GaAs power diodes are wide bandgap semiconductor devices that exhibit excellent performance at about 70% of the cost of Silicon Carbide (SiC). In a…
GaAs power diodes are wide bandgap semiconductor devices that exhibit excellent performance at about 70% of the cost of Silicon Carbide (SiC). In a…
Power efficiency is a key enabler of a greener future. This is particularly true for the industrial sector, where the…
Power efficiency is a key enabler of a greener future. This is particularly true for the industrial sector, where the demand for electrical energy…
When it comes to high-power applications with highest reliability requirements, HV-IGBTs in the famous std-type package…
When it comes to high-power applications with highest reliability requirements, HV-IGBTs in the famous std-type package are still the favorable…
Gallium nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as…
Gallium nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as smart device chargers all…
High performance devices supplemented with system solution support. In 2010, ROHM has introduced its first commercial SiC…
High performance devices supplemented with system solution support. In 2010, ROHM has introduced its first commercial SiC MOSFET into the power…
A new transistor, using photon manipulation instead of electronic signals, was created by an international research team…
A new transistor, using photon manipulation instead of electronic signals, was created by an international research team led by Skoltech and IBM.
The new demonstration board operates either as a 12V to 60V boost converter or as a 48V to 12V buck converter.
The new demonstration board operates either as a 12V to 60V boost converter or as a 48V to 12V buck converter.
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and…
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…
The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base…
The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base station applications where…
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and…
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…
Dynamic on-state resistance is critical for the reliable and stable operation of GaN power transistors. However, many…
Dynamic on-state resistance is critical for the reliable and stable operation of GaN power transistors. However, many engineers are struggling to…
Pre-Switch expands its operations with its new headquarters in San Jose and plans to accelerate the application of its…
Pre-Switch expands its operations with its new headquarters in San Jose and plans to accelerate the application of its AI-based technology to areas…
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.
The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.
ViSIC Technologies received $35 million in funding to expand its GaN-based product range for automotive applications.
ViSIC Technologies received $35 million in funding to expand its GaN-based product range for automotive applications.
The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.
The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.
This article examines the use of power semiconductors in a low voltage drive with the general architecture.
This article examines the use of power semiconductors in a low voltage drive with the general architecture.
For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium…
For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium nitride (GaN) based power…
Enhancements to the online power design tool make identifying optimal SiC FET design solutions even easier.
Enhancements to the online power design tool make identifying optimal SiC FET design solutions even easier.
Learn about the principles of operation of p-channel and n-channel enhancement-mode MOSFETs.
Learn about the principles of operation of p-channel and n-channel enhancement-mode MOSFETs.
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