Latest Semiconductors New Products

The new devices utilize ROHM’s Schottky SBDs as a freewheeling diode to effect minimal switching power losses

The new devices utilize ROHM’s Schottky SBDs as a freewheeling diode to effect minimal switching power losses

EPC Space introduces a new 60 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion…

EPC Space introduces a new 60 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical…

The unit features thermal battery protection and automatic selection of three charging modes: automatic trickle charge,…

The unit features thermal battery protection and automatic selection of three charging modes: automatic trickle charge, constant current, and…

Today’s energy-efficient electric charging systems powering commercial vehicle propulsion, as well as auxiliary power…

Today’s energy-efficient electric charging systems powering commercial vehicle propulsion, as well as auxiliary power systems, solar inverters,…

The Fraunhofer Institute for Applied Solid State Physics (IAF), explored new research through their latest ideas for…

The Fraunhofer Institute for Applied Solid State Physics (IAF), explored new research through their latest ideas for integrating GaN-based ICs for…

Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC…

Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC in a compact 22 pin, 5mm…

Micro SMA packaged, 25ns, max. reverse recovery time diodes are AEC-Q101 qualified; 1A- and 2A-rated parts feature low…

Micro SMA packaged, 25ns, max. reverse recovery time diodes are AEC-Q101 qualified; 1A- and 2A-rated parts feature low reverse leakage, low reverse…

The new chipset will enable power supply units (PSU) of 100+ watts that are 30-50% smaller than those now available.

The new chipset will enable power supply units (PSU) of 100+ watts that are 30-50% smaller than those now available.

The new monolithic microwave integrated Circuit (MMIC) delivers 10W of saturated RF output power over a 27.5 to 31GHz range

The new monolithic microwave integrated Circuit (MMIC) delivers 10W of saturated RF output power over a 27.5 to 31GHz range

Both N-Channel devices feature a source-drain recovery charge (QRR) of zero and a very low total gate charge (QG).

Both N-Channel devices feature a source-drain recovery charge (QRR) of zero and a very low total gate charge (QG).

The surface mounted units are housed in TO 263-7L package and deliver up to 48 watts with no heatsink required

The surface mounted units are housed in TO 263-7L package and deliver up to 48 watts with no heatsink required

The new single-channel, bidirectional Transient Voltage Suppressors (TVS) provide ESD protection for USB Type-C applications

The new single-channel, bidirectional Transient Voltage Suppressors (TVS) provide ESD protection for USB Type-C applications

Cree announces its partnership with Gospower which focuses on the development of silicon-carbide-based power supply…

Cree announces its partnership with Gospower which focuses on the development of silicon-carbide-based power supply solutions for boosting…

Efficient Power Conversion’s (EPC) new enhancement-mode gallium nitride (eGaN) FET is primed for space based applications

Efficient Power Conversion’s (EPC) new enhancement-mode gallium nitride (eGaN) FET is primed for space based applications

The tiny buck converters, aimed at USB-PD applications, operate over 7 to 27 VDC inputs and supply 3.3 to 21 VDC

The tiny buck converters, aimed at USB-PD applications, operate over 7 to 27 VDC inputs and supply 3.3 to 21 VDC

The new 250-volt device, with an RDS(ON) of 0.21Ω, offers enhanced power circuit reliability for space and military applications.

The new 250-volt device, with an RDS(ON) of 0.21Ω, offers enhanced power circuit reliability for space and military applications.

The new device combines the converter, the inverter and power factor correction (PFC) functionality in a single module

The new device combines the converter, the inverter and power factor correction (PFC) functionality in a single module

The 1/8th brick sized demonstration board uses eGaN FETs switching at 1 MHz to deliver its best in class power density

The 1/8th brick sized demonstration board uses eGaN FETs switching at 1 MHz to deliver its best in class power density