The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.
The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.
ViSIC Technologies received $35 million in funding to expand its GaN-based product range for automotive applications.
ViSIC Technologies received $35 million in funding to expand its GaN-based product range for automotive applications.
The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.
The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.
This article examines the use of power semiconductors in a low voltage drive with the general architecture.
This article examines the use of power semiconductors in a low voltage drive with the general architecture.
For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium…
For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium nitride (GaN) based power…
Enhancements to the online power design tool make identifying optimal SiC FET design solutions even easier.
Enhancements to the online power design tool make identifying optimal SiC FET design solutions even easier.
Learn about the principles of operation of p-channel and n-channel enhancement-mode MOSFETs.
Learn about the principles of operation of p-channel and n-channel enhancement-mode MOSFETs.
Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the…
Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the switching converters with very…
Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC…
Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC in a compact 22 pin, 5mm…
The new chipset will enable power supply units (PSU) of 100+ watts that are 30-50% smaller than those now available.
The new chipset will enable power supply units (PSU) of 100+ watts that are 30-50% smaller than those now available.
Learn about the principles of and the operation of the field-effect transistor.
Learn about the principles of and the operation of the field-effect transistor.
Power electronics manufacturer Eggtronic recently announced a new AC wireless power hybrid technology.
Power electronics manufacturer Eggtronic recently announced a new AC wireless power hybrid technology.
The demand for high power density converters in EVs requires further integration of sensors within power electronics.
The demand for high power density converters in EVs requires further integration of sensors within power electronics.
Efficient Power Conversion’s (EPC) new enhancement-mode gallium nitride (eGaN) FET is primed for space based applications
Efficient Power Conversion’s (EPC) new enhancement-mode gallium nitride (eGaN) FET is primed for space based applications
This article highlights EPC EPC2065 and EPC2054 eGaN FETs that are higher performing, smaller, more thermally efficient,…
This article highlights EPC EPC2065 and EPC2054 eGaN FETs that are higher performing, smaller, more thermally efficient, and at a comparable cost.
One popular GaN device type is the Cascode GaN FET, which provides even more difficult challenges with its…
One popular GaN device type is the Cascode GaN FET, which provides even more difficult challenges with its oscillation-prone device behavior. In…
This article highlights Murata MGJ2 DC-DC converters exhibit an ultra-low isolation capacitance of just 3pF (typical).
This article highlights Murata MGJ2 DC-DC converters exhibit an ultra-low isolation capacitance of just 3pF (typical).
Delivering the power of a quarter-brick in the size of an eighth brick, the EPC9149 uses eGaN® FETs switching at 1 MHz…
Delivering the power of a quarter-brick in the size of an eighth brick, the EPC9149 uses eGaN® FETs switching at 1 MHz for extreme power density…
Future Medium Voltage Power Electronics solutions for measurement and control require a new approach that increases…
Future Medium Voltage Power Electronics solutions for measurement and control require a new approach that increases simplicity, reliability and…