EPC’s New eGaN FET is Aimed at 48V Synchronous Rectification Applications

The EPC2059 sports a maximum continuous drain to source voltage 170 V and a typical R_DS(ON) of 6.8 mΩ. 

 

Image courtesy of EPC

 

The new device is the latest member of EPC’s family of enhanced mode gallium nitride on silicon (eGAN) of 100 V – 200 V solutions available for a wide range of price points and power levels. These silicon MOSFET killers are designed primarily to meet the demands of 48 to 56-volt data center and server products. They will also find applications in LED lighting, gaming PCs, and with TVs.

EPC has been very active in this field, and this publication has recently highlighted the company’s EPC2215 and EPC2207, its EPC2218 and EPC2204, and its radiation-hardened devices.

The EPC2059 itself is aimed at DC-DC secondary-side synchronous rectification, particularly for applications with power ranges between 100 watts and 6 kW seeking 80 Plus Titanium power supply certification.

 

Silicon MOSFET Killers

According to Alex Lidow, EPC’s co-founder and CEO, “There are very significant performance advantages gained from using GaN in the secondary-side synchronous rectification socket of AC/DC adaptors. In a 400 V to 48 V conversion, switching at 1 MHz, GaN has shown to have one-sixth of the losses and run 10 degrees cooler than a silicon MOSFET with an equivalent resistance.  This enables designers to meet the latest stringent energy efficiency standards for high-end computing, where growth is exploding for multiple applications, such as artificial intelligence (AI), cloud computing, and high-end gaming systems.” 

 

Device Characteristics

As a gallium nitride device, the EPC2059 features a very low typical QG (total gate charge) of 5.7 nC and zero Source-Drain Recovery Charge (Q_RR).

 

Absolute Maximums

• Continuous drain-to-source voltage is 170 volts
• The continuous drain current is 24 amps 
• Pulsed (300µs) drain current is 102 amp 
• Maximum R_DS(ON) is 9mΩ
• Drain to source leakage is 0.1 mA

 

Thermal resistances

• Junction to case (R_θJC): 0.9 °C/W (typical)
• Junction to board (R_θJB): 3 °C/W (typical)
• Junction to ambient (R_θJA): 63 °C/W (typical)

 

Dynamic characteristics

• Input capacitance (C_ISS): 633 pF (typical)
• Reverse Transfer Capacitance (C_RSS): 1.6 pF (typical)
• Output capacitance (C_OSS): 267 pF (typical)

 

Complete listings for all parameters will be found at the EPC2059 datasheet

 

Getting to Market Faster

The EPC9098 is a 170 volt, 17 amp half-bridge development board designed to help engineers to more quickly evaluate the EPC2059.

 

The EPC9098. Image courtesy of EPC

 

The 2 by 2-inch development board can also be employed to build a product prototype.

 

Applications

• Class-D Audio
• Lidar
• Brushless DC Motor Drives
• USB-C PD Quick Chargers and Adaptors
• DC-DC Converters
• Sync rectification for both DC/DC and AC/DC

 

Physical Considerations

The EPC2059 is available in a passivated die form with solder bars. The die size is 2.8 by 1.4 mm.

 

Image courtesy of EPC2059 datasheet

 

The unit operates over a junction temperature range of -40 to 150℃

 

Environmental Concerns

The EPC2059 is: 

• Lead-free
• Halogen-free
• RoHS compliant