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Microchip Expands SiC Portfolio with 1700V Solutions

Microchip Expands SiC Portfolio with 1700V Solutions

Today’s energy-efficient electric charging systems powering commercial vehicle propulsion, as well as auxiliary power systems, solar inverters,…


Fraunhofer IAF Establishes a GaN Low Voltage IC Design for 3-Phase Motor Inverters

Fraunhofer IAF Establishes a GaN Low Voltage IC Design for 3-Phase Motor Inverters

The Fraunhofer Institute for Applied Solid State Physics (IAF), explored new research through their latest ideas for integrating GaN-based ICs for…


Tagore Introduces 650V GaN Power IC, Comprising GaN Power FET with Monolithically Integrated Driver

Tagore Introduces 650V GaN Power IC, Comprising GaN Power FET with Monolithically Integrated Driver

Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC in a compact 22 pin, 5mm…


Microchip Debuts a GaN-based Ka-band MMIC for SatCom Terminals

Microchip Debuts a GaN-based Ka-band MMIC for SatCom Terminals

The new monolithic microwave integrated Circuit (MMIC) delivers 10W of saturated RF output power over a 27.5 to 31GHz range


ROHM Debuts a DC/DC Converter IC with a Built-In 1700-Volt SiC MOSFET

ROHM Debuts a DC/DC Converter IC with a Built-In 1700-Volt SiC MOSFET

The surface mounted units are housed in TO 263-7L package and deliver up to 48 watts with no heatsink required


Cree and Gospower Partner to Give Silicon Carbide a Boost

Cree and Gospower Partner to Give Silicon Carbide a Boost

Cree announces its partnership with Gospower which focuses on the development of silicon-carbide-based power supply solutions for boosting…


ROHM Announces AC/DC Converter ICs with a Built-in 1700V SiC MOSFET

ROHM Announces AC/DC Converter ICs with a Built-in 1700V SiC MOSFET

ROHM’s BM2SC12xFP2-LBZ power ICs are the Quasi-resonant (QR) AC/DC converters with an integrated 1700V SiC MOSFET in a single compact…


ROHM’s 150V GaN HEMTs Sport a Rated Gate-Source Voltage of 8 Volts

ROHM’s 150V GaN HEMTs Sport a Rated Gate-Source Voltage of 8 Volts

With competing devices spec’d at 6 volts, ROHM’s devices will offer the designer a critical 2-volt edge.


GeneSiC’s G3R 750V SiC MOSFETs for Solar Inverters and EV Onboard Chargers

GeneSiC’s G3R 750V SiC MOSFETs for Solar Inverters and EV Onboard Chargers

This article highlights GeneSiC Semiconductor 750V G3R™SiC MOSFETs that deliver unprecedented levels of performance, robustness and quality that…


Infineon Releases a SiC Six-Pack Power Module for EV Traction Inverters

Infineon Releases a SiC Six-Pack Power Module for EV Traction Inverters

The HybridPACK Drive CoolSiC is a full-bridge module with a 1200-volt blocking voltage aimed at EV traction inverters


GaN Systems Expands Automotive Product Line

GaN Systems Expands Automotive Product Line

The new transistor was developed for demanding high-power electric vehicle applications such as onboard chargers, traction inverters, and DC-DC…


Transphorm and Silana Partner on GaN Adapter Reference Design

Transphorm and Silana Partner on GaN Adapter Reference Design

The resulting open frame, 65W USB-C PD charger unites Silana’s PWM controller with Transphorm’s SuperGaN FETs


EPC Debuts GaN-Based, Bidirectional 1.5kW Demonstration Board

EPC Debuts GaN-Based, Bidirectional 1.5kW Demonstration Board

This 48/12 VDC solution’s 97% efficiency allows for air cooling, making water cooling unnecessary


Keysight Debuts a GaN Test Board for its PD1500A Testing System

Keysight Debuts a GaN Test Board for its PD1500A Testing System

Advances in GaN operating voltages have made the wide bandgap technology more relevant than ever to EV manufacturers


UnitedSiC Announces Six New D2PAK-7L SiC FETs

UnitedSiC Announces Six New D2PAK-7L SiC FETs

This article highlights United Silicon Carbide FET 650V and 1200V options, all housed in the industry standard D2PAK-7L surface mount package.


GaN Systems Unveils a 3kW LLC Resonant Converter Reference Design

GaN Systems Unveils a 3kW LLC Resonant Converter Reference Design

The full-bridge reference design meets and beats the 80 Plus Titanium standard for switch mode power supplies (SMPS)


STMicroelectronics Unveils its STi2GaN Portfolio

STMicroelectronics Unveils its STi2GaN Portfolio

GaN power stages are combined with intelligence to create highly efficient, space saving solutions


CISSOID Expands its SiC Intelligent Power Modules Platform

CISSOID Expands its SiC Intelligent Power Modules Platform

The liquid-cooled modules are ideal for E-Mobility applications and meet the demand for natural cooling in aerospace.


EPC Launches Scalable 1.5 kW 48 V/12 V DC-DC Demonstration Board Powered by GaN FETs

EPC Launches Scalable 1.5 kW 48 V/12 V DC-DC Demonstration Board Powered by GaN FETs

The design of this demonstration board is scalable; that is, two converters can be paralleled to achieve 3 kW or three converters can be paralleled…


Nexperia’s 650V GaN FETs Sport RDS(ON)s of 33 Milliohms

Nexperia’s 650V GaN FETs Sport RDS(ON)s of 33 Milliohms

The new devices will enable power supplies functioning at 2 kW and higher to satisfy the 80 PLUS Titanium standard