Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the switching converters with very…
Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the switching converters with very…
Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC…
Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC in a compact 22 pin, 5mm…
The new chipset will enable power supply units (PSU) of 100+ watts that are 30-50% smaller than those now available.
The new chipset will enable power supply units (PSU) of 100+ watts that are 30-50% smaller than those now available.
Learn about the principles of and the operation of the field-effect transistor.
Learn about the principles of and the operation of the field-effect transistor.
Power electronics manufacturer Eggtronic recently announced a new AC wireless power hybrid technology.
Power electronics manufacturer Eggtronic recently announced a new AC wireless power hybrid technology.
The demand for high power density converters in EVs requires further integration of sensors within power electronics.
The demand for high power density converters in EVs requires further integration of sensors within power electronics.
Efficient Power Conversion’s (EPC) new enhancement-mode gallium nitride (eGaN) FET is primed for space based applications
Efficient Power Conversion’s (EPC) new enhancement-mode gallium nitride (eGaN) FET is primed for space based applications
This article highlights EPC EPC2065 and EPC2054 eGaN FETs that are higher performing, smaller, more thermally efficient,…
This article highlights EPC EPC2065 and EPC2054 eGaN FETs that are higher performing, smaller, more thermally efficient, and at a comparable cost.
One popular GaN device type is the Cascode GaN FET, which provides even more difficult challenges with its…
One popular GaN device type is the Cascode GaN FET, which provides even more difficult challenges with its oscillation-prone device behavior. In…
This article highlights Murata MGJ2 DC-DC converters exhibit an ultra-low isolation capacitance of just 3pF (typical).
This article highlights Murata MGJ2 DC-DC converters exhibit an ultra-low isolation capacitance of just 3pF (typical).
Delivering the power of a quarter-brick in the size of an eighth brick, the EPC9149 uses eGaN® FETs switching at 1 MHz…
Delivering the power of a quarter-brick in the size of an eighth brick, the EPC9149 uses eGaN® FETs switching at 1 MHz for extreme power density…
Future Medium Voltage Power Electronics solutions for measurement and control require a new approach that increases…
Future Medium Voltage Power Electronics solutions for measurement and control require a new approach that increases simplicity, reliability and…
This article highlights Avnet Silica devices featuring STSiC Power components for SiC information.
This article highlights Avnet Silica devices featuring STSiC Power components for SiC information.
UnitedSiC brings power systems engineers a new, registration-free tool that can help with quick decision-making when…
UnitedSiC brings power systems engineers a new, registration-free tool that can help with quick decision-making when constructing power designs.
This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates…
This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates selection and performance…
This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source…
This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source tabbed, Nexperia GAN063-650W.
For higher security, the R3500 series has a fault-diagnostic function that checks if the IC itself can operate properly,…
For higher security, the R3500 series has a fault-diagnostic function that checks if the IC itself can operate properly, as the new product is…
This article is the first in a series of articles discussing three topics that can help power systems designers achieve…
This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…
This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs…
This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs and Superjunction FETs in…
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