EPC’s New eGaN FET is Aimed at 48V Synchronous Rectification Applications
The new unit leads the pack with greater reliability and efficiency at a lower cost point and at a smaller size
The EPC2059 sports a maximum continuous drain to source voltage 170 V and a typical RDS(ON) of 6.8 mΩ.
Image courtesy of EPC
The new device is the latest member of EPC’s family of enhanced mode gallium nitride on silicon (eGAN) of 100 V – 200 V solutions available for a wide range of price points and power levels. These silicon MOSFET killers are designed primarily to meet the demands of 48 to 56-volt data center and server products. They will also find applications in LED lighting, gaming PCs, and with TVs.
The EPC2059 itself is aimed at DC-DC secondary-side synchronous rectification, particularly for applications with power ranges between 100 watts and 6 kW seeking 80 Plus Titanium power supply certification.
Silicon MOSFET Killers
According to Alex Lidow, EPC’s co-founder and CEO, “There are very significant performance advantages gained from using GaN in the secondary-side synchronous rectification socket of AC/DC adaptors. In a 400 V to 48 V conversion, switching at 1 MHz, GaN has shown to have one-sixth of the losses and run 10 degrees cooler than a silicon MOSFET with an equivalent resistance. This enables designers to meet the latest stringent energy efficiency standards for high-end computing, where growth is exploding for multiple applications, such as artificial intelligence (AI), cloud computing, and high-end gaming systems.”
As a gallium nitride device, the EPC2059 features a very low typical QG (total gate charge) of 5.7 nC and zero Source-Drain Recovery Charge (QRR).
- Continuous drain-to-source voltage is 170 volts
- The continuous drain current is 24 amps
- Pulsed (300µs) drain current is 102 amp
- Maximum RDS(ON) is 9mΩ
- Drain to source leakage is 0.1 mA
- Junction to case (RθJC): 0.9 °C/W (typical)
- Junction to board (RθJB): 3 °C/W (typical)
- Junction to ambient (RθJA): 63 °C/W (typical)
- Input capacitance (CISS): 633 pF (typical)
- Reverse Transfer Capacitance (CRSS): 1.6 pF (typical)
- Output capacitance (COSS): 267 pF (typical)
Complete listings for all parameters will be found at the EPC2059 datasheet
Getting to Market Faster
The EPC9098 is a 170 volt, 17 amp half-bridge development board designed to help engineers to more quickly evaluate the EPC2059.
The EPC9098. Image courtesy of EPC
The 2 by 2-inch development board can also be employed to build a product prototype.
- Class-D Audio
- Brushless DC Motor Drives
- USB-C PD Quick Chargers and Adaptors
- DC-DC Converters
- Sync rectification for both DC/DC and AC/DC
The EPC2059 is available in a passivated die form with solder bars. The die size is 2.8 by 1.4 mm.
Image courtesy of EPC2059 datasheet
The unit operates over a junction temperature range of -40 to 150℃
The EPC2059 is:
- RoHS compliant