Latest Power FETs Articles

This article highlights EPC EPC2065 and EPC2054 eGaN FETs that are higher performing, smaller, more thermally efficient,…

This article highlights EPC EPC2065 and EPC2054 eGaN FETs that are higher performing, smaller, more thermally efficient, and at a comparable cost.

One popular GaN device type is the Cascode GaN FET, which provides even more difficult challenges with its…

One popular GaN device type is the Cascode GaN FET, which provides even more difficult challenges with its oscillation-prone device behavior. In…

This article highlights Murata MGJ2 DC-DC converters exhibit an ultra-low isolation capacitance of just 3pF (typical).

This article highlights Murata MGJ2 DC-DC converters exhibit an ultra-low isolation capacitance of just 3pF (typical).

Delivering the power of a quarter-brick in the size of an eighth brick, the EPC9149 uses eGaN® FETs switching at 1 MHz…

Delivering the power of a quarter-brick in the size of an eighth brick, the EPC9149 uses eGaN® FETs switching at 1 MHz for extreme power density…

Future Medium Voltage Power Electronics solutions for measurement and control require a new approach that increases…

Future Medium Voltage Power Electronics solutions for measurement and control require a new approach that increases simplicity, reliability and…

This article highlights Avnet Silica devices featuring STSiC Power components for SiC information.

This article highlights Avnet Silica devices featuring STSiC Power components for SiC information.

UnitedSiC brings power systems engineers a new, registration-free tool that can help with quick decision-making when…

UnitedSiC brings power systems engineers a new, registration-free tool that can help with quick decision-making when constructing power designs.

This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates…

This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates selection and performance…

This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source…

This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source tabbed, Nexperia GAN063-650W.

For higher security, the R3500 series has a fault-diagnostic function that checks if the IC itself can operate properly,…

For higher security, the R3500 series has a fault-diagnostic function that checks if the IC itself can operate properly, as the new product is…

This article is the first in a series of articles discussing three topics that can help power systems designers achieve…

This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…

This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs…

This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs and Superjunction FETs in…

The new semiconductor is aimed at ultra-thin Point-of-Load Converters, USB-C Battery Chargers and other space-constrained…

The new semiconductor is aimed at ultra-thin Point-of-Load Converters, USB-C Battery Chargers and other space-constrained applications

In high switching frequency applications, the high commutation slopes of the power switches require immunity against high…

In high switching frequency applications, the high commutation slopes of the power switches require immunity against high levels of common mode…

The new units are optimized for isolated and non-isolated buck, flyback, and buck-boost converters

The new units are optimized for isolated and non-isolated buck, flyback, and buck-boost converters

Transphorm’s fifth generation of gallium nitride (GaN) FET outperforms standard Silicon carbide (SiC) solutions in…

Transphorm’s fifth generation of gallium nitride (GaN) FET outperforms standard Silicon carbide (SiC) solutions in power, design flexibility, and…

EPC introduces the 40 V, 3 milliohm EPC2055 eGaN FET, offering designers a device that is smaller, more efficient, and…

EPC introduces the 40 V, 3 milliohm EPC2055 eGaN FET, offering designers a device that is smaller, more efficient, and more reliable than currently…

UnitedSiC’s gen 4 technology enables enhanced figures of merit.

UnitedSiC’s gen 4 technology enables enhanced figures of merit.

The new unit leads the pack with greater reliability and efficiency at a lower cost point and at a smaller size

The new unit leads the pack with greater reliability and efficiency at a lower cost point and at a smaller size