Vishay Unveils 60V MOSFET in a PowerPAK SO-8L Dual Asymmetric Package

Vishay’s SQJ264EP combines two TrenchFET power MOSFETs in a space saving package. The new device is aimed at automotive DC/DC switch-mode power supplies (SMPS), an arena in which conserving space and high efficiency are must-have attributes.

 

Image courtesy of SQJ264EP data sheet

 

The SQJ264EP combines a high and low side MOSFET in a compact 5 mm by 6 mm footprint. By co-packaging the two TrenchFET MOSFETs in a single asymmetric package, the new device reduces component counts and board space requirements, The result is a far greater power density than would be possible with a single MOSFET solution. 

The device consists of two separate MOSFETs, dubbed the N-Channel 1 MOSFET and the N-Channel 2 MOSFET. Note in the picture above the size discrepancies between D1 and the larger D2; these are the drains of the independent MOSFETs. This corresponds to the maximum drain current (at 25 ℃) of 20 amps for the N-Channel 1 MOSFET, and a larger 54 amp maximum for the N-Channel 2 MOSFET.

This arrangement makes possible the unit’s overall advantage in efficiency when compared to symmetrical dual devices in power conversions with duty cycles below 50%.

 

Standout Characteristics of the SQJ264EP

The dual device’s Channel 1 MOSFET features maximum on-resistance (RDS(ON)) of 20 mΩ at 10 volts and a typical gate charge of 9.2 nC. The Channel 2 MOSFET provides on-resistance of 8.6 mΩ at 10 volts and a typical gate charge of 19.2 nC. 

 

The SQJ264EP features two wholly independent MOSFETs. Image courtesy of SQJ264EP data sheet

 

Because there is no internally connected switch node, the device allows engineers the ability to configure the transistors to different topologies, such as synchronous boost or synchronous buck DC/DC converters.

 

Absolute Maximums

Current and Power

Continuous drain current decreases to 15 and 31 amps for N-Chanel 1 and N Channel 2 at 125℃.

Pulsed drain current, at a pulse width of 300 μs and a duty cycle of 2% are, for N-Chanel 1 and N Channel 2 respectively, rated at 65 and 90 watts.

Maximum power dissipations at 25℃  are 27 and 48 watts. The figures decrease to 9 and 16 watts at 125℃.

 

Thermal Resistance

Junction to ambient (RthJA): 85°C/W for both channels

Junction-to-case (RthJC): 5.5°C/W for N-Chanel 1 and 3.1°C/W for N Channel 2

 

Increased Reliability and Easier Manufacturability

The SQJ264EP’s gullwing leads allow for improved solder flow between pins and the underlying PCB. This also allows for better visibility, facilitating automatic optical inspection (AOI) capabilities.

The improved solder bond that connects the SQJ264EP to the board leads to better overall reliability, when compared to solutions based on QFN single and dual packages.

 

Applications

The new dual MOSFET provides the Reliability and toughness necessary for

• Automotive infotainment systems
• Vehicle displays
• LED lighting
• E-bikes

 

Physical and Environmental Considerations

The SQJ264EP is specified to operate over a junction temperature range of -55 to +175 ℃.

The unit is:

• Rg tested
• RoHS compliant
• Halogen Free