Dr. Peter Wawer brings insights from a distinguished career that has touched three unique major semiconductor technologies: silicon photovoltaics,…
Dr. Peter Wawer brings insights from a distinguished career that has touched three unique major semiconductor technologies: silicon photovoltaics,…
Diodes Incorporated has expanded its silicon carbide product portfolio with the first-ever 1200 V SiC MOSFET in a TO247-4 package.
Diodes Incorporated has expanded its silicon carbide product portfolio with the first-ever 1200 V SiC MOSFET in a TO247-4 package.
The role of high-voltage discrete power semiconductor devices has become increasingly important in the world of power…
The role of high-voltage discrete power semiconductor devices has become increasingly important in the world of power electronics. Littelfuse…
Demand for SiC products remains strong across multiple industries as Wolfspeed aggressively expands SiC production to…
Demand for SiC products remains strong across multiple industries as Wolfspeed aggressively expands SiC production to multiple facilities.
Alpha & Omega Semiconductor has announced new 650- and 750-volt silicon carbide MOSFETs for solar inverters, motor…
Alpha & Omega Semiconductor has announced new 650- and 750-volt silicon carbide MOSFETs for solar inverters, motor drives, industrial power…
High-Voltage Direct Current technology has seen many technological advancements in the past century. This article…
High-Voltage Direct Current technology has seen many technological advancements in the past century. This article provides an introduction and…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
New technological and market trends are constantly pushing for smaller solutions with higher power capabilities. The…
New technological and market trends are constantly pushing for smaller solutions with higher power capabilities. The advancement of electric…
Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using…
Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using silicon MOSFETs and IGBTs.…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…
While the XHP 2 power module package from Infineon Technologies AG is designed for use in today’s applications, it also…
While the XHP 2 power module package from Infineon Technologies AG is designed for use in today’s applications, it also meets the requirements of…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard…
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended…
The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended range, lower battery…
Fly-back converter ICs maximizing performance, reducing system cost and increasing reliability for industrial and…
Fly-back converter ICs maximizing performance, reducing system cost and increasing reliability for industrial and consumer power supply solutions.
In this article we present the results of analysis of current requirements of traction converters powered by 750 V DC and…
In this article we present the results of analysis of current requirements of traction converters powered by 750 V DC and 1500 V DC. Based on these…
Learn about the applications of WBG based semiconductor devices specifically in automotive applications.
Learn about the applications of WBG based semiconductor devices specifically in automotive applications.
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