Latest Power FETs New Products

The new power product lineup includes a 1200 V IGBT and a next-gen MOSFET for solar and smartphones, respectively.

The new power product lineup includes a 1200 V IGBT and a next-gen MOSFET for solar and smartphones, respectively.

Infineon, Toshiba, Nexperia, and Navitas have released FETs offering higher integration levels, smaller form factors, …

Infineon, Toshiba, Nexperia, and Navitas have released FETs offering higher integration levels, smaller form factors,  and more power density.

With an eye on efficiency, thermal resistance, and size, major power players have added new MOSFETs to their portfolios.

With an eye on efficiency, thermal resistance, and size, major power players have added new MOSFETs to their portfolios.

These e-fuse offerings from Toshiba, Nexperia, and STMicroelectronics serve manifold applications: laptops, vehicles,…

These e-fuse offerings from Toshiba, Nexperia, and STMicroelectronics serve manifold applications: laptops, vehicles, data centers, and beyond.

The ready-to-use circular board reference design puts 750 W drive capability into a circular PCB just 50 mm (1.9”) in diameter.

The ready-to-use circular board reference design puts 750 W drive capability into a circular PCB just 50 mm (1.9”) in diameter.

To meet the mounting power demands in data centers and AI servers, Infineon has revealed MOSFETs that improve efficiency…

To meet the mounting power demands in data centers and AI servers, Infineon has revealed MOSFETs that improve efficiency at lower voltages.

The latest SiC and GaN devices offer superior performance for various applications, paving the way for the next wave of…

The latest SiC and GaN devices offer superior performance for various applications, paving the way for the next wave of technological advancements.

Qorvo's 4 mΩ SiC JFET for solid-state circuit breakers provides significant advantages over traditional mechanical…

Qorvo's 4 mΩ SiC JFET for solid-state circuit breakers provides significant advantages over traditional mechanical breakers. Andy Wilson…

The MSC200LHI features 5 kV high isolation voltage required in high-speed gate driver circuits.

The MSC200LHI features 5 kV high isolation voltage required in high-speed gate driver circuits.

Infineon’s state-of-the-art MOSFETs set new industry standards by offering high performance, increased power density,…

Infineon’s state-of-the-art MOSFETs set new industry standards by offering high performance, increased power density, and enhanced efficiency.

Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the…

Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the solution size for 48 V and…

The five parts are 1,200-V, full-bridge quad MOSFETs with current ratings from 27–102 A and RDS(on) values ranging from…

The five parts are 1,200-V, full-bridge quad MOSFETs with current ratings from 27–102 A and RDS(on) values ranging from 20 to 80 mΩ.

The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster,…

The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster, more compact, and more…

Infineon’s family of solid-state isolators features a coreless transformer capable of delivering faster and more…

Infineon’s family of solid-state isolators features a coreless transformer capable of delivering faster and more reliable switching and…

The company is demonstrating the new GaN power stages and DC-DC modules at APEC.

The company is demonstrating the new GaN power stages and DC-DC modules at APEC.

The XPH8R316MC and XPH13016MC power MOSFETs exhibit improved on-state resistance compared to previous generations.

The XPH8R316MC and XPH13016MC power MOSFETs exhibit improved on-state resistance compared to previous generations.

AOS’ DFN 5x6 double-sided cooling package promises to overcome the challenge of cooling power MOSFETs in power electronics.

AOS’ DFN 5x6 double-sided cooling package promises to overcome the challenge of cooling power MOSFETs in power electronics.

Reference designs from Power Integrations explore the capabilities of the LinkSwitch-XT2SR family of switching supply…

Reference designs from Power Integrations explore the capabilities of the LinkSwitch-XT2SR family of switching supply controllers in smart meters…

The FETs use Transphorm’s GaN-on-Silicon substrate technology.

The FETs use Transphorm’s GaN-on-Silicon substrate technology.