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Delivering Higher Short-Circuit Capability for GaN FETs

Delivering Higher Short-Circuit Capability for GaN FETs

Short-circuit capability of power switches is a critical feature for all power systems, particularly those more susceptible to experiencing short…


Moving from IGBT to SiC: PFC Efficiency

Moving from IGBT to SiC: PFC Efficiency

The continuing worldwide efforts to reduce carbon emissions have driven the growth in interest in electric vehicles (EV). As a result, the demand…


ROHM Forms New Joint Venture for SiC Power Devices

ROHM Forms New Joint Venture for SiC Power Devices

Japanese electronic components manufacturer ROHM is forming a new joint venture to head its SiC power module business.


News Nov 09, 2021 by Shannon Cuthrell
Fast Short-Circuit Protection of SiC-MOSFETs through AC Current Sensors

Fast Short-Circuit Protection of SiC-MOSFETs through AC Current Sensors

Constant improvements in power semiconductor technology enable even more efficient and compact power converters. Silicon Carbide CoolSiC™ MOSFETs…


Solid Power Releases Safety and Performance Data for its High-Content Silicon Cell

Solid Power Releases Safety and Performance Data for its High-Content Silicon Cell

Solid Power, a leading developer company of all-solid-state batteries, recently unveiled a report containing its new battery’s performance and…


News Nov 05, 2021 by Ahmad Ezzeddine
Allegro Debuts a 3-Phase Gate Driver IC Purposed to Reduce EV Noise Levels

Allegro Debuts a 3-Phase Gate Driver IC Purposed to Reduce EV Noise Levels

The new unit is aimed at sensorless, brushless DC (BLDC) motors operating over a 5V to 50V voltage range.


Overviewing 4th Generation SiC MOSFETs and Application-level Support Tools

Overviewing 4th Generation SiC MOSFETs and Application-level Support Tools

High performance devices supplemented with system solution support. In 2010, ROHM has introduced its first commercial SiC MOSFET into the power…


CMOS implementation of XOR, XNOR, and TG gates

CMOS implementation of XOR, XNOR, and TG gates

Learn how to implement the logic gates XOR, XNOR, and Transmission Gate (TG) using CMOS.


Sungrow’s String Inverter Employs Infineon Module and Chip Technology

Sungrow’s String Inverter Employs Infineon Module and Chip Technology

The 352kW, 1500 VDC Sungrow device offers a 40% increase in output power when compared to the company’s previous best.


How to Choose the Right Battery-Charger IC for Ultrasound Point-of-Care Products

How to Choose the Right Battery-Charger IC for Ultrasound Point-of-Care Products

In this article, I’ll examine compact battery-charger integrated circuits (ICs) and solutions for ultrasound point-of-care products that are used…


NexWafe Raises Funds for its Low-Cost Green Silicon Wafer Technology

NexWafe Raises Funds for its Low-Cost Green Silicon Wafer Technology

NexWafe receives €39 million in funding to further develop its green solar wafer technology for large-scale production.


News Nov 01, 2021 by Stephanie Leonida
Toshiba Unveils New Simulation Technology Accu-ROM to Reduce Semiconductor Verification Time

Toshiba Unveils New Simulation Technology Accu-ROM to Reduce Semiconductor Verification Time

Toshiba has recently developed a new model-based development (MBD) simulation technology that can reportedly reduce verification times for…


Skoltech and IBM Team Up To Create an Ultra-Efficient Optical Transistor

Skoltech and IBM Team Up To Create an Ultra-Efficient Optical Transistor

A new transistor, using photon manipulation instead of electronic signals, was created by an international research team led by Skoltech and IBM.


News Oct 29, 2021 by Ahmad Ezzeddine
STMicroelectronics (ST) Unveils A New Series of 800V Power MOSFETS

STMicroelectronics (ST) Unveils A New Series of 800V Power MOSFETS

The new super-junction power MOSFETs offer the best available figures of merit for RDS(on) x Area of any 800V device on the market.


EPC’s 40V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions

EPC’s 40V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions

EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…


Ampleon Extends LDMOS Base Station and Multi-Carrier Line with 400W Rugged Doherty RF Power Transistor

Ampleon Extends LDMOS Base Station and Multi-Carrier Line with 400W Rugged Doherty RF Power Transistor

The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base station applications where…


Basic CMOS Logic Gates

Basic CMOS Logic Gates

Learn about gates built with the CMOS digital-logic family.


Allegro Unveils 3-Phase Gate Driver For EV and Hybrid Cars

Allegro Unveils 3-Phase Gate Driver For EV and Hybrid Cars

Allegro MicroSystems's A89307 offers ultra-low noise and vibration by using a Field Oriented Control (FOC) algorithm to drive continuous…


Dynamic ON-Resistance Measurement Techniques for GaN Power Transistors

Dynamic ON-Resistance Measurement Techniques for GaN Power Transistors

Dynamic on-state resistance is critical for the reliable and stable operation of GaN power transistors. However, many engineers are struggling to…


NIST Researchers Develop a New Method to Detect Faulty Transistors on Chips

NIST Researchers Develop a New Method to Detect Faulty Transistors on Chips

NIST Researchers and collaborators developed a new technique to determine faulty semiconductor devices and that can also count the number of…


News Oct 25, 2021 by Darshil Patel