SemiQ’s high-performance silicon carbide power modules are rated to 1200 V and offer high efficiency and power density for energy storage, EV…
SemiQ’s high-performance silicon carbide power modules are rated to 1200 V and offer high efficiency and power density for energy storage, EV…
By adding models for its silicon carbide and IGBT devices, ROHM has expanded its library of LTspice models to more than…
By adding models for its silicon carbide and IGBT devices, ROHM has expanded its library of LTspice models to more than 3,500, expanding circuit…
The company is expanding its presence in the wide bandgap semiconductor market with advancements in its FET and MOSFET…
The company is expanding its presence in the wide bandgap semiconductor market with advancements in its FET and MOSFET product lines.
High-voltage devices from Power Integrations and Magnachip Semiconductor use the latest gallium nitride and silicon power…
High-voltage devices from Power Integrations and Magnachip Semiconductor use the latest gallium nitride and silicon power technologies and advanced…
STMicroelectronics is releasing its latest silicon carbide power module for EVs and other high-voltage applications,…
STMicroelectronics is releasing its latest silicon carbide power module for EVs and other high-voltage applications, while onsemi completes the…
Nexperia and Kyocera AVX will work together on developing high-voltage (650 V) rectifier modules for industrial power…
Nexperia and Kyocera AVX will work together on developing high-voltage (650 V) rectifier modules for industrial power supplies, EV charging…
Bourns is adding ten new silicon carbide (SiC) Schottky barrier diode (SBD) models to its product family to address…
Bourns is adding ten new silicon carbide (SiC) Schottky barrier diode (SBD) models to its product family to address increasing power density…
Wide bandgap products from ROHM, STMicroelectronics, and Toshiba leverage the capabilities of silicon carbide and gallium…
Wide bandgap products from ROHM, STMicroelectronics, and Toshiba leverage the capabilities of silicon carbide and gallium nitride to meet key…
Semiconductor manufacturer announces new TO leadless packaging option for its 650 V CoolSiC MOSFET family along with…
Semiconductor manufacturer announces new TO leadless packaging option for its 650 V CoolSiC MOSFET family along with model extensions and…
Nexperia has launched its first-ever insulated gate bipolar transistor (IGBT) device, expanding its portfolio of power…
Nexperia has launched its first-ever insulated gate bipolar transistor (IGBT) device, expanding its portfolio of power MOSFETs and offering…
The products from Diodes hope to elevate efficiency levels in automotive applications. This article examines silicon…
The products from Diodes hope to elevate efficiency levels in automotive applications. This article examines silicon carbide, its role in…
Transphorm has released the Verilog model and datasheet for its first-ever 1200 V GaN-on-Sapphire power transistor.
Transphorm has released the Verilog model and datasheet for its first-ever 1200 V GaN-on-Sapphire power transistor.
Advancing power electronics is one of the keys to increasing EV and power system efficiencies while reducing costs.
Advancing power electronics is one of the keys to increasing EV and power system efficiencies while reducing costs.
The company has built a modular line for use in EV chargers, bi-directional microgrids, and a variety of high-power applications.
The company has built a modular line for use in EV chargers, bi-directional microgrids, and a variety of high-power applications.
Diodes Incorporated has expanded its silicon carbide product portfolio with the first-ever 1200 V SiC MOSFET in a TO247-4 package.
Diodes Incorporated has expanded its silicon carbide product portfolio with the first-ever 1200 V SiC MOSFET in a TO247-4 package.
Navitas Semiconductor and Katek Group have announced that Katek’s coolcept fleX family of Steca solar inverters will…
Navitas Semiconductor and Katek Group have announced that Katek’s coolcept fleX family of Steca solar inverters will use GeneSiC power…
Alpha & Omega Semiconductor has announced new 650- and 750-volt silicon carbide MOSFETs for solar inverters, motor…
Alpha & Omega Semiconductor has announced new 650- and 750-volt silicon carbide MOSFETs for solar inverters, motor drives, industrial power…
Efficient Power Conversion’s new EPC2302 eGaN IC switches at 1 MHz and boasts a withstand voltage of up to 100 V.
Efficient Power Conversion’s new EPC2302 eGaN IC switches at 1 MHz and boasts a withstand voltage of up to 100 V.
Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon…
Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon carbide (SiC) are now…
The industrial and consumer market is requiring increased power density for DC/DC converters that have high step-down…
The industrial and consumer market is requiring increased power density for DC/DC converters that have high step-down ratios and use high…
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