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Efficient Power Conversion (EPC) Debuts a 1.6 mΩ, 40 V eGaN FET

Efficient Power Conversion (EPC) Debuts a 1.6 mΩ, 40 V eGaN FET

The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.


VIsIC Technologies Raise Funds for GaN-based Automotive Applications

VIsIC Technologies Raise Funds for GaN-based Automotive Applications

ViSIC Technologies received $35 million in funding to expand its GaN-based product range for automotive applications.


News Sep 20, 2021 by Stephanie Leonida
UnitedSiC Debuts a 750V SiC Power FET with a 6mohm RDS(ON)

UnitedSiC Debuts a 750V SiC Power FET with a 6mohm RDS(ON)

The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.


Power Semiconductor Modules to Support Lower Voltages

Power Semiconductor Modules to Support Lower Voltages

This article examines the use of power semiconductors in a low voltage drive with the general architecture.


Lenovo and Navitas Launch a 130W Fast-Charging Power Adapter for High-Power Devices

Lenovo and Navitas Launch a 130W Fast-Charging Power Adapter for High-Power Devices

For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium nitride (GaN) based power…


UnitedSiC Launches FET-Jet Calculator v2

UnitedSiC Launches FET-Jet Calculator v2

Enhancements to the online power design tool make identifying optimal SiC FET design solutions even easier.


What are Enhancement-mode MOSFETs?

What are Enhancement-mode MOSFETs?

Learn about the principles of operation of p-channel and n-channel enhancement-mode MOSFETs.


Intelligent Power Amplifier Module Based on GaN FETs

Intelligent Power Amplifier Module Based on GaN FETs

Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the switching converters with very…


Tagore Introduces 650V GaN Power IC, Comprising GaN Power FET with Monolithically Integrated Driver

Tagore Introduces 650V GaN Power IC, Comprising GaN Power FET with Monolithically Integrated Driver

Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC in a compact 22 pin, 5mm…


Dialog Semiconductor Debuts ZVS Chipset for High Power Density PSUs

Dialog Semiconductor Debuts ZVS Chipset for High Power Density PSUs

The new chipset will enable power supply units (PSU) of 100+ watts that are 30-50% smaller than those now available.


Understanding the Differences Between the N-channel and P-channel Field-effect Transistors (FETs)

Understanding the Differences Between the N-channel and P-channel Field-effect Transistors (FETs)

Learn about the principles of and the operation of the field-effect transistor.


Eggtronic Releases E2Watt Wireless Power Supply Technology for High Power Applications

Eggtronic Releases E2Watt Wireless Power Supply Technology for High Power Applications

Power electronics manufacturer Eggtronic recently announced a new AC wireless power hybrid technology.


Customized Current Sensors Enable High Power Density Electric Vehicle Inverters

Customized Current Sensors Enable High Power Density Electric Vehicle Inverters

The demand for high power density converters in EVs requires further integration of sensors within power electronics.


Regulated High-Voltage DC-DC Converters For Analytical, Semiconductor And Detector Applications

Regulated High-Voltage DC-DC Converters For Analytical, Semiconductor And Detector Applications

EPC Debuts a Radiation-Hardened eGaN FET for Tough Environments

EPC Debuts a Radiation-Hardened eGaN FET for Tough Environments

Efficient Power Conversion’s (EPC) new enhancement-mode gallium nitride (eGaN) FET is primed for space based applications


EPC Expands High-Performance eGaN FET Product Family with Latest 80V and 200V Offerings

EPC Expands High-Performance eGaN FET Product Family with Latest 80V and 200V Offerings

This article highlights EPC EPC2065 and EPC2054 eGaN FETs that are higher performing, smaller, more thermally efficient, and at a comparable cost.


Testing Cascode Gallium Nitride FETs

Testing Cascode Gallium Nitride FETs

One popular GaN device type is the Cascode GaN FET, which provides even more difficult challenges with its oscillation-prone device behavior. In…


Murata’s 2W Bipolar Output SMT DC-DC Converters Address High-Voltage Gate Driver Applications

Murata’s 2W Bipolar Output SMT DC-DC Converters Address High-Voltage Gate Driver Applications

This article highlights Murata MGJ2 DC-DC converters exhibit an ultra-low isolation capacitance of just 3pF (typical).


EPC’s 1kW, 48V to 12V LLC Power Conversion Demonstration Board Delivers High Power Density

EPC’s 1kW, 48V to 12V LLC Power Conversion Demonstration Board Delivers High Power Density

Delivering the power of a quarter-brick in the size of an eighth brick, the EPC9149 uses eGaN® FETs switching at 1 MHz for extreme power density…


Self-Powered Modules for Measurement and Control in Medium Voltage Power Electronics

Self-Powered Modules for Measurement and Control in Medium Voltage Power Electronics

Future Medium Voltage Power Electronics solutions for measurement and control require a new approach that increases simplicity, reliability and…