GaN Systems Debuts Two Low-cost E-Mode GaN Power Transistors
The new devices allow designers to reap the benefits of Gallium Nitride (GaN) technology at a reduced cost per watt.
The GS-065-011-2-L and the GS-065-030-2-L are low cost, 650 volt devices, with the GS-065-011-2-L aimed at 45 to 150 watt applications and the GS-065-030-2-L purposed for 3,000 watt use cases.
The GS-065-011-2-L and the GS-065-030-2-L. Image courtesy of GaN Systems
GaN Systems’ Aims for the New E-mode GaN Power Transistors
As described by Jim Witham, CEO of GaN Systems, "GaN has made its mark in power electronics – in size, weight, efficiency, cost, and performance – and we are proud of the advancements we have made with every new generation of products so that customers can maximize the benefits of GaN. With these new GS-065-011-2-L and GS-065-030-2-L products, our customers can leverage the benefits that come from smaller, more efficient, and more cost-effective power electronics.”
The GS-065-011-2-L is a 650 V, 11 A transistor with an RDS(ON) of 150 mΩ aimed at consumer electronics applications such as higher power chargers and adapters. The GS-065-030-2-L is a 650 V, 30A device featuring an RDS(ON) of 50 mΩ. It is targeted for data center and 5G applications as well as for energy storage systems, bridgeless totem pole power factor correction (PFC) applications, SMPS and motor drives.
Similarities
The new units are E-mode GaN on Silicon, bottom-side cooled devices. They feature low junction-to-case thermal resistance, switching frequencies of over 1 MHz and zero reverse recovery losses. Gate drive voltage are -10V to +7V, with tolerance for -20 to +10 V. They both feature zero reverse recovery losses and they offer source sense (SS) pins for optimized gate drive.
Electrical Specifications
| GS-065-011-2-L | GS-065-030-2-L | |
| Drain to source voltage | 650 volts | 650 volts |
| Maximum continuous drain to source current | 11 amps | 30 amps |
| Pulse drain current | 19 amps | 60 amps |
| Thermal Resistance (junction-to-case) for the bottom side | 1.4 °C /W | 0.5 °C /W |
| Thermal Resistance (junction-to-ambient) | 36 °C /W | 35 °C /W |
| Gate-to source threshold (typ) | 1.7 volts | 1.7 volts |
| Gate-to source current (typ) | 57 µA | 182 µA |
| Input capacitance (typ) | 70 pF | 235 pF |
| Output capacitance (typ) | 20 pF | 60 pF |
| Gate to source charge (typ) | 0.7 nC | 1.9 nC |
| Gate to drain charge (typ) | 0.7 nC | 2 nC |
| Output charge (typ) | 19 nC | 61 nC |
| Reverse recovery charge (typ) | 0 nC | 0 nC |
|
Output capacitance stored energy (typ) |
2.4 µJ | 8 µJ |
The specifications in the table above are for 25℃.
Complete information can be found at the GS-065-011-2-L datasheet and the GS-065-011-2-L datasheet.
Physical
The new devices are:
- Bottom cooled and are available in 8 × 8 x 0.9 mm PDFN packages
- RoHS 3 (6+4) compliant
- Operate over a -55 to +150℃ temperature range
Getting to Market Faster
GaN Systems offers the GS-EVB-LLC-3KW-GS, a reference design and evaluation board for a 3KW LLC resonant converter based on the GS-065-030-2-L.
The GS-EVB-LLC-3KW-GS Evaluation Board and reference Design. Image courtesy of GaN Systems
The full-bridge DC-DC converter exceeds the 80+ Titanium standard and achieves a power density (PFC+DC/DC) of over 100W/inch3 and better than 96% efficiency.
