Latest Wide Bandgap New Products

The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.

The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.

The two companies agree to joint development of the next generation of their successful Gallium Nitride (GaN) technology.

The two companies agree to joint development of the next generation of their successful Gallium Nitride (GaN) technology.

Both devices include both the gate driver and two enhancement-mode GaN power transistors in a single highly integrated package.

Both devices include both the gate driver and two enhancement-mode GaN power transistors in a single highly integrated package.

This circuit uses a synchronous MOSFET that lets the bootstrap voltage reach the logic supply voltage, VCC, allowing the…

This circuit uses a synchronous MOSFET that lets the bootstrap voltage reach the logic supply voltage, VCC, allowing the driver to operate from a…

For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium…

For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium nitride (GaN) based power…

The new test systems offer power options of up to 270 KW, with capabilities of up to 1.5 MW upon parallelization.

The new test systems offer power options of up to 270 KW, with capabilities of up to 1.5 MW upon parallelization.

EPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than…

EPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than traditional silicon Rad…

A series of AC/DC and DC/AC baseless power converters were developed in cooperation with Europe’s Clean Sky Consortium.

A series of AC/DC and DC/AC baseless power converters were developed in cooperation with Europe’s Clean Sky Consortium.

ST’s MasterGaN concept simplifies migrating from ordinary silicon MOSFETs to GaN wide-bandgap power technology.

ST’s MasterGaN concept simplifies migrating from ordinary silicon MOSFETs to GaN wide-bandgap power technology.

The new devices allow designers to reap the benefits of Gallium Nitride (GaN) technology at a reduced cost per watt.

The new devices allow designers to reap the benefits of Gallium Nitride (GaN) technology at a reduced cost per watt.

The new evaluation board employs onsemi's NCP1680 controller and GaN Systems’ GS66508B 650V Enhancement Mode GaN…

The new evaluation board employs onsemi's NCP1680 controller and GaN Systems’ GS66508B 650V Enhancement Mode GaN Transistor.

The new silicon carbide (SiC) diodes feature higher speed and greater efficiency than last generation silicon diodes.

The new silicon carbide (SiC) diodes feature higher speed and greater efficiency than last generation silicon diodes.

The effort marks ST’s commitment to the high power, high voltage requirements of the automotive and industrial markets.

The effort marks ST’s commitment to the high power, high voltage requirements of the automotive and industrial markets.

Companies Introduce World’s First Bridgeless Totem Pole PFC Evaluation Board.

Companies Introduce World’s First Bridgeless Totem Pole PFC Evaluation Board.

EPC Space is providing Rad Hard GaN power devices to Astranis for use in the latest build of new small geostationary…

EPC Space is providing Rad Hard GaN power devices to Astranis for use in the latest build of new small geostationary communications satellites.

Enhancements to the online power design tool make identifying optimal SiC FET design solutions even easier.

Enhancements to the online power design tool make identifying optimal SiC FET design solutions even easier.

The Starkrimson Streamer Ultra represents a new kind of high-end audio system that offers commanding performance in a…

The Starkrimson Streamer Ultra represents a new kind of high-end audio system that offers commanding performance in a discreet package. It can…

The new devices utilize ROHM’s Schottky SBDs as a freewheeling diode to effect minimal switching power losses

The new devices utilize ROHM’s Schottky SBDs as a freewheeling diode to effect minimal switching power losses

EPC Space introduces a new 60 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion…

EPC Space introduces a new 60 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical…