Tagore Introduces 650V GaN Power IC, Comprising GaN Power FET with Monolithically Integrated Driver
Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC in a compact 22 pin, 5mm x 7mm QFN package.
The new device offers low RDS(ON) of 180mOhm and fast switching to deliver a highly efficient, low-cost power solution in a small footprint for a variety of applications requiring high power density including USB-PD charger, server, and telecom AC-DC power supplies, power factor correction (PFC) converter.
The TP44200NM Power IC has 650V E-mode GaN Power FET, driver, UVLO, and high dv/dt immunity with and without supply - all monolithically integrated on GaN-on-Si substrate. The device has low propagation delay for high-frequency applications and slew rate control through an external resistor.
| Part Number | RDSON | BV | IDS | TProp_Delay | Vcc | PWM | Package |
| TP44200NM | 180mOhm | 650 V | 7.5 A | 20ns | 7.5V | 6V | 5mm x 7mm QFN |
For a full datasheet and samples contact [email protected]
About Tagore Technology
Tagore Technology was founded in January 2011 to pioneer Gallium Nitride-on-Silicon (GaN-on-Si) semiconductor technology for Radio Frequency (RF) and power management applications. We are a fabless semiconductor company with design centers in Arlington Heights, Illinois, USA, and Kolkata, India. Our R&D team is dedicated to developing disruptive solutions leveraging wide-bandgap technologies that help address RF and power design challenges for our customers and accelerate time-to-market for a wide range of applications. For more information visit www.tagoretech.com
