineon, Metis, ROHM, and TDK focus on improving power density, system safety, and integration across energy,…
With options ranging from 22 V to 200 V, the radiation-hardened gate drivers can bolster power system efficiency for any…
With options ranging from 22 V to 200 V, the radiation-hardened gate drivers can bolster power system efficiency for any space mission.
TI’s hot-swap eFuse integrates needed components to handle high power demands, save space, and simplify design.
TI’s hot-swap eFuse integrates needed components to handle high power demands, save space, and simplify design.
The high-voltage MOSFETs offer better efficiency, thermal performance, and reliability with a smaller die and lower losses.
The high-voltage MOSFETs offer better efficiency, thermal performance, and reliability with a smaller die and lower losses.
Infineon’s isolated gate driver ICs support the latest IGBT and SiC technologies, improving efficiency, reliability,…
Infineon’s isolated gate driver ICs support the latest IGBT and SiC technologies, improving efficiency, reliability, and safety in EV powertrains.
The company's fourth generation of SiC MOSFETs comes with upgrades to reverse recovery transients and lower RDS(on).
The company's fourth generation of SiC MOSFETs comes with upgrades to reverse recovery transients and lower RDS(on).
The MCU family comes in Entry and Main Line products, giving designers a scalable range of performance and memory options.
The MCU family comes in Entry and Main Line products, giving designers a scalable range of performance and memory options.
Thanks to a new process, the two power FETs feature incredibly low on-resistance and high switching efficiency.
Thanks to a new process, the two power FETs feature incredibly low on-resistance and high switching efficiency.
ST prioritized key tenets of automotive design—safety, efficiency, and performance—in the new single-package PMIC.
ST prioritized key tenets of automotive design—safety, efficiency, and performance—in the new single-package PMIC.
The latest Schottky diodes can withstand higher voltages and provide enhanced insulation resistance.
The latest Schottky diodes can withstand higher voltages and provide enhanced insulation resistance.
Toshiba, Littelfuse, and Vishay have introduced MOSFET technologies to maximize efficiency without compromising reliability.
Toshiba, Littelfuse, and Vishay have introduced MOSFET technologies to maximize efficiency without compromising reliability.
The MOSFETs are targeted for automotive and industrial power electronics.
The MOSFETs are targeted for automotive and industrial power electronics.
Cambridge GaN Devices and Qorvo integrate high-performance microcontrollers with ICeGaN ICs to boost energy efficiency.
Cambridge GaN Devices and Qorvo integrate high-performance microcontrollers with ICeGaN ICs to boost energy efficiency.
Power converters from Vicor and Infineon can save space and reduce manufacturing costs in EVs, and address other automotive needs.
Power converters from Vicor and Infineon can save space and reduce manufacturing costs in EVs, and address other automotive needs.
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