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EPC’s 40V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions

EPC’s 40V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions

EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…


Ampleon Extends LDMOS Base Station and Multi-Carrier Line with 400W Rugged Doherty RF Power Transistor

Ampleon Extends LDMOS Base Station and Multi-Carrier Line with 400W Rugged Doherty RF Power Transistor

The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base station applications where…


40 V eGaN® FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions Now Available from EPC

40 V eGaN® FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions Now Available from EPC

EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…


Dynamic ON-Resistance Measurement Techniques for GaN Power Transistors

Dynamic ON-Resistance Measurement Techniques for GaN Power Transistors

Dynamic on-state resistance is critical for the reliable and stable operation of GaN power transistors. However, many engineers are struggling to…


Pre-Switch Moves to New Location, Implements Plans for Future Technology

Pre-Switch Moves to New Location, Implements Plans for Future Technology

Pre-Switch expands its operations with its new headquarters in San Jose and plans to accelerate the application of its AI-based technology to areas…


News Oct 13, 2021 by Stephanie Leonida
Stackpole Enhances High Voltage Chip Resistor Tolerances and TCR Values

Stackpole Enhances High Voltage Chip Resistor Tolerances and TCR Values

HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.


Efficient Power Conversion (EPC) Debuts a 1.6 mΩ, 40 V eGaN FET

Efficient Power Conversion (EPC) Debuts a 1.6 mΩ, 40 V eGaN FET

The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.


VIsIC Technologies Raise Funds for GaN-based Automotive Applications

VIsIC Technologies Raise Funds for GaN-based Automotive Applications

ViSIC Technologies received $35 million in funding to expand its GaN-based product range for automotive applications.


News Sep 20, 2021 by Stephanie Leonida
UnitedSiC Debuts a 750V SiC Power FET with a 6mohm RDS(ON)

UnitedSiC Debuts a 750V SiC Power FET with a 6mohm RDS(ON)

The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.


Power Semiconductor Modules to Support Lower Voltages

Power Semiconductor Modules to Support Lower Voltages

This article examines the use of power semiconductors in a low voltage drive with the general architecture.


Lenovo and Navitas Launch a 130W Fast-Charging Power Adapter for High-Power Devices

Lenovo and Navitas Launch a 130W Fast-Charging Power Adapter for High-Power Devices

For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium nitride (GaN) based power…


UnitedSiC Launches FET-Jet Calculator v2

UnitedSiC Launches FET-Jet Calculator v2

Enhancements to the online power design tool make identifying optimal SiC FET design solutions even easier.


What are Enhancement-mode MOSFETs?

What are Enhancement-mode MOSFETs?

Learn about the principles of operation of p-channel and n-channel enhancement-mode MOSFETs.


Intelligent Power Amplifier Module Based on GaN FETs

Intelligent Power Amplifier Module Based on GaN FETs

Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the switching converters with very…


Tagore Introduces 650V GaN Power IC, Comprising GaN Power FET with Monolithically Integrated Driver

Tagore Introduces 650V GaN Power IC, Comprising GaN Power FET with Monolithically Integrated Driver

Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC in a compact 22 pin, 5mm…


Dialog Semiconductor Debuts ZVS Chipset for High Power Density PSUs

Dialog Semiconductor Debuts ZVS Chipset for High Power Density PSUs

The new chipset will enable power supply units (PSU) of 100+ watts that are 30-50% smaller than those now available.


Understanding the Differences Between the N-channel and P-channel Field-effect Transistors (FETs)

Understanding the Differences Between the N-channel and P-channel Field-effect Transistors (FETs)

Learn about the principles of and the operation of the field-effect transistor.


Eggtronic Releases E2Watt Wireless Power Supply Technology for High Power Applications

Eggtronic Releases E2Watt Wireless Power Supply Technology for High Power Applications

Power electronics manufacturer Eggtronic recently announced a new AC wireless power hybrid technology.


Customized Current Sensors Enable High Power Density Electric Vehicle Inverters

Customized Current Sensors Enable High Power Density Electric Vehicle Inverters

The demand for high power density converters in EVs requires further integration of sensors within power electronics.


Regulated High-Voltage DC-DC Converters For Analytical, Semiconductor And Detector Applications

Regulated High-Voltage DC-DC Converters For Analytical, Semiconductor And Detector Applications