The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard…
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended…
The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended range, lower battery…
Fly-back converter ICs maximizing performance, reducing system cost and increasing reliability for industrial and…
Fly-back converter ICs maximizing performance, reducing system cost and increasing reliability for industrial and consumer power supply solutions.
In this article we present the results of analysis of current requirements of traction converters powered by 750 V DC and…
In this article we present the results of analysis of current requirements of traction converters powered by 750 V DC and 1500 V DC. Based on these…
Learn about the applications of WBG based semiconductor devices specifically in automotive applications.
Learn about the applications of WBG based semiconductor devices specifically in automotive applications.
GaAs power diodes are wide bandgap semiconductor devices that exhibit excellent performance at about 70% of the cost of…
GaAs power diodes are wide bandgap semiconductor devices that exhibit excellent performance at about 70% of the cost of Silicon Carbide (SiC). In a…
Power efficiency is a key enabler of a greener future. This is particularly true for the industrial sector, where the…
Power efficiency is a key enabler of a greener future. This is particularly true for the industrial sector, where the demand for electrical energy…
When it comes to high-power applications with highest reliability requirements, HV-IGBTs in the famous std-type package…
When it comes to high-power applications with highest reliability requirements, HV-IGBTs in the famous std-type package are still the favorable…
Gallium nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as…
Gallium nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as smart device chargers all…
High performance devices supplemented with system solution support. In 2010, ROHM has introduced its first commercial SiC…
High performance devices supplemented with system solution support. In 2010, ROHM has introduced its first commercial SiC MOSFET into the power…
A new transistor, using photon manipulation instead of electronic signals, was created by an international research team…
A new transistor, using photon manipulation instead of electronic signals, was created by an international research team led by Skoltech and IBM.
The new demonstration board operates either as a 12V to 60V boost converter or as a 48V to 12V buck converter.
The new demonstration board operates either as a 12V to 60V boost converter or as a 48V to 12V buck converter.
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and…
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…
The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base…
The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base station applications where…
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and…
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…
Dynamic on-state resistance is critical for the reliable and stable operation of GaN power transistors. However, many…
Dynamic on-state resistance is critical for the reliable and stable operation of GaN power transistors. However, many engineers are struggling to…
Pre-Switch expands its operations with its new headquarters in San Jose and plans to accelerate the application of its…
Pre-Switch expands its operations with its new headquarters in San Jose and plans to accelerate the application of its AI-based technology to areas…
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
Facebook
Google
GitHub
Linkedin