This year’s four-day Electronica trade show will be presented online, featuring over 200 international exhibitors, topical forums, interactive…
This year’s four-day Electronica trade show will be presented online, featuring over 200 international exhibitors, topical forums, interactive…
The new 1200 and 1700 volt Junction Barrier Schottky (JBS) diodes join the company’s 3rd generation of silicon carbide…
The new 1200 and 1700 volt Junction Barrier Schottky (JBS) diodes join the company’s 3rd generation of silicon carbide MPS diodes.
Because one size doesn’t fit all, Application Specific FETs (ASFETs) allow designers to more easily focus on the specs…
Because one size doesn’t fit all, Application Specific FETs (ASFETs) allow designers to more easily focus on the specs most relevant to the task…
This article highlights Infineon Technology OptiMOS™ 40 V low-voltage power MOSFET to the market.
This article highlights Infineon Technology OptiMOS™ 40 V low-voltage power MOSFET to the market.
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for…
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for fast switching, wide…
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
New Si823Hx/825xx isolated gate drivers cut latency by 50% and increase transient immunity.
New Si823Hx/825xx isolated gate drivers cut latency by 50% and increase transient immunity.
This article highlights EPC's EPC9148 and EPC9153 demonstration boards for 48 V DC-DC conversion.
This article highlights EPC's EPC9148 and EPC9153 demonstration boards for 48 V DC-DC conversion.
Tesla’s new 4680 battery solution offers a tabless electrode to improve thermal management and deliver 6x the amount of…
Tesla’s new 4680 battery solution offers a tabless electrode to improve thermal management and deliver 6x the amount of power while decreasing…
This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including…
This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including AEC-Q101 qualification and…
This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC…
This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC modules utilizing this…
The DMT47M2LDVQ can replace two discrete MOSFETs to reduce the board space footprint in many automotive applications,…
The DMT47M2LDVQ can replace two discrete MOSFETs to reduce the board space footprint in many automotive applications, from electric seat control…
Toshiba Electronics Europe GmbH has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications.
Toshiba Electronics Europe GmbH has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications.
Maxim Integrated introduces MAX25430 that slashes design size up to 40 percent and eliminates microcontrollers, metal…
Maxim Integrated introduces MAX25430 that slashes design size up to 40 percent and eliminates microcontrollers, metal enclosures and heat sinks for…
The MasterGaN combination will simplify designing chargers and power adapters for applications of up to 400W
The MasterGaN combination will simplify designing chargers and power adapters for applications of up to 400W
Fugi has added two 50 watt and two 75 watt devices to it’s 7th-Generation X-Series Portfolio.
Fugi has added two 50 watt and two 75 watt devices to it’s 7th-Generation X-Series Portfolio.
The new enhancement-mode Gallium Nitride (eGaN) devices are aimed at critical applications in defense and aerospace
The new enhancement-mode Gallium Nitride (eGaN) devices are aimed at critical applications in defense and aerospace
This new generation of 100 V eGaN FETs are aimed at applications in lidar, infotainment, class D audio and 48-VOUT…
This new generation of 100 V eGaN FETs are aimed at applications in lidar, infotainment, class D audio and 48-VOUT synchronous rectification
Infineon Technologies 650 V CoolMOS™ CFD7 product family for SMPS designs in industrial applications recent…
Infineon Technologies 650 V CoolMOS™ CFD7 product family for SMPS designs in industrial applications recent technology trends include the need…
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