EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…
The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base…
The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base station applications where…
Learn about gates built with the CMOS digital-logic family.
Learn about gates built with the CMOS digital-logic family.
Allegro MicroSystems's A89307 offers ultra-low noise and vibration by using a Field Oriented Control (FOC) algorithm to…
Allegro MicroSystems's A89307 offers ultra-low noise and vibration by using a Field Oriented Control (FOC) algorithm to drive continuous…
Dynamic on-state resistance is critical for the reliable and stable operation of GaN power transistors. However, many…
Dynamic on-state resistance is critical for the reliable and stable operation of GaN power transistors. However, many engineers are struggling to…
NIST Researchers and collaborators developed a new technique to determine faulty semiconductor devices and that can also…
NIST Researchers and collaborators developed a new technique to determine faulty semiconductor devices and that can also count the number of…
Learn about the different types of electrified vehicles and how power electronics play an essential role in their proliferation.
Learn about the different types of electrified vehicles and how power electronics play an essential role in their proliferation.
The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.
The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.
Researchers from the University of Arkansas receive a $17.87 million grant from the National Science Foundation to build…
Researchers from the University of Arkansas receive a $17.87 million grant from the National Science Foundation to build and run a fabrication…
The new series includes 8 dual n-channel devices and 4 units featuring one p-channel and one n-channel MOSFET each.
The new series includes 8 dual n-channel devices and 4 units featuring one p-channel and one n-channel MOSFET each.
AEC-Q100 qualified, high efficiency driver for automotive and high-reliability DC input industrial and medical lighting;…
AEC-Q100 qualified, high efficiency driver for automotive and high-reliability DC input industrial and medical lighting; Hysteretic control…
The new AEC-Q100 qualified device offers high reliability and low drift over an extended temperature range.
The new AEC-Q100 qualified device offers high reliability and low drift over an extended temperature range.
Chip giant Infineon is planning a significant boost to its investments in factory expansions over the next year.
Chip giant Infineon is planning a significant boost to its investments in factory expansions over the next year.
The increase of competitiveness, robustness and efficiency of future railway converters has demanded new power…
The increase of competitiveness, robustness and efficiency of future railway converters has demanded new power semiconductor modules. Converter…
Pre-Switch expands its operations with its new headquarters in San Jose and plans to accelerate the application of its…
Pre-Switch expands its operations with its new headquarters in San Jose and plans to accelerate the application of its AI-based technology to areas…
Engineers created a new battery technology that combines the benefits of solid-state electrolyte and an all-silicon anode.
Engineers created a new battery technology that combines the benefits of solid-state electrolyte and an all-silicon anode.
This article proposes a method to obtain optimal properties of silicon fast IGBT chips designed for joint operation with…
This article proposes a method to obtain optimal properties of silicon fast IGBT chips designed for joint operation with SiC SBD in hybrid modules.…
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
The first series member is a highly integrated half-bridge device aimed at wireless charging applications.
The first series member is a highly integrated half-bridge device aimed at wireless charging applications.
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