As Bodo Arlt, founder of Bodo's Power Systems, celebrates his 70th birthday, we pay tribute to his accomplishments and impact on the power…
As Bodo Arlt, founder of Bodo's Power Systems, celebrates his 70th birthday, we pay tribute to his accomplishments and impact on the power…
The device from Toshiba offers an exceptionally low on-resistance to help miniaturize power electronics. This article…
The device from Toshiba offers an exceptionally low on-resistance to help miniaturize power electronics. This article will examine the…
Nexperia has launched its first-ever insulated gate bipolar transistor (IGBT) device, expanding its portfolio of power…
Nexperia has launched its first-ever insulated gate bipolar transistor (IGBT) device, expanding its portfolio of power MOSFETs and offering…
Learn how to determine the RC high-pass filter's cut-off frequency and transfer function and plot gain/frequency and…
Learn how to determine the RC high-pass filter's cut-off frequency and transfer function and plot gain/frequency and phase/frequency response…
Electric vehicle (EV) DC fast chargers currently under development have to meet more demanding specifications than…
Electric vehicle (EV) DC fast chargers currently under development have to meet more demanding specifications than today’s installed charger…
When designing power applications with gallium-nitride (GaN) wide-bandgap technology, proper control of the gate-driving…
When designing power applications with gallium-nitride (GaN) wide-bandgap technology, proper control of the gate-driving circuit is essential to…
Onsemi has announced a strategic agreement with Kempower to provide high-voltage EliteSiC MOSFETs and diodes for…
Onsemi has announced a strategic agreement with Kempower to provide high-voltage EliteSiC MOSFETs and diodes for Kempower’s EV fast-charging…
Dr. Peter Wawer brings insights from a distinguished career that has touched three unique major semiconductor…
Dr. Peter Wawer brings insights from a distinguished career that has touched three unique major semiconductor technologies: silicon photovoltaics,…
Diodes Incorporated has expanded its silicon carbide product portfolio with the first-ever 1200 V SiC MOSFET in a TO247-4 package.
Diodes Incorporated has expanded its silicon carbide product portfolio with the first-ever 1200 V SiC MOSFET in a TO247-4 package.
The role of high-voltage discrete power semiconductor devices has become increasingly important in the world of power…
The role of high-voltage discrete power semiconductor devices has become increasingly important in the world of power electronics. Littelfuse…
Demand for SiC products remains strong across multiple industries as Wolfspeed aggressively expands SiC production to…
Demand for SiC products remains strong across multiple industries as Wolfspeed aggressively expands SiC production to multiple facilities.
Alpha & Omega Semiconductor has announced new 650- and 750-volt silicon carbide MOSFETs for solar inverters, motor…
Alpha & Omega Semiconductor has announced new 650- and 750-volt silicon carbide MOSFETs for solar inverters, motor drives, industrial power…
High-Voltage Direct Current technology has seen many technological advancements in the past century. This article…
High-Voltage Direct Current technology has seen many technological advancements in the past century. This article provides an introduction and…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
New technological and market trends are constantly pushing for smaller solutions with higher power capabilities. The…
New technological and market trends are constantly pushing for smaller solutions with higher power capabilities. The advancement of electric…
Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using…
Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using silicon MOSFETs and IGBTs.…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…
While the XHP 2 power module package from Infineon Technologies AG is designed for use in today’s applications, it also…
While the XHP 2 power module package from Infineon Technologies AG is designed for use in today’s applications, it also meets the requirements of…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
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